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US 2017/0304877 A1Published application
Temperature controlled remote plasma clean for exhaust deposit removal
AssigneeApplied Materials, Inc.
InventorsMartin A. HILKENE, David K. CARLSON, Matthew D. SCOTNEY-CASTLE
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Abstract
Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.
Claims20
A processing system, comprising:
- a process chamber;
- and
- an exhaust system coupled to the process chamber, the exhaust system comprising:
- a remote plasma source for supplying an ionized cleaning gas to the exhaust system downstream of the process chamber;
- and
- one or more sensors for measuring the temperature of the exhaust system at one or more locations of the exhaust system.
3 more elements
A processing system, comprising:
- a process chamber;
- and
- an exhaust system coupled to the process chamber, the exhaust system comprising:
- a remote plasma source for supplying an ionized cleaning gas to the exhaust system downstream of the process chamber;
- one or more sensors downstream of the remote plasma source for measuring the temperature of the exhaust system at one or more locations of the exhaust system;
- and
- an endpoint detection system downstream of the one or more sensors;
- and
- a vacuum pump downstream of the endpoint detection system.
6 more elements
A process for cleaning an exhaust system, comprising:
- introducing one or more ionized gases to the exhaust system downstream of a process chamber;
- monitoring the temperature within the exhaust system;
- and
- adjusting the flow rate of the one or more ionized gases based on the monitored temperature.
1 more element
Dependencies are inferred from the claim text.