Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

A method for driving a solid-state imaging device having a pixel portion in which pixels are arranged, wherein

• each pixel includes
• a photo-electric conversion element which accumulates a charge generated by photo-electric conversion in an accumulation period,
• a transfer element capable of transferring the charge accumulated in the photo-electric conversion element in a transfer period,
• a floating diffusion to which the charges accumulated in the photo-electric conversion element is transferred through the transfer element,
• a source-follower element which converts the charge of the floating diffusion to a voltage signal by a gain in accordance with the charge quantity, and
• a capacity changing portion capable of changing the capacity of the floating diffusion in accordance with a capacity changing signal,
• comprising changing the capacity of the floating diffusion by the capacity changing portion in the predetermined period in one readout period with respect to the accumulation period and switching a conversion gain in the one readout period,
• the method for driving a solid-state imaging device comprising
• forming the capacity changing portion by a MOS structure capacitor connected to the floating diffusion, and
• changing gate voltage of the MOS structure capacitor by the capacity changing signal to change the capacity of the floating diffusion and switch the conversion gain of the floating diffusion.

An electronic apparatus comprising

• a solid-state imaging device which includes a pixel portion in which pixels are arranged and
• an optical system which forms an object image at the solid-state imaging device, wherein each pixel of the solid-state imaging device includes ,
• a photo-electric conversion element which accumulates a charge generated by photo-electric conversion in an accumulation period,
• a transfer element capable of transferring the charge accumulated in the photo-electric conversion element in a transfer period,
• a floating diffusion to which the charge accumulated in the photo-electric conversion element is transferred through the transfer element,
• a source-follower element which converts the charge of the floating diffusion to a voltage signal by a gain in accordance with the charge quantity, and
• a capacity changing portion capable of changing the capacity of the floating diffusion in accordance with a capacity changing signal, wherein
• the capacity of the floating diffusion is changed by the capacity changing portion in a predetermined period in one readout period with respect to the accumulation period and a conversion gain is switched in the one readout period, and wherein
• the capacity changing portion includes a MOS structure capacitor connected to the floating diffusion,
• the MOS structure capacitor is changed in gate voltage by the capacity changing signal to change the capacity of the floating diffusion and switch the conversion gain of the floating diffusion.