Polishing pad-measuring apparatus and chemical mechanical polishing facility using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwangsung LEE, Ki-Roo Shin, Kwangchun Kim, Yeonjun Lim, Junghun Cho, Sangkyeong Han
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Abstract
Example embodiments of the inventive concepts provide a polishing pad-measuring apparatus and a chemical mechanical polishing facility using the same. The polishing pad-measuring apparatus includes a foreign material-removing part for removing a foreign material disposed in grooves extending from one surface of a polishing pad toward another surface, opposite to the one surface, of the polishing pad, and a distance measuring part for measuring depths of the grooves from which the foreign material is removed.
Claims20
A polishing pad-measuring apparatus configured to measure a profile of a polishing pad polishing a wafer, the polishing pad-measuring apparatus comprising:
- a foreign material-removing part configured to remove a foreign material disposed in a plurality of grooves, the grooves extending from a first surface of the polishing pad toward a second surface, opposite to the first surface, of the polishing pad;
- and
- a distance measuring part configured to measure depths of the grooves from which the foreign material-removing part has removed the foreign material.
A chemical mechanical polishing facility comprising:
- a polishing station including a plurality of platens and polishing pads respectively disposed on the platens;
- a rotatable polishing head assembly disposed on the polishing station, the polishing head assembly including a plurality of polishing heads, the plurality of polishing heads configured to pick up a wafer;
- and
- a polishing pad-measuring apparatus coupled to the polishing head assembly,
- wherein each of the polishing pads has a plurality of grooves extending from one surface toward another surface opposite to the one surface, and
- wherein the polishing pad-measuring apparatus includes,
- a foreign material-removing part configured to remove at least one foreign material disposed in the grooves, and
- a distance measuring part configured to measure depths of the grooves from which the foreign material-removing part has removed foreign material.
A chemical mechanical polishing facility comprising:
- a polishing station including a pad conditioner configured to condition a polishing pad;
- a polishing pad measuring apparatus including a foreign material-removing part and a distance measuring part, the foreign material-removing part being configured to remove at least one foreign material disposed in a plurality of grooves of the polishing pad, and the distance measuring part being configured to measure depths of the grooves of the polishing pad from which the foreign material-removing part has removed foreign material;
- and
- a controller configured to control the pad conditioner based on output from the distance measuring part.
Dependencies are inferred from the claim text.