# US 2017/0290148 A1 · Method for producing printed wiring board

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- Number: US 2017/0290148 A1
- Document ID: US20170290148A1
- Status: Published application
- Kind: A1
- Application number: 15/471,588
- Filed: 2017-03-28
- Published: 2017-10-05
- Earliest claimed: 2016-03-29
- Assignees: Ajinomoto Co., Inc.
- Applicants: Ajinomoto Co., Inc.
- Inventors: Masanori OHKOSHI; Hirohisa NARAHASHI
- Web page: https://patentgrep.com/patent/US20170290148A1

## CPC

- H05K 1/036: {Multilayers with layers of different types}
- B32B 7/12: using interposed adhesives or interposed materials with bonding properties
- B32B 37/06: characterised by the heating method
- B32B 37/12: characterised by using adhesives
- B32B 37/1207: {Heat-activated adhesive (B32B37/04 takes precedence)}
- H05K 3/0058: {Laminating printed circuit boards onto other substrates, e.g. metallic substrates (H05K1/0281 takes precedence)}
- H05K 3/388: {by the use of a metallic or inorganic thin film adhesion layer}
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/685: comprising multiple insulating layers
- B32B 2037/1253: {curable adhesive}
- B32B 2309/02: Temperature
- B32B 2309/025: Temperature vs time profiles
- B32B 2457/08: PCBs, i.e. printed circuit boards
- H10W 70/695: Organic materials
- H10W 90/00: Package configurations
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Printed wiring boards with reduced curing unevenness and the like may be produced by (A) preparing an adhesive sheet having a support and a resin composition layer provided on the support, (B) laminating the adhesive sheet on an internal layer substrate so that the resin composition layer is in contact with the internal layer substrate, and (C) thermally curing the adhesive sheet by heating from T1 (° C.) to T2 (° C.), to form an insulating layer, wherein the adhesive sheet is thermally cured so that a relation of Y>2700X is satisfied in which X is the sum of a difference between a maximum expansion rate of the support in the MD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate of the support at the end of heating and a difference between a maximum expansion rate of the support in the TD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate of the support at the end of heating and Y is the lowest melt viscosity of the resin composition layer at 120° C. or higher.

## Claims

### Claim 1

A method for producing a printed wiring board, comprising:
(A) preparing an adhesive sheet comprising a support and a resin composition layer provided on said support;
(B) laminating said adhesive sheet on an internal layer substrate so that said resin composition layer is in contact with said internal layer substrate; and
(C) thermally curing said adhesive sheet by heating from T1 (° C.) to T2 (° C.), to form an insulating layer, wherein
the thermally curing is performed so as to satisfy a relation of Y>2700X, in which X is a sum ((EAMD−EBMD) (EATD−EBTD)) of a difference (EAMD−EBMD) between a maximum expansion rate EAMD (%) of the support in an MD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBMD (%) of the support at T2 (° C.) at the end of heating and a difference (EATD−EBTD) between a maximum expansion rate EATD (%) of the support in a TD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBTD (%) of the support at T2 (° C.) at the end of heating, and Y is a lowest melt viscosity (poise) of the resin composition layer at 120° C. or higher.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the printed wiring board satisfies a relation of Y>2700X>300.

### Claim 3 (depends on 1)

The method according to claim 1, wherein X is 4 or less.

### Claim 4 (depends on 1)

The method according to claim 1, wherein Y is 4,000 poises or more.

### Claim 5

A method for producing a printed wiring board, comprising:
(A) preparing an adhesive sheet comprising a support and a resin composition layer provided on said support;
(B) laminating said adhesive sheet on an internal layer substrate so that said resin composition layer is in contact with said internal layer substrate; and
(C) thermally curing said adhesive sheet by heating from T1 (° C.) to T2 (° C.), to form an insulating layer, wherein
the adhesive sheet is thermally cured so that a sum ((EAMD−EBMD)+(EATD−EBTD)) of a difference (EAMD−EBMD) between a maximum expansion rate EAMD (%) of the support in an MD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBMD (%) of the support at T2 (° C.) at the end of heating and a difference (EATD−EBTD) between a maximum expansion rate EATD (%) of the support in a TD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBTD (%) of the support at T2 (° C.) at the end of heating is 4 or less and a lowest melt viscosity of the resin composition layer at T1 (° C.) or higher is 4,000 poises or more.

### Claim 6 (depends on 1)

The method according to claim 1, wherein T1 satisfies a relation of 50° C.≦T1≦150° C.

### Claim 7 (depends on 1)

The method according to claim 1, wherein T1 satisfies a relation of 120° C.≦T1≦150° C.

### Claim 8 (depends on 1)

The method according to claim 1, wherein T2 satisfies a relation of 150° C.≦T2≦240° C.

### Claim 9 (depends on 1)

The method to claim 1, wherein thermal curing in the step (C) is performed by heating the adhesive sheet at T1 (° C.) and then at T2 (° C.).

### Claim 10 (depends on 1)

The method according to claim 1, wherein the support is a plastic film.

### Claim 11 (depends on 1)

A semiconductor device, comprising a printed wiring board produced by a method according to claim 1.

### Claim 12 (depends on 5)

The method according to claim 5, wherein T1 satisfies a relation of 50° C.≦T1≦150° C.

### Claim 13 (depends on 5)

The method according to claim 5, wherein T1 satisfies a relation of 120° C.≦T1≦150° C.

### Claim 14 (depends on 5)

The method according to claim 5, wherein T2 satisfies a relation of 150° C.≦T2≦240° C.

### Claim 15 (depends on 5)

The method according to claim 5, wherein thermal curing in the step (C) is performed by heating the adhesive sheet at T1 (° C.) and then at T2 (° C.).

### Claim 16 (depends on 5)

The method according to claim 5, wherein the support is a plastic film.

### Claim 17 (depends on 5)

A semiconductor device, comprising a printed wiring board produced by a method according to claim 5.

### Claim 18

A layered body, comprising:
an internal layer substrate;
an insulating layer provided on said internal layer substrate; and
a support being in contact with said insulating layer, wherein
variation in a thickness of the insulating layer is 1 μm or less in a region except for 5% of a dimension of the support from edge portions of the support.

### Claim 19

An adhesive sheet, comprising a support and a resin composition layer provided on the support, wherein
during thermal curing by heating the adhesive sheet from T1 (° C.) to T2 (° C.), the adhesive sheet satisfies a relation of Y>2700X, wherein X is a sum ((EAMD−EBMD)+(EATD−EBTD)) of a difference (EAMD−EBMD) between a maximum expansion rate EAMD (%) of the support in an MD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBMD (%) of the support at T2 (° C.) at the end of heating and a difference (EATD−EBTD) between a maximum expansion rate EATD (%) of the support in a TD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate EBTD (%) of the support at T2 (° C.) at the end of heating, and Y is a lowest melt viscosity (poise) of the resin composition layer at 120° C. or higher.