# US 2017/0288666 A1 · Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure

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- Number: US 2017/0288666 A1
- Document ID: US20170288666A1
- Status: Published application
- Kind: A1
- Application number: 15/087,244
- Filed: 2016-03-31
- Published: 2017-10-05
- Earliest claimed: 2016-03-31
- Assignees: University of Iowa Research Foundation
- Applicants: University of Iowa Research Foundation
- Inventors: Michael Flatté
- Web page: https://patentgrep.com/patent/US20170288666A1

## CPC

- H03K 17/80: using non-linear magnetic devices; using non-linear dielectric devices {(H03K17/95, H03K17/97 take precedence)}
- G11C 11/1675: {Writing or programming circuits or methods}
- H03K 19/18: using galvano-magnetic devices, e.g. Hall-effect devices
- H10N 50/85: Materials of the active region
- H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
- H10N 52/80: Constructional details
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

## Claims

### Claim 1

A voltage-controlled magnetic-based device, comprising:
a magnetic insulator having a first contact plane;
a topological insulator adjacent the magnetic insulator at the first contact plane;
magnetic dopants within the topological insulator,
a first electrode at one side of the topological insulator at a second contact plane; and
a second electrode at an opposite side of the topological insulator at a third contact plane, wherein the second contact plane and the third contact plane are orthogonal to the first contact plane.

### Claim 2 (depends on 1)

The device of claim 1, wherein the magnetic dopants are located within an edge region of the topological insulator.

### Claim 3

(canceled)

### Claim 4 (depends on 1)

The device of claim 1, wherein the topological insulator comprises Bi2Se3.

### Claim 5 (depends on 1)

The device of claim 1, wherein the topological insulator comprises BiSb.

### Claim 6 (depends on 1)

The device of claim 1, wherein the magnetic dopants comprise chromium.

### Claim 7 (depends on 1)

The device of claim 1, wherein the magnetic dopants comprise iron.

### Claim 8 (depends on 1)

The device of claim 1, wherein the magnetic insulator comprises garnet.

### Claim 9

A method of operating a magnetic based device comprising a magnetic insulator having a first contact plane; a topological insulator adjacent the magnetic insulator at the first contact plane; magnetic dopants within the topological insulator; a first electrode at one side of the topological insulator at a second contact plane; and a second electrode at an opposite side of the topological insulator at a third contact plane, wherein the second contact plane and the third contact plane are orthogonal to the first contact plane, the method comprising:
applying a switching voltage across the first electrode and the second electrode to generate an electric field through the topological insulator for a length of time sufficient to change a first magnetization direction of the magnetic insulator to a second magnetization direction opposite of the first magnetization direction.

### Claim 10 (depends on 9)

The method of claim 9, wherein applying the switching voltage comprises applying a constant 0V to the first electrode and a switching voltage to the second electrode.

### Claim 11 (depends on 10)

The method of claim 10, wherein the switching voltage is a positive voltage.

### Claim 12 (depends on 10)

The method of claim 10, wherein the switching voltage is a negative voltage.

### Claim 13 (depends on 10)

The method of claim 10, wherein the switching voltage has a magnitude of 0.1 V to 1 V.

### Claim 14 (depends on 13)

The method of claim 13, wherein the switching voltage is applied at a switching frequency of 30 GHz.