# US 2017/0288616 A1 · Power amplification circuit

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- Number: US 2017/0288616 A1
- Document ID: US20170288616A1
- Status: Published application
- Kind: A1
- Application number: 15/430,890
- Filed: 2017-02-13
- Published: 2017-10-05
- Earliest claimed: 2016-03-31
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Satoshi GOTO
- Web page: https://patentgrep.com/patent/US20170288616A1

## CPC

- H03F 1/565: {using inductive elements}
- H03F 3/195: in integrated circuits
- H03F 3/21: with semiconductor devices only {(H03F3/245 takes precedence)}
- H03F 3/245: {with semiconductor devices only}
- H03F 2200/108: A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
- H03F 2200/18: the bias of the gate of a FET being controlled by a control signal
- H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
- H03F 2200/318: A matching circuit being used as coupling element between two amplifying stages
- H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
- H03F 2200/411: the output amplifying stage of an amplifier comprising two power stages
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H03F 2200/555: A voltage generating circuit being realised for biasing different circuit elements
- H03F: AMPLIFIERS

## Abstract

A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

## Claims

### Claim 1

A power amplification circuit comprising:
a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked,
the capacitor element including
a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and
a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and
a transistor that amplifies a radio-frequency signal;
wherein the radio-frequency signal is supplied to the one electrode of the first capacitor,
the other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and
the other electrode of the second capacitor is connected to the emitter of the transistor.

### Claim 2 (depends on 1)

The power amplification circuit according to claim 1,
wherein the other electrode of the second capacitor is connected to the emitter of the transistor via a through electrode.

### Claim 3

A power amplification circuit comprising:
a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked,
the capacitor element including
a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and
a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and
a transistor that amplifies a radio-frequency signal;
wherein the other electrode of the first capacitor and the one electrode of the second capacitor are connected to a collector of the transistor,
a first harmonic having a frequency that is around M times, where M is a natural number, a frequency of the radio-frequency signal is output from the one electrode of the first capacitor, and
a second harmonic having a frequency that is around N times, where N is a natural number, the frequency of the radio-frequency signal is output from the other electrode of the second capacitor.

### Claim 4

A power amplification circuit comprising:
a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked,
the capacitor element including
a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and
a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof;
a first amplifier that amplifies a radio-frequency signal and outputs a first amplified signal; and
a second amplifier that amplifies the first amplified signal and outputs a second amplified signal;
wherein the one electrode of the first capacitor is connected to an output terminal of the first amplifier and the other electrode of the first capacitor and the one electrode of the second capacitor are grounded via an inductor, and
the other electrode of the second capacitor is connected to an input terminal of the second amplifier and impedances are matched between the first and second amplifiers by the first capacitor, the second capacitor and the inductor.