# US 2017/0288564 A1 · Power conversion apparatus and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0288564 A1 - Document ID: US20170288564A1 - Status: Published application - Kind: A1 - Application number: 15/467,218 - Filed: 2017-03-23 - Published: 2017-10-05 - Earliest claimed: 2016-03-29 - Assignees: Keihin Corporation - Applicants: Keihin Corporation - Inventors: Takashi Ishii; Shinya Saito - Web page: https://patentgrep.com/patent/US20170288564A1 ## CPC - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02M 7/537: using semiconductor devices only, e.g. single switched pulse inverters - H02P 27/06: using DC to AC converters or inverters (H02P27/05 takes precedence) - H05K 1/181: associated with surface mounted components - H05K 3/341: Surface mounted components - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 70/041: {Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps} - H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers} - H10W 70/421: {Shapes or dispositions} - H10W 70/461: {specially adapted for cooling} - H10W 76/15: Containers comprising an insulating or insulated base - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass} - H05K 1/053: {the metal substrate being covered by an inorganic insulating layer} - H05K 2201/10166: Transistor - H05K 2201/10174: Diode - H05K 2201/1053: Mounted components directly electrically connected to each other, i.e. not via the PCB - H10W 72/07336: {Soldering or alloying} - H10W 72/07521: {Aligning} - H10W 72/07531: {Techniques} - H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding} - H10W 72/07536: {Soldering or alloying} - H10W 72/076: {of strap connectors} - H10W 72/07631: {Techniques} - H10W 72/07633: {Ultrasonic bonding, e.g. thermosonic bonding} - H10W 72/07636: {Soldering or alloying} - H10W 72/07651: {characterised by changes in properties of the strap connectors during connecting} - H10W 72/07653: {changes in shapes} - H10W 72/07654: {changes in dispositions} - H10W 72/534: {being rectangular} - H10W 72/5366: {the bond wires having kinks} - H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires} - H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices - H10W 72/631: {Shapes of strap connectors} - H10W 72/634: {Cross-sectional shape} - H10W 72/646: {the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector} - H10W 72/647: {Dispositions of multiple strap connectors} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/764: {between a chip and a stacked insulating package substrate, interposer or RDL} - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H02P: CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A second lead frame is set onto a conductive layer and a busbar. The second lead frame has holes previously formed at opposite ends thereof, and pieces of solder material or solder pieces are inserted into the holes. Then, the solder pieces are vibrated by an ultrasonically vibrating tool, whereby the solder pieces are melted without having a high temperature. The second lead frame is thus bonded to the conductive layer and the busbar. A semiconductor element and the busbar are connected by a first lead frame and the second lead frame. The connection structure thereof is such that the second lead frame to be bonded by ultrasonic bonding or other bonding methods is not directly in contact with the semiconductor element, which eliminates the risk of damage to the semiconductor element. ## Claims ### Claim 1 A power conversion apparatus comprising: an insulating substrate having a conductive layer formed on at least one side surface of an insulating plate; a semiconductor element mounted on the insulating substrate; a busbar arranged at a position apart from the semiconductor element by a predetermined length; and a conductive member for electrically connecting the busbar and the semiconductor element, wherein the conductive member is composed of a first connecting member which connects the semiconductor element and the conductive layer, and a second connecting member which connects the conductive layer and the busbar. ### Claim 2 (depends on 1) The power conversion apparatus according to claim 1, wherein the semiconductor element is an integrated element formed by integrating a diode and an insulated gate bipolar transistor. ### Claim 3 (depends on 1) The power conversion apparatus according to claim 1, wherein a lead frame is used as the first connecting member. ### Claim 4 (depends on 1) The power conversion apparatus according to claim 1, wherein a ribbon wire is used as the second connecting member. ### Claim 5 (depends on 1) The power conversion apparatus according claim 1, wherein a lead frame is used as the second connecting member. ### Claim 6 A power conversion apparatus comprising: an insulating substrate having a conductive layer formed on at least one side surface of an insulating plate; a semiconductor element mounted on the insulating substrate; a busbar arranged at a position apart from the semiconductor element by a predetermined length; and a conductive member for electrically connecting the busbar and the semiconductor element, wherein the conductive member is composed of a first connecting member extending from the semiconductor element, and a second connecting member extending from the busbar to be connected directly to the first connecting member. ### Claim 7 (depends on 6) The power conversion apparatus according to claim 6, wherein the semiconductor element is an integrated element formed by integrating a diode and an insulated gate bipolar transistor. ### Claim 8 (depends on 6) The power conversion apparatus according to claim 6, wherein a lead frame is used as the first connecting member. ### Claim 9 (depends on 6) The power conversion apparatus according to claim 6, wherein a ribbon wire is used as the second connecting member. ### Claim 10 (depends on 6) The power conversion apparatus according to claim 6, wherein a lead frame is used as the second connecting member. ### Claim 11 (depends on 1) A manufacturing method of the power conversion apparatus according to claim 1, in which a lead frame is used as the first connecting member, and which comprises performing reflow soldering to connect the lead frame at one end to the semiconductor element and at the other end to the conductive layer or the second connecting member. ### Claim 12 (depends on 1) A manufacturing method of the power conversion apparatus according to claim 1, in which a ribbon wire is used as the second connecting member, and which comprises performing ribbon bonding to connect the ribbon wire at one end to the conductive layer or the first connecting member and at the other end to the busbar. ### Claim 13 (depends on 1) A manufacturing method of the power conversion apparatus according to claim 1, in which a lead frame is used as the second connecting member, and which comprises performing ultrasonic bonding to connect the lead frame at one end to the conductive layer or the first connecting member and at the other end to the busbar. ### Claim 14 (depends on 6) A manufacturing method of the power conversion apparatus according to claim 6, in which a lead frame is used as the first connecting member, and which comprises performing reflow soldering to connect the lead frame at one end to the semiconductor element and at the other end to the conductive layer or the second connecting member. ### Claim 15 (depends on 6) A manufacturing method of the power conversion apparatus according to claim 6, in which a ribbon wire is used as the second connecting member, and which comprises performing ribbon bonding to connect the ribbon wire at one end to the conductive layer or the first connecting member and at the other end to the busbar. ### Claim 16 (depends on 6) A manufacturing method of the power conversion apparatus according to claim 6, in which a lead frame is used as the second connecting member, and which comprises performing ultrasonic bonding to connect the lead frame at one end to the conductive layer or the first connecting member and at the other end to the busbar.