# US 2017/0288151 A1 · Composition for forming organic semiconductor film and organic semiconductor element

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- Number: US 2017/0288151 A1
- Document ID: US20170288151A1
- Status: Published application
- Kind: A1
- Application number: 15/622,076
- Filed: 2017-06-14
- Published: 2017-10-05
- Earliest claimed: 2015-03-11
- Assignees: FUJIFILM Corporation
- Applicants: Fujifilm Corporation
- Inventors: Yuta SHIGENOI; Tetsu KITAMURA
- Web page: https://patentgrep.com/patent/US20170288151A1

## CPC

- H10K 85/6576: {comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene}
- C09D 11/033: characterised by the solvent
- C09D 11/102: containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
- C09D 11/36: based on non-aqueous solvents
- C09D 11/52: Electrically conductive inks
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10K 71/13: using printing techniques, e.g. ink-jet printing or screen printing
- H10K 71/135: {using ink-jet printing}
- H10K 71/15: characterised by the solvent used
- H10K 85/40: Organosilicon compounds, e.g. TIPS pentacene
- H10K 85/655: {comprising only sulfur as heteroatom}
- H10K 10/20: Organic diodes
- H10K 10/484: {characterised by the channel regions}
- H10K 85/141: {comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A composition for forming an organic semiconductor film includes an organic semiconductor represented by the following Formula A-1, and a solvent having a boiling point of from 150° C. to 300° C. and an SP value of from 15.0 to 18.0.

## Claims

### Claim 1

A composition for forming an organic semiconductor film, comprising:
an organic semiconductor represented by the following Formula A-1; and
a solvent, which has a boiling point of equal to or higher than 150° C. and equal to or lower than 300° C. and an SP value of equal to or higher than 15.0 and equal to or lower than 18.0,
wherein, in Formula A-1, T represents an aromatic hydrocarbon group having a ring-fused structure including 3 or more rings or a heteroaromatic group; L each independently represents a phenylene group or a thienylene group; Z each independently represents a group represented by the following Formula a-1; m each independently represents an integer of 0 to 4; n represents an integer of 1 to 8; and in a case where T does not have a ring-fused structure including 5 or more rings, m represents an integer of 1 to 4, and n represents an integer of 2 to 8,
wherein, in Formula a-1, p represents an integer of 1 to 20, q represents an integer of 0 to 20, and * represents a binding position with respect to other structures.

### Claim 2 (depends on 1)

The composition for forming an organic semiconductor film according to claim 1, further comprising a silicone compound having a structure represented by the following Formula D-1,
wherein, in Formula D-1, Rd1 and Rd2 each independently represent a monovalent hydrocarbon group which does not contain an ether bond.

### Claim 3 (depends on 2)

The composition for forming an organic semiconductor film according to claim 2, wherein, in Formula D-1, at least one of Rd1 or Rd2 is an alkyl group having 2 to 18 carbon atoms or an alkenyl group having 2 to 18 carbon atoms.

### Claim 4 (depends on 1)

The composition for forming an organic semiconductor film according to claim 1, wherein, in Formula A-1, T contains an acene, phenacene, or heteroacene structure having a ring-fused structure including 3 to 7 rings.

### Claim 5 (depends on 1)

The composition for forming an organic semiconductor film according to claim 1, wherein the organic semiconductor is an organic semiconductor represented by the following Formula A-2,
wherein, in Formula A-2, rings A to E each independently represent a benzene ring or a thiophene ring; R represents an alkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fluorine atom; L represents a phenylene group or a thienylene group; Z represents a group represented by Formula a-1; m represents an integer of 0 to 4; when there are two or more L's, L's may be the same as or different from each other; when there are two or more Z's, Z's may be the same as or different from each other; x represents an integer of 1 to 3; y represents 0 or 1; z represents 0 or 1; and the symmetry of a ring-fused structure formed of rings A to E is C2, C2v, or C2h.

### Claim 6 (depends on 1)

The composition for forming an organic semiconductor film according to claim 1, wherein, in Formula a-1, p is an integer of 1 to 6.

### Claim 7 (depends on 1)

An organic semiconductor element manufactured using the composition for forming an organic semiconductor film according to claim 1.