# US 2017/0288134 A1 · Magneto-resistance device

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- Number: US 2017/0288134 A1
- Document ID: US20170288134A1
- Status: Published application
- Kind: A1
- Application number: 15/507,254
- Filed: 2015-08-27
- Published: 2017-10-05
- Earliest claimed: 2014-08-28
- Assignees: Yeda Research and Development Co. Ltd.
- Applicants: Yeda Research and Development Co. Ltd.
- Inventors: Oren TAL; David RAKHMILEVICH
- Web page: https://patentgrep.com/patent/US20170288134A1

## CPC

- H10N 50/10: Magnetoresistive devices
- G11B 5/3906: {Details related to the use of magnetic thin film layers or to their effects}
- G11B 5/3909: {Arrangements using a magnetic tunnel junction}
- G11C 11/15: using multiple magnetic layers (G11C11/155 takes precedence)
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H01F 10/002: {Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence)}
- H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
- H10N 50/85: Materials of the active region
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

This invention relates to structures comprising magnetic materials and conjugated molecules. The invention relates to magneto-resistive devices based on such structures. Structures and devices of the invention can be used as magnetic switches, magnetic sensors and in devices such in/as memory devices.

## Claims

### Claim 1

A magneto-resistive device comprising at least one electrode, said electrode comprising a surface, wherein said surface comprising a ferromagnetic material, wherein said surface is attached to at least one conjugated molecule, such that said molecule is coupled to said surface via π-d hybridization between π molecular orbitals and d orbitals of the ferromagnetic material.

### Claim 2 (depends on 1)

The magneto-resistive device of claim 1, wherein said surface is unpassivated, thereby promoting said π-d hybridization.

### Claim 3 (depends on 1)

The magneto-resistive device of claim 1, wherein said surface is corrugated, thereby promoting said π-d hybridization.

### Claim 4 (depends on 3)

The magneto-resistive device of claim 3, wherein said corrugated surface provides reactivity of said surface toward said conjugated molecule(s).

### Claim 5 (depends on 1)

The magneto-resistive device of claim 1, wherein said electrode comprises Ni, and said conjugated molecules comprise acence or oligoacene molecules.

### Claim 6

(canceled)

### Claim 7 (depends on 1)

The magneto-resistive device of claim 1, wherein said device further comprises a second electrode, said second electrode comprises a surface, said surface at least partially facing said first electrode.

### Claim 8 (depends on 7)

The magneto-resistive device of claim 7, wherein one end of said conjugated molecule is attached to said surface of said first electrode and another end of said conjugated molecule is attached to a surface of said second electrode.

### Claim 9 (depends on 8)

The magneto-resistive device of claim 8, wherein said surface of said second electrode comprises a ferromagnetic material, wherein said attachment of said conjugated molecule to said surface comprises coupling of said conjugated molecule to said surface via π-d hybridization between π molecular orbitals of said conjugated molecule and d orbitals of said ferromagnetic material.

### Claim 10 (depends on 7)

The magneto-resistive device of claim 7, wherein said electrodes are configured as crossing wires with said conjugated molecule in between.

### Claim 11 (depends on 7)

The magneto-resistive device of claim 7, wherein said conjugated molecule act as a transport medium between said electrodes, thereby increasing selectivity of spin transport between said electrodes, thus amplifying magnetic effects in said device.

### Claim 12 (depends on 1)

The magneto-resistive device of claim 1, configured and operable as an anisotropic magneto-resistance (AMR) device characterized by anisotropic magneto-resistance.

### Claim 13 (depends on 7)

The magneto-resistive device of claim 7, wherein said surfaces of said first and second electrodes comprise a ferromagnetic material and wherein said device further comprises a non-magnetic metal located between said. surfaces, wherein at least one of said surfaces is chemically modified by said conjugated molecule, such that said device is a giant magneto-resistive (GMR) device.

### Claim 14 (depends on 7)

The magneto-resistive device of claim 7, wherein said surfaces of said first and second electrodes comprise a ferromagnetic material and wherein said device further comprises a dielectric material located between said surfaces, wherein at least one of said surfaces is chemically modified by said conjugated molecule, such that said device is a tunneling magneto-resistive (TMR) device.

### Claim 15

A magnetic memory device, comprising an array of junctions, each formed by a layer of conjugated molecules bridging ferromagnetic surfaces of two electrodes, wherein said conjugated molecule is coupled to the ferromagnetic surface of at least one of the electrodes via π-d hybridization of n molecular orbitals and d orbitals of the ferromagnetic material of said electrode.

### Claim 16

A layered magneto-resistive device comprising:
a first magnetic material layer;
a molecular layer comprising a first surface and a second surface; and
a second magnetic material layer;
wherein said first surface of said molecular layer is in contact with said first magnetic material layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
molecules of said first surface are coupled to said first magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material; and
molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said second magnetic material.

### Claim 17 (depends on 16)

The device of claim 16, wherein said organic conjugated molecules comprise acence or oligoacenes.

### Claim 18

(canceled)

### Claim 19 (depends on 16)

The device of claim 16, wherein said magnetic material is ferromagnetic or anti ferromagnetic.

### Claim 20

(canceled)

### Claim 21 (depends on 16)

The device of claim 16, wherein the thickness of said molecular layer ranges between 0.5 nm and 100 nm.

### Claim 22 (depends on 16)

The device of claim 16, wherein said device is anisotropic-magneto-resistance (AMR) device.

### Claim 23 (depends on 22)

The device of claim 22, wherein the magneto-conductance ranges between 10% and 300%.

### Claim 24

(canceled)

### Claim 25 (depends on 17)

The device of claim 17, wherein said ferromagnetic material comprises Fe, Ni, Co, oxides thereof, alloys thereof and combinations thereof.

### Claim 26

A layered magneto-resistive device comprising:
a first magnetic material layer;
a non-magnetic metal layer;
a molecular layer comprising a first surface and a second surface; and
a second magnetic material layer;
wherein said first surface of said molecular layer is in contact with said non-magnetic metal layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
molecules of said first surface are coupled to said non-magnetic metal layer; and
molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material.

### Claim 27 (depends on 26)

The device of claim 26, wherein said organic conjugated molecules comprise acene or oligoacenes.

### Claim 28

(canceled)

### Claim 29 (depends on 26)

The device of claim 26, wherein said magnetic material is ferromagnetic or antiferromagnetic.

### Claim 30

(canceled)

### Claim 31 (depends on 26)

The device of claim 26, wherein the thickness of said molecular layer ranges between 0.5 nm and 100 nm.

### Claim 32 (depends on 26)

The device of claim 26 wherein said device is giant-magneto-resistance (GMR) device.

### Claim 33 (depends on 32)

The device of claim 32, wherein the magneto-conductance ranges between 10% and 1000%.

### Claim 34

(canceled)

### Claim 35 (depends on 26)

The device of claim 26, wherein said ferromagnetic material comprises Fe, Ni, Co, oxides thereof, alloys thereof and combinations thereof.

### Claim 36 (depends on 26)

The device of claim 26, wherein said non-magnetic metal comprises Cu, Ta, Ru, Ag, Ti, Cr, or alloys thereof.

### Claim 37

A layered magneto-resistive device comprising:
a first magnetic material layer;
a dielectric layer;
a molecular layer comprising a first surface and a second surface; and
a second magnetic material layer;
wherein said first surface of said molecular layer is in contact with said dielectric layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
molecules of said first surface are coupled to said dielectric; and
molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material.

### Claim 38 (depends on 37)

The device of claim 37, wherein said organic conjugated molecules comprise acene or oligoacenes.

### Claim 39

(canceled)

### Claim 40 (depends on 37)

The device of claim 37, wherein said magnetic material is ferromagnetic or antiferromagnetic.

### Claim 41

(canceled)

### Claim 42 (depends on 37)

The device of claim 37, wherein the thickness of said molecular layer ranges between 0.5 nm and 100 nm.

### Claim 43 (depends on 37)

The device of claim 37, wherein said device is tunneling-magneto-resistance (TMR) device.

### Claim 44 (depends on 43)

The device of claim 43, wherein the magneto-conductance ranges between 10% and 1000%.

### Claim 45

(canceled)

### Claim 46 (depends on 37)

The device of claim 37, wherein said ferromagnetic material comprises Fe, Ni, Co, oxides thereof, alloys thereof and combinations thereof.

### Claim 47 (depends on 37)

The device of claim 37, wherein said dielectric comprises metal-oxides, silicon oxide, polymers, insulating molecules (e.g. alkanes) or a combination thereof.

### Claim 48 (depends on 1)

The magneto-resistive device of claim 1, wherein said surface is attached to between 1-10 conjugated molecules.

### Claim 49 (depends on 48)

The magneto-resistive device of claim 48, wherein said surface is attached to 1 conjugated molecule.