# US 2017/0288102 A1 · Through backplane laser irradiation for die transfer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0288102 A1 - Document ID: US20170288102A1 - Status: Published application - Kind: A1 - Application number: 15/463,042 - Filed: 2017-03-20 - Published: 2017-10-05 - Earliest claimed: 2016-04-04 - Assignees: Glo AB - Applicants: Glo AB - Inventors: Sharon N. FARRENS; Anusha POKHRIYAL - Web page: https://patentgrep.com/patent/US20170288102A1 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/018: {Bonding of wafers} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/00: Package configurations - H10H 20/0364: {of interconnections} - H10W 72/0198: {batch processes} - H10W 72/073: {of die-attach connectors} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Light emitting devices can be disposed on the front side of a transparent backplane. A laser beam can be irradiated through the transparent backplane and onto a component located on the front side of the transparent backplane. In one embodiment, the component may be a solder material portion that is reflowed to bond the light emitting devices to the transparent backplane. In another embodiment, the component may be a solder material bonded to a defective bonded light emitting device. In this case, the laser irradiation can reflow the solder material to dissociate the defective bonded light emitting device from the transparent backplane. In yet another embodiment, the component may be a device component that is electrically modified by the laser irradiation. ## Claims ### Claim 1 A method of manufacturing an assembly of a backplane and light emitting devices, the method comprising: providing a substrate with dies of light emitting devices thereupon, wherein a device-side bonding pad is provided on each of the light emitting devices; bonding at least one of the light emitting devices to the backplane; and dissociating each of the at least one bonded light emitting device from the substrate by irradiating a laser beam through the substrate and onto each region of the substrate in contact with the at least one bonded light emitting device. ### Claim 2 (depends on 1) The method of claim 1, wherein bonding of the at least one light emitting devices to the backplane is performed by irradiating another laser beam through the backplane. ### Claim 3 (depends on 1) The method of claim 1, wherein the laser beam ablates each region of the substrate in contact with the at least one bonded light emitting device. ### Claim 4 (depends on 1) The method of claim 1, wherein: the substrate comprises sapphire; and each region of the substrate in contact with the at least one bonded light emitting device prior to application the laser beam comprises a compound semiconductor material. ### Claim 5 (depends on 1) The method of claim 1, wherein each of the light emitting devices comprises a vertical stack of a multi-quantum-well, a p-doped III-V compound semiconductor layer, and a transparent conductive oxide layer. ### Claim 6 (depends on 1) The method of claim 1, wherein: the laser beam has an ultraviolet wavelength; and the backplane comprises a polymeric plastic material that is transparent at the ultraviolet wavelength of the laser beam. ### Claim 7 (depends on 1) The method of claim 1, wherein the backplane comprises a metal interconnect layer including a plurality of metal interconnect structures embedded in at least one insulating material and providing electrical connections between the light emitting devices on the backplane and input/output pins of the backplane. ### Claim 8 A method of manufacturing an assembly of a backplane and light emitting devices, the method comprising: transferring light emitting devices from a substrate to a backplane by bonding the light emitting devices to bonding sites on the backplane; and dissociating a selected light emitting device among the transferred light emitting devices from the backplane by reflowing a solder material portion attached to the selected light emitting device employing a laser irradiation process, wherein a laser beam passes through the backplane during the laser irradiation process. ### Claim 9 (depends on 8) The method of claim 8, further comprising providing a vacuum suction to the selected light emitting device during the laser irradiation process. ### Claim 10 (depends on 9) The method of claim 9, further comprising applying a vacuum chuck to the transferred light emitting devices prior to, and during, the laser irradiation process, wherein the vacuum suction to the selected light emitting device is provided by the vacuum chuck. ### Claim 11 (depends on 10) The method of claim 10, further comprising removing the dissociated light emitting device by maintaining the vacuum suction to the dissociated light emitting device while separating the vacuum chuck from a subset of the light emitting devices that remain on the backplane after the laser irradiation process. ### Claim 12 (depends on 8) The method of claim 8, wherein each of the light emitting devices comprises a vertical stack of a multi-quantum-well, a p-doped III-V compound semiconductor layer, and a transparent conductive oxide layer. ### Claim 13 (depends on 8) The method of claim 8, wherein: the laser beam has an ultraviolet wavelength; and the backplane comprises a polymeric plastic material that is transparent at the ultraviolet wavelength of the laser beam. ### Claim 14 (depends on 8) The method of claim 8, wherein the backplane comprises a metal interconnect layer including a plurality of metal interconnect structures embedded in at least one insulating material and providing electrical connections between the light emitting devices on the backplane and input/output pins of the backplane. ### Claim 15 A method of manufacturing an assembly of a backplane and light emitting devices, the method comprising: transferring light emitting devices from a substrate to a backplane by bonding the light emitting devices to bonding sites on the backplane, wherein the backplane comprises a device component; and altering an electrical characteristic of the device component on the backplane by irradiating a laser beam passes through the backplane and onto the device component, wherein the laser beam induces a physical change in the device component. ### Claim 16 (depends on 15) The method of claim 15, wherein the device component is selected from a laser fuse, a conductive trace, and a routing circuit for powering the light emitting devices. ### Claim 17 (depends on 15) The method of claim 15, wherein each of the light emitting devices comprises a vertical stack of a multi-quantum-well, a p-doped III-V compound semiconductor layer, and a transparent conductive oxide layer. ### Claim 18 (depends on 15) The method of claim 15, wherein: the laser beam has an ultraviolet wavelength; and the backplane comprises a polymeric plastic material that is transparent at the ultraviolet wavelength of the laser beam. ### Claim 19 (depends on 15) The method of claim 15, wherein the backplane comprises a metal interconnect layer including a plurality of metal interconnect structures embedded in at least one insulating material and providing electrical connections between the light emitting devices on the backplane and input/output pins of the backplane.