# US 2017/0288090 A1 · Active layer structure, semiconductor light emitting element, and display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0288090 A1 - Document ID: US20170288090A1 - Status: Published application - Kind: A1 - Application number: 15/532,094 - Filed: 2015-10-01 - Published: 2017-10-05 - Earliest claimed: 2014-12-19 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: YOSHIAKI WATANABE; TAKAYUKI KAWASUMI - Web page: https://patentgrep.com/patent/US20170288090A1 ## CPC - H10H 20/042: {Superluminescent diodes} - G09G 3/025: {with scanning or deflecting the beams in two directions or dimensions} - G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED] - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/825: containing nitrogen, e.g. GaN - G02B 26/10: Scanning systems - G09G 2320/0233: Improving the luminance or brightness uniformity across the screen - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract [Solving Means] A semiconductor light emitting element includes a first conductive layer, a second conductive layer, and an active layer provided between the first conductive layer and the second conductive layer. The first conductive layer has a current constriction structure, a current injection region being constricted in the current constriction structure. The active layer includes a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure. ## Claims ### Claim 1 A semiconductor light emitting element, comprising: a first conductive layer having a current constriction structure, a current injection region being constricted in the current constriction structure; a second conductive layer; and an active layer provided between the first conductive layer and the second conductive layer, the active layer including a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure. ### Claim 2 (depends on 1) The semiconductor light emitting element according to claim 1, wherein the active layer includes one or more second quantum well layers, the one or more second quantum well layers having a light emission recombination level energy gap corresponding to a second light emission wavelength longer than the first light emission wavelength, and one or more third quantum well layers, the one or more third quantum well layers having a light emission recombination level energy gap corresponding to a third light emission wavelength shorter than the first light emission wavelength. ### Claim 3 (depends on 2) The semiconductor light emitting element according to claim 2, wherein the active layer includes a plurality of second quantum well layers and a plurality of third quantum wells respectively as the one or more second quantum well layers and the one or more third quantum well layers, the plurality of second quantum well layers having a plurality of different light emission recombination level energy gaps, the plurality of third quantum wells having a plurality of different light emission recombination level energy gaps, and the second quantum well layers and the third quantum well layers are alternately arranged in a direction away from the first quantum well layer, light emission wavelengths corresponding to the light emission recombination level energy gaps of the plurality of second quantum well layers being arranged in ascending order from the first light emission wavelength in a spectrum diagram showing a relationship between a light emission wavelength and output, light emission wavelengths corresponding to the light emission recombination level energy gaps of the plurality of third quantum well layers being arranged in descending order from the first light emission wavelength in the spectrum diagram. ### Claim 4 (depends on 1) The semiconductor light emitting element according to claim 1, wherein the plurality of quantum well layers are configured to have different compositions. ### Claim 5 (depends on 1) The semiconductor light emitting element according to claim 1, wherein the plurality of quantum well layers are configured to have different well widths. ### Claim 6 An active layer structure, comprising: a first conductive layer having a current constriction structure, a current injection region being constricted in the current constriction structure; a second conductive layer; and an active layer provided between the first conductive layer and the second conductive layer, wherein the active layer includes a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure. ### Claim 7 A display apparatus, comprising: a semiconductor light emitting element; and an image generation unit that is capable of two-dimensionally scanning light emitted from the semiconductor light emitting element and controlling a brightness of the projected light on the basis of image data, wherein the semiconductor light emitting element includes a first conductive layer having a current constriction structure, a current injection region being constricted in the current constriction structure, a second conductive layer, and an active layer provided between the first conductive layer and the second conductive layer, the active layer including a plurality of quantum well layers, a first light emission wavelength being in a wavelength range of an intensity peak of an entire light emission spectrum, the first light emission wavelength corresponding to a light emission recombination level energy gap of a first quantum well layer of the plurality of quantum well layers, the first quantum well layer being provided at a position closest to the current constriction structure.