# US 2017/0288089 A1 · Light emitting diodes with n-polarity and associated methods of manufacturing > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0288089 A1 - Document ID: US20170288089A1 - Status: Published application - Kind: A1 - Application number: 15/631,836 - Filed: 2017-06-23 - Published: 2017-10-05 - Earliest claimed: 2010-02-26 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Zaiyuan Ren; Thomas Gehrke - Web page: https://patentgrep.com/patent/US20170288089A1 ## CPC - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. ## Claims ### Claim 1 A light emitting diode, comprising: a substrate having a substrate material; a first semiconductor material directly on a surface of the substrate; an active region on the first semiconductor material, the active region having a nitrogen-polarity crystal structure; a second semiconductor material on the active region; and wherein the light emitting diode does not include a nitrodizing product of the substrate material at an interface between the surface of the substrate and the first semiconductor material. ### Claim 2 (depends on 1) The light emitting diode of claim 1 wherein: the substrate includes a silicon wafer having a lattice structure; the substrate material includes silicon (Si); the first semiconductor material includes an N-type gallium nitride (GaN) material; the active region includes an indium gallium nitride (InGaN) material; the second semiconductor material includes a P-type GaN material; and the silicon wafer includes a nitrogen-rich environment at least proximate the surface of the silicon wafer, the nitrogen-rich environment having a plurality of nitrogen (N) atoms trapped in the lattice structure of the silicon wafer without forming a silicon nitride (SiN) crystal structure with the silicon (Si) in the silicon wafer. ### Claim 3 (depends on 1) The light emitting diode of claim 1 wherein: the substrate includes a silicon wafer; the substrate material includes silicon (Si); the first semiconductor material includes an N-type gallium nitride (GaN) material; the active region includes an indium gallium nitride (InGaN) material; the second semiconductor material includes a P-type GaN material; and the light emitting diode does not include crystalline silicon nitride (SiN) at the interface between the surface of the silicon wafer and the N-type GaN material. ### Claim 4 (depends on 1) The light emitting diode of claim 1 wherein: the substrate includes a silicon wafer; the substrate material includes silicon (Si); and the light emitting diode does not include crystalline silicon nitride (SiN) at the interface between the surface of the silicon wafer and the first semiconductor material. ### Claim 5 A light emitting diode device, comprising: a substrate material having a first major surface and an opposite second major surface; an active region carried by the substrate material, wherein a distance between the first major surface of the substrate material and the active region is less than a distance between the second major surface of the substrate material and the active region; nitrogen atoms adsorbed onto the first major surface of the substrate material, wherein an interaction energy between the nitrogen atoms and the substrate material is less than 10.0 kcal/mol; and a nitrogen-polar material between the substrate material and the active region. ### Claim 6 (depends on 5) The light emitting diode device of claim 5 wherein there is no nitrodizing product of the substrate material between the substrate material and the active region. ### Claim 7 (depends on 5) The light emitting diode device of claim 5 wherein the substrate material is silicon. ### Claim 8 (depends on 7) The light emitting diode device of claim 7 wherein there is no silicon nitride between the substrate material and the active region. ### Claim 9 (depends on 5) The light emitting diode of claim 5 wherein the nitrogen atoms are adsorbed onto the first major surface of the substrate material by Van der Waals forces. ### Claim 10 (depends on 5) The light emitting diode device of claim 5 wherein: the nitrogen-polar material includes a first semiconductor material directly adjacent to a first side of the active region; the light emitting diode device further comprises a second semiconductor material directly adjacent to a second side of the active region opposite to the first side of the active region; the first semiconductor material is one of a P-type semiconductor material and an N-type semiconductor material; and the second semiconductor material is the other of the P-type semiconductor material and the N-type semiconductor material. ### Claim 11 (depends on 10) The light emitting diode device of claim 10 wherein the N-type semiconductor material is N-type gallium nitride. ### Claim 12 (depends on 10) The light emitting diode device of claim 10 wherein the P-type semiconductor material is P-type gallium nitride. ### Claim 13 (depends on 10) The light emitting diode device of claim 10 wherein the first semiconductor material is directly adjacent to the substrate material. ### Claim 14 (depends on 10) The light emitting diode device of claim 10 wherein the nitrogen-polar material includes a buffer material between the substrate material and the first semiconductor material. ### Claim 15 A light emitting diode device, comprising: a substrate material having a first major surface and an opposite second major surface; an active region carried by the substrate material, wherein a distance between the first major surface of the substrate material and the active region is less than a distance between the second major surface of the substrate material and the active region; nitrogen atoms diffused into the substrate material via the first major surface of the substrate material, wherein an interaction energy between the nitrogen atoms and the substrate material is less than 10.0 kcal/mol; and a nitrogen-polar material between the substrate material and the active region. ### Claim 16 (depends on 15) The light emitting diode device of claim 15 wherein there is no nitrodizing product of the substrate material between the substrate material and the active region. ### Claim 17 (depends on 15) The light emitting diode device of claim 15 wherein: the nitrogen-polar material includes a first semiconductor material directly adjacent to a first side of the active region; the light emitting diode device further comprises a second semiconductor material directly adjacent to a second side of the active region opposite to the first side of the active region; the first semiconductor material is one of a P-type semiconductor material and an N-type semiconductor material; and the second semiconductor material is the other of the P-type semiconductor material and the N-type semiconductor material. ### Claim 18 (depends on 17) The light emitting diode device of claim 17 wherein the N-type semiconductor material is N-type gallium nitride. ### Claim 19 (depends on 17) The light emitting diode device of claim 17 wherein the P-type semiconductor material is P-type gallium nitride. ### Claim 20 (depends on 17) The light emitting diode device of claim 17 wherein the first semiconductor material is directly adjacent to the substrate material. ### Claim 21 (depends on 17) The light emitting diode device of claim 17 wherein the nitrogen-polar material includes a buffer material between the substrate material and the first semiconductor material.