# US 2017/0287977 A1 ยท Power harvesting for integrated circuits > Agents: this data is available as JSON from the patentgrep API and MCP server โ€” see https://patentgrep.com/llms.txt - Number: US 2017/0287977 A1 - Document ID: US20170287977A1 - Status: Published application - Kind: A1 - Application number: 15/479,140 - Filed: 2017-04-04 - Published: 2017-10-05 - Earliest claimed: 2016-04-04 - Assignees: Synopsys, Inc. - Applicants: Synopsys, Inc. - Inventors: Victor Moroz; Jamil Kawa - Web page: https://patentgrep.com/patent/US20170287977A1 ## CPC - H10N 19/00: Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00 - H10N 10/01: Manufacture or treatment - H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device - H10N 10/82: Interconnections - H10N 10/855: comprising compounds containing boron, carbon, oxygen or nitrogen - H10N 10/8556: {comprising compounds containing germanium or silicon} - H10N 10/853: comprising arsenic, antimony or bismuth (H10N10/852 takes precedence) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials. ## Claims ### Claim 1 A device comprising: an integrated circuit die having an integrated circuit thereon, the integrated circuit having power terminals for connection to a primary power source; a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure; and a powering structure arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. ### Claim 2 (depends on 1) The device of claim 1, wherein the powering structure comprises an energy storage component connected to the first and second terminals of the thermoelectric generator. ### Claim 3 (depends on 2) The device of claim 2, wherein the energy storage component comprises a capacitor having first and second terminals connected respectively to the first and second terminals of the thermoelectric generator. ### Claim 4 (depends on 2) The device of claim 2, wherein the energy storage component comprises a capacitor mounted on the die. ### Claim 5 (depends on 1) The device of claim 1, wherein the powering structure comprises a voltage converter having an input port connected to the first and second terminals of the thermoelectric generator, and having an output port coupled to help power the integrated circuit. ### Claim 6 (depends on 5) The device of claim 5, wherein at least part of the voltage converter is part of the integrated circuit. ### Claim 7 (depends on 1) The device of claim 1, wherein the thermoelectric generator structure comprises: a first semiconductor body material having first and second opposite surfaces, the second surface being in closer thermal communication with the integrated circuit die than the first surface is, the first semiconductor body material having a bulk thermal conductivity which is lower than that of silicon, wherein the first terminal of the thermoelectric generator structure is connected to the first surface of the semiconductor body material and the second terminal of the thermoelectric generator structure is connected to the second surface of the semiconductor body material. ### Claim 8 (depends on 7) The device of claim 7, wherein the first semiconductor body material has a bulk thermal conductivity which is between 1/300 and โ…“ of the bulk thermal conductivity of silicon. ### Claim 9 (depends on 7) The device of claim 7, wherein the first semiconductor body material comprises an N-doped semiconductor. ### Claim 10 (depends on 7) The device of claim 7, wherein the first semiconductor body material comprises a P-doped semiconductor. ### Claim 11 (depends on 7) The device of claim 7, wherein the second surface of the first semiconductor body material is at least partially in physical contact with the die, and wherein the first surface of the first semiconductor body material is spaced from the die. ### Claim 12 (depends on 11) The device of claim 11, wherein the powering structure comprises: a first electric conductor having a surface that is in electrical communication with the first surface of the first semiconductor body material; and a second electric conductor having a surface that is in electrical communication with the second surface of the first semiconductor body material. ### Claim 13 (depends on 1) The device of claim 1, wherein the thermoelectric generator structure comprises: an N-doped semiconductor material having first and second opposite surfaces, the second surface of the N-doped semiconductor material being in closer thermal communication with the integrated circuit die than the first surface of the N-doped semiconductor material is, the N-doped semiconductor material having a bulk thermal conductivity which is lower than that of silicon, a P-doped semiconductor material having first and second opposite surfaces, the second surface of the P-doped semiconductor material being in closer thermal communication with the integrated circuit die than the first surface of the P-doped semiconductor material is, the P-doped semiconductor material having a bulk thermal conductivity which is lower than that of silicon, wherein the first surface of the N-doped semiconductor material is connected electrically to the first surface of the P-doped semiconductor material, and wherein the powering structure comprises: a first voltage supply conductor having a surface that is in electrical communication with the first surface of the N-doped semiconductor material; and a second voltage supply conductor having a surface that is in electrical communication with the first surface of the P-doped semiconductor material. ### Claim 14 (depends on 13) The device of claim 13, wherein the N-doped semiconductor material and the P-doped semiconductor material each have a respective bulk thermal conductivity which is between 1/300 and โ…“ of the bulk thermal conductivity of silicon. ### Claim 15 (depends on 13) The device of claim 13, wherein the second surface of the N-doped semiconductor material and the second surface of the P-doped semiconductor material are each at least partially in physical contact with the die, and wherein the first surface of the N-doped semiconductor material and the first surface of the P-doped semiconductor material are each spaced from the die. ### Claim 16 (depends on 13) The device of claim 13, wherein the first surface of the N-doped semiconductor material is connected electrically to the die. ### Claim 17 A device comprising: an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source and further having power support terminals; a capacitor attached to the die and having first and second electrodes electrically connected to respective ones of the power support terminals of the integrated circuit; an integrated circuit package comprising a body which includes at least a first semiconductor material, the body having outer and inner surfaces, the inner surface of the body being in thermal contact with the integrated circuit die and the outer surface of the body being spaced from the integrated circuit die so as to develop a thermal gradient from the inner surface toward the outer surface of the body; and a first electrical conductor connected electrically to the outer surface of the body, and connected further to the first capacitor electrode. ### Claim 18 (depends on 17) The device of claim 17, further comprising of a second electrical conductor connected electrically to the inner surface of the body, and connected further to the second capacitor electrode. ### Claim 19 (depends on 18) The device of claim 18, wherein the second electrical conductor comprises at least part of the die. ### Claim 20 (depends on 18) The device of claim 18, wherein the second electrical conductor comprises an electrically and thermally conductive adhesive disposed between the inner surface of the body and the die. ### Claim 21 (depends on 17) The device of claim 17, further comprising an electrically insulating and thermally conductive adhesive disposed between the inner surface of the body and the die. ### Claim 22 (depends on 17) The device of claim 17, wherein all the semiconductor material in the body is a single member of the group consisting of N-doped semiconductor and P-doped semiconductor. ### Claim 23 (depends on 17) The device of claim 17, wherein the power support terminals of the integrated circuit are the same as the power supply terminals of the integrated circuit. ### Claim 24 (depends on 17) The device of claim 17, wherein the integrated circuit die has a front side surface and a back side surface, the integrated circuit being formed on the front side surface, wherein the capacitor is attached to the die on the back side surface, wherein the first electrode of the capacitor is connected to one of the power support terminals through a first electrical conductor passing through the die from the back side to the front side, and wherein the second electrode of the capacitor is connected to one of the power support terminals through a second electrical conductor passing through the die from the back side to the front side. ### Claim 25 (depends on 17) The device of claim 17, wherein the first electrical conductor coats the outer surface of the body. ### Claim 26 (depends on 25) The device of claim 25, wherein the integrated circuit die has a front side surface and a back side surface, the integrated circuit being formed on the front side surface, wherein the capacitor is attached to the die on the back side surface, and wherein the first electrical conductor is connected to the first capacitor electrode through a hole in the first semiconductor material. ### Claim 27 (depends on 17) The device of claim 17, wherein the body includes a first body portion that is N-doped semiconductor and a second body portion that is P-doped semiconductor and dielectric between the first and second body portions, the first body portion having an outer surface coincident with a first portion of the outer surface of the body and an inner portion coincident with a first portion of the inner surface of the body, and the second body portion having an outer surface coincident with a second portion of the outer surface of the body and an inner surface coincident with a second portion of the inner surface of the body. ### Claim 28 (depends on 27) The device of claim 27, wherein the first electrical conductor coats the outer surface of the first portion of the body, further comprising a second electrical conductor coating the outer surface of the second portion of the body, and connected to the second capacitor electrode. ### Claim 29 (depends on 27) The device of claim 27, further comprising an electrically insulating and thermally conductive adhesive disposed between the inner surface of the body and the die. ### Claim 30 A method for making a structure, comprising: providing an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source; disposing a thermoelectric generator structure in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure; and forming a powering structure arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. ### Claim 31 (depends on 30) The method of claim 30, wherein forming a powering structure comprises attaching a capacitor to the die. ### Claim 32 (depends on 30) The method of claim 30, wherein disposing a thermoelectric generator structure comprises: providing an integrated circuit package including a body which includes at least a first semiconductor material, the body having outer and inner surfaces; attaching the integrated circuit die to the inner surface of the body; and electrically connecting at least a first portion of the outer surface of the body to the first capacitor electrode. ### Claim 33 (depends on 32) The method of claim 32, further comprising electrically connecting the inner surface of the body to the second capacitor electrode. ### Claim 34 (depends on 32) The method of claim 32, wherein attaching the integrated circuit die to the inner surface of the body comprises attaching the integrated circuit die using an electrically insulating and thermally conductive adhesive. ### Claim 35 (depends on 32) The method of claim 32, wherein all the semiconductor material in the body is a single member of the group consisting of N-doped semiconductor and P-doped semiconductor, and wherein the first portion of the outer surface of the body is the entire outer surface of the body. ### Claim 36 (depends on 32) The method of claim 32, wherein electrically connecting the first portion of the outer surface of the body to the first capacitor electrode comprises coating the outer surface of the body with a first electrically conductive coating and connecting the first electrically conductive coating to the first capacitor electrode. ### Claim 37 (depends on 36) The method of claim 36, further comprising coating the first electrically conductive coating with a dielectric coating. ### Claim 38 (depends on 32) The method of claim 32, wherein the body includes a first body portion that is N-doped semiconductor and a second body portion that is P-doped semiconductor and dielectric between the first and second body portions, the first body portion having an outer surface being the first portion of the outer surface of the body and an inner portion coincident with a first portion of the inner surface of the body, and the second body portion having an outer surface coincident with a second portion of the outer surface of the body and an inner surface coincident with a second portion of the inner surface of the body. ### Claim 39 (depends on 38) The method of claim 38, wherein electrically connecting the first portion of the outer surface of the body to the first capacitor electrode comprises coating the outer surface of the first body portion with a first electrically conductive coating and connecting the first electrically conductive coating to the first capacitor electrode, further comprising coating the outer surface of the second body portion with a second electrically conductive coating and connecting the second electrically conductive coating to the second capacitor electrode. ### Claim 40 A method for harvesting integrated circuit chip self-heating, comprising: providing a device having an integrated circuit die on which an integrated circuit is formed; powering the device from a power supply to generate heat; thermoelectrically converting at least part of the heat to electrical energy; and using the thermoelectrically-generated electrical energy to help power the device.