# US 2017/0287971 A1 · Image sensor and electronic device including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287971 A1 - Document ID: US20170287971A1 - Status: Published application - Kind: A1 - Application number: 15/283,698 - Filed: 2016-10-03 - Published: 2017-10-05 - Earliest claimed: 2016-03-31 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Gae Hwang LEE; Kwang Hee LEE; Kyu Sik Kim; Sung Young YUN; Dong-Seok LEEM; Yong Wan JIN - Web page: https://patentgrep.com/patent/US20170287971A1 ## CPC - H10F 39/182: {Colour image sensors} - H10F 39/8033: {Photosensitive area} - H10F 39/811: {Interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor. ## Claims ### Claim 1 An image sensor, comprising a semiconductor substrate, and a photoelectric conversion device on the semiconductor substrate, the photoelectric conversion device including a plurality of pixel electrodes, a light absorption layer, and a common electrode, the plurality of pixel electrodes including a first pixel electrode and a second pixel electrode, wherein the photoelectric conversion device includes a first photoelectric conversion region defined by an overlapping region of the first pixel electrode, the light absorption layer, and the common electrode, the first photoelectric conversion region being associated with a first photoelectric sensitivity, and a second photoelectric conversion region defined by an overlapping region of the second pixel electrode, the light absorption layer, and the common electrode, the second photoelectric conversion region being associated with a second photoelectric sensitivity, and wherein the first photoelectric sensitivity is greater than the second photoelectric sensitivity. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein, the first photoelectric region is associated with a first photoelectric conversion efficiency, the second photoelectric region is associated with a second photoelectric conversion efficiency, and the first photoelectric conversion efficiency is greater than the second photoelectric conversion efficiency. ### Claim 3 (depends on 2) The image sensor of claim 2, wherein, the second photoelectric conversion region includes a charge control layer between the second pixel electrode and the light absorption layer, and the charge control layer is configured to reduce charge mobility from the light absorption layer to the second pixel electrode. ### Claim 4 (depends on 3) The image sensor of claim 3, wherein the charge control layer includes an inorganic material. ### Claim 5 (depends on 3) The image sensor of claim 3, wherein the charge control layer includes at least one through-hole between the second pixel electrode and the light absorption layer. ### Claim 6 (depends on 2) The image sensor of claim 2, wherein the photoelectric conversion device includes a planarization layer between the first pixel electrode and the second pixel electrode and between the second pixel electrode and the light absorption layer. ### Claim 7 (depends on 6) The image sensor of claim 6, wherein the planarization layer includes at least one of a silicon oxide material and a silicon nitride material. ### Claim 8 (depends on 2) The image sensor of claim 2, wherein, the first pixel electrode includes a first transparent conductor, the second pixel electrode includes a second transparent conductor, and a sheet resistance of the first transparent conductor is lower than a sheet resistance of the second transparent conductor. ### Claim 9 (depends on 8) The image sensor of claim 8, wherein, the first transparent conductor and the second transparent conductor include one of an indium tin oxide (ITO) material or an indium zinc oxide (IZO) material, the ITO and the IZO materials have different sheet resistances, and a sheet resistance of the first transparent conductor is less than a sheet resistance of the second transparent conductor by a factor of at least approximately ten. ### Claim 10 (depends on 8) The image sensor of claim 8, wherein, the first transparent conductor and the second transparent conductor each include a different metal, respectively, and a sheet resistance of the first transparent conductor is less than a sheet resistance of the second transparent conductor by a factor of at least approximately ten. ### Claim 11 (depends on 2) The image sensor of claim 2, wherein the first pixel electrode and the second pixel electrode have different areas, respectively. ### Claim 12 (depends on 2) The image sensor of claim 2, wherein the first photoelectric conversion efficiency is greater than the second photoelectric conversion efficiency by a factor of at least approximately 1.5. ### Claim 13 (depends on 1) The image sensor of claim 1, wherein the first pixel electrode and the second pixel electrode have different areas, respectively. ### Claim 14 (depends on 13) The image sensor of claim 13, wherein an area of the first pixel electrode is greater than an area of the second pixel electrode by a factor of at least approximately 1.5. ### Claim 15 (depends on 1) The image sensor of claim 1, wherein the light absorption layer is configured to selectively absorb a first wavelength spectrum of light selected from one of, a wavelength spectrum associated with red light, a wavelength spectrum associated with green light, and a wavelength spectrum associated with blue light, the semiconductor substrate includes a first photo-sensing device configured to sense a second wavelength spectrum of light selected from one of a wavelength spectrum associated with red light, a wavelength spectrum associated with green light, and a wavelength spectrum associated with blue light, and a second photo-sensing device configured to sense a third wavelength spectrum of light selected from one of a wavelength spectrum associated with red light, a wavelength spectrum associated with green light, and a wavelength spectrum associated with blue light, and the first wavelength spectrum of light, the second wavelength spectrum of light and the third wavelength spectrum of light are each different wavelength spectra of light. ### Claim 16 (depends on 15) The image sensor of claim 15, wherein the first photo-sensing device and the second photo-sensing device are substantially parallel to a surface of the semiconductor substrate. ### Claim 17 (depends on 16) The image sensor of claim 16, wherein, the first photoelectric conversion region vertically overlaps with one of the first photo-sensing device and the second photo-sensing device, and the second photoelectric conversion region vertically overlaps with another one of the first photo-sensing device and the second photo-sensing device. ### Claim 18 (depends on 15) The image sensor of claim 15, wherein the first photo-sensing device and the second photo-sensing device vertically overlap with each other in a thickness direction of the semiconductor substrate. ### Claim 19 (depends on 1) An electronic device including the image sensor of claim 1. ### Claim 20 An image sensor, comprising a first photoelectric conversion region that includes a first pixel electrode, a first portion of a light absorption layer on the first pixel electrode, and a first portion of a common electrode on the first portion of the light absorption layer, wherein the first photoelectric conversion region is associated with a first photoelectric sensitivity; and a second photoelectric conversion region that includes a second pixel electrode, a second portion of the light absorption layer on the second pixel electrode, and a second portion of the common electrode on the second portion of the light absorption layer, wherein the second photoelectric conversion region is associated with a second photoelectric sensitivity, and the second photoelectric sensitivity is different than the first photoelectric sensitivity. ### Claim 21 (depends on 20) The image sensor of claim 20, wherein, the second photoelectric conversion region includes a charge control layer between the second pixel electrode and the second portion of the light absorption layer, and the charge control layer is configured to reduce charge mobility from the light absorption layer to the second pixel electrode. ### Claim 22 (depends on 20) The image sensor of claim 20, further comprising: a planarization layer between the first pixel electrode and the second pixel electrode and between the second pixel electrode and the second portion of the light absorption layer. ### Claim 23 (depends on 20) The image sensor of claim 20, wherein, the first pixel electrode has a lower sheet resistance than the second pixel electrode. ### Claim 24 (depends on 20) The image sensor of claim 20, wherein the first pixel electrode and the second pixel electrode have different areas, respectively. ### Claim 25 (depends on 20) The image sensor of claim 20, further comprising: a semiconductor substrate that includes, a first photo-sensing device that vertically overlaps the first photoelectric conversion region, and a second photo-sensing device that vertically overlaps the second photoelectric conversion region. ### Claim 26 (depends on 25) The image sensor of claim 25, wherein the first photo-sensing device and the second photo-sensing device are configured to sense different wavelength spectra of light. ### Claim 27 (depends on 20) The image sensor of claim 20, further comprising: a semiconductor substrate that includes, a first photo-sensing device that vertically overlaps the first photoelectric conversion region, and a second photo-sensing device that vertically overlaps the first photo-sensing device. ### Claim 28 (depends on 20) An electronic device including the image sensor of claim 20. ### Claim 29 A photoelectric conversion device, comprising: first and second pixel electrodes; a light absorption layer on the first and second pixel electrodes; a common electrode on the light absorption layer; and a charge control layer between the second pixel electrode and the light absorption layer, wherein the charge control layer is not between the first pixel electrode and the light absorption layer. ### Claim 30 (depends on 29) The photoelectric conversion device of claim 29, wherein the charge control layer includes at least one through-hole between the second pixel electrode and the light absorption layer. ### Claim 31 (depends on 29) An electronic device including the photoelectric conversion device of claim 29.