# US 2017/0287958 A1 · Solid-state image pickup apparatus and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287958 A1 - Document ID: US20170287958A1 - Status: Published application - Kind: A1 - Application number: 15/511,548 - Filed: 2015-09-14 - Published: 2017-10-05 - Earliest claimed: 2014-09-26 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Hiroyuki OHRI - Web page: https://patentgrep.com/patent/US20170287958A1 ## CPC - H10F 39/80373: {characterised by the gate of the transistor} - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/811: {Interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract The present disclosure relates to a solid-state image pickup apparatus and an electronic apparatus capable of preventing charges accumulated in a PD from being lost and suppressing reductions of an S/N and a dynamic range. The apparatus according to an embodiment of the present disclosure includes: a photoelectric conversion unit; a first holding unit that holds the charge transferred from the photoelectric conversion unit; a first transfer gate unit that controls the transfer of the charge; a charge drain unit that is a drain destination of the charge generated by the photoelectric conversion unit; a first drain gate unit that controls the transfer of the charge from the photoelectric conversion unit to the charge drain unit; and a second drain gate unit that connects the charge drain unit with a constant voltage source. The present disclosure can be applied to a CIS and an electronic apparatus provided with the CIS. ## Claims ### Claim 1 A solid-state image pickup apparatus, comprising: a photoelectric conversion unit that generates a charge depending on incident light; a first holding unit that holds the charge transferred from the photoelectric conversion unit; a first transfer gate unit that controls the transfer of the charge from the photoelectric conversion unit to the first holding unit; a charge drain unit that is a drain destination of the charge generated by the photoelectric conversion unit; a first drain gate unit that controls the transfer of the charge from the photoelectric conversion unit to the charge drain unit; and a second drain gate unit that connects the charge drain unit with a constant voltage source. ### Claim 2 (depends on 1) The solid-state image pickup apparatus according to claim 1, further comprising: a second holding unit that holds the charge transferred from the photoelectric conversion unit between the photoelectric conversion unit and the first holding unit; and a second transfer gate unit that controls the transfer of the charge from the photoelectric conversion unit to the second holding unit. ### Claim 3 (depends on 2) The solid-state image pickup apparatus according to claim 2, wherein the second transfer gate unit is constituted of one or more gates. ### Claim 4 (depends on 2) The solid-state image pickup apparatus according to claim 2, wherein the second drain gate unit is formed in an area different from a pixel portion. ### Claim 5 (depends on 2) The solid-state image pickup apparatus according to claim 2, wherein the second drain gate unit is formed in a wiring layer. ### Claim 6 (depends on 5) The solid-state image pickup apparatus according to claim 5, wherein the second drain gate unit is formed in the wiring layer as a transistor of an oxide semiconductor. ### Claim 7 (depends on 2) The solid-state image pickup apparatus according to claim 2, wherein the second drain gate unit has a gate voltage in an exposure time of the photoelectric conversion unit which is set to a value between a negative voltage in a non-conduction state and a power supply voltage in a conduction state. ### Claim 8 (depends on 2) The solid-state image pickup apparatus according to claim 2, wherein the second drain gate unit has a drain voltage in an exposure time of the photoelectric conversion unit which is set to a value between 0 V and a power supply voltage in a conduction state. ### Claim 9 (depends on 2) The solid-state image pickup apparatus according to claim 2, the solid-state image pickup apparatus being a front-surface irradiation type. ### Claim 10 (depends on 2) The solid-state image pickup apparatus according to claim 2, the solid-state image pickup apparatus being a back-surface irradiation type. ### Claim 11 (depends on 2) The solid-state image pickup apparatus according to claim 2, the solid-state image pickup apparatus being a lamination type. ### Claim 12 An electronic apparatus on which a solid-state image pickup apparatus is mounted, the solid-state image pickup apparatus including a photoelectric conversion unit that generates a charge depending on incident light, a first holding unit that holds the charge transferred from the photoelectric conversion unit, a first transfer gate unit that controls the transfer of the charge from the photoelectric conversion unit to the first holding unit, a charge drain unit that is a drain destination of the charge generated by the photoelectric conversion unit, a first drain gate unit that controls the transfer of the charge from the photoelectric conversion unit to the charge drain unit, and a second drain gate unit that connects the charge drain unit with a constant voltage source.