# US 2017/0287948 A1 · Display substrate, manufacturing method therefor and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287948 A1 - Document ID: US20170287948A1 - Status: Published application - Kind: A1 - Application number: 15/514,328 - Filed: 2016-02-19 - Published: 2017-10-05 - Earliest claimed: 2015-03-27 - Assignees: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd. - Applicants: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd. - Inventors: Bo FENG; Qing MIAO; Yu MA - Web page: https://patentgrep.com/patent/US20170287948A1 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/13458: {Terminal pads} - G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/6729: {characterised by the electrodes} - H10D 86/0212: {comprising manufacture, treatment or coating of substrates} - H10D 86/443: {adapted for preventing breakage, peeling or short circuiting} - G02F 2201/123: pixel - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract Provided is a display substrate. The display substrate includes a base substrate and a thin film transistor which is formed on the base substrate, wherein the thin film transistor includes a drain electrode, and at least one pad structure is arranged on an outer side of the drain electrode; a vertical distance between a top surface of the pad structure and the base substrate is less than the vertical distance between the top surface of the drain electrode and the base substrate, and is greater than the vertical distance between the top surface of the substrate, which is located on one side of the pad structure is far away from the drain electrode, and the base substrate. Further provided are a manufacturing method for the display substrate and a display device. ## Claims ### Claim 1 A display substrate, comprising: a base substrate and a thin film transistor formed on the base substrate; the thin film transistor comprises a drain; wherein at least one pad structure is disposed on an outer side of the drain; a vertical distance between a top surface of the at least one pad structure and the base substrate is less than a vertical distance between a top surface of the drain and the base substrate and greater than a vertical distance between the base substrate and a top surface of the substrate which is located on a side of the at least one pad structure away from the drain. ### Claim 2 (depends on 1) The display substrate according to claim 1, wherein the at least one pad structure comprises a first pad structure and a second pad structure disposed sequentially in a direction away from the drain, a vertical distance between a top surface of the second pad structure and the base substrate is less than a vertical distance between a top surface of the first pad structure and the base substrate. ### Claim 3 (depends on 2) The display substrate according to claim 2, wherein the at least one pad structure comprises a pad. ### Claim 4 (depends on 3) The display substrate according to claim 3, wherein the pad comprises a first pad and a second pad which are connected to each other; the thin film transistor comprises a gate insulation layer, an active layer, a source and a drain disposed in the same layer, which are sequentially formed on the base substrate; the first pad structure comprises the first pad, the gate insulation layer and the active layer which are disposed in a region of the first pad structure; the second pad structure comprises the second pad and the gate insulation layer which are disposed in a region of the second pad structure. ### Claim 5 (depends on 3) The display substrate according to claim 3, wherein the thin film transistor comprises a gate insulation layer, an active layer, a source and a drain disposed in the same layer, which are sequentially formed on the base substrate; the first pad structure comprises the gate insulation layer and the active layer which are disposed in a region of the first pad structure; the second pad structure comprises the pad and the gate insulation layer which are disposed in a region of the second pad structure. ### Claim 6 (depends on 4) The display substrate according to claim 4, wherein the thin film transistor further comprises a gate disposed between the gate insulation layer and the base substrate; the pad is disposed in the same layer as the gate, and a material of the pad is the same as that of the gate. ### Claim 7 (depends on 6) The display substrate according to claim 6, wherein a thickness of the pad is equal to or less than a thickness of the gate. ### Claim 8 (depends on 6) The display substrate according to claim 6, wherein the at least one pad structure is disposed on the base substrate. ### Claim 9 (depends on 1) A display device, comprising the display substrate according to claim 1. ### Claim 10 A method for manufacturing a display substrate, comprising: forming a thin film transistor and at least one pad structure on a base substrate; wherein, the at least one pad structure is disposed on an outer side of a drain of the thin film transistor; a vertical distance between a top surface of the pad structure and the base substrate is less than a vertical distance between a top surface of the drain and the base substrate and greater than a vertical distance between the base substrate and a top surface of the substrate which is located on a side of the pad structure away from the drain. ### Claim 11 (depends on 10) The method for manufacturing the display substrate according to claim 10, wherein the step of forming the thin film transistor and at least one pad structure on the base substrate comprises: forming a gate metal layer on the base substrate, and forming patterns of a gate and a pad through a single patterning process; forming a gate insulation layer on the base substrate on which the gate and the pad are formed, so as to form a second pad structure; forming an active material layer and a source-drain metal layer on the base substrate on which the gate insulation layer is formed, forming patterns of an active layer, a source and a drain through a single patterning process, so as to form a first pad structure and the thin film transistor. ### Claim 12 (depends on 5) The display substrate according to claim 5, wherein the thin film transistor further comprises a gate disposed between the gate insulation layer and the base substrate; the pad is disposed in the same layer as the gate, and a material of the pad is the same as that of the gate. ### Claim 13 (depends on 9) The display device according to claim 9, wherein the at least one pad structure comprises a first pad structure and a second pad structure disposed sequentially in a direction away from the drain, a vertical distance between a top surface of the second pad structure and the base substrate is less than a vertical distance between a top surface of the first pad structure and the base substrate. ### Claim 14 (depends on 13) The display device according to claim 13, wherein the at least one pad structure comprises a pad. ### Claim 15 (depends on 14) The display device according to claim 14, wherein the pad comprises a first pad and a second pad which are connected to each other; the thin film transistor comprises a gate insulation layer, an active layer, a source and a drain disposed in the same layer, which are sequentially formed on the base substrate; the first pad structure comprises the first pad, the gate insulation layer and the active layer which are disposed in a region of the first pad structure; the second pad structure comprises the second pad and the gate insulation layer which are disposed in a region of the second pad structure. ### Claim 16 (depends on 14) The display device according to claim 14, wherein the thin film transistor comprises a gate insulation layer, an active layer, a source and a drain disposed in the same layer, which are sequentially formed on the base substrate; the first pad structure comprises the gate insulation layer and the active layer which are disposed in a region of the first pad structure; the second pad structure comprises the pad and the gate insulation layer which are disposed in a region of the second pad structure. ### Claim 17 (depends on 15) The display device according to claim 15, wherein the thin film transistor further comprises a gate disposed between the gate insulation layer and the base substrate; the pad is disposed in the same layer as the gate, and a material of the pad is the same as that of the gate. ### Claim 18 (depends on 16) The display device according to claim 16, wherein the thin film transistor further comprises a gate disposed between the gate insulation layer and the base substrate; the pad is disposed in the same layer as the gate, and a material of the pad is the same as that of the gate. ### Claim 19 (depends on 17) The display device according to claim 17, wherein a thickness of the pad is equal to or less than a thickness of the gate. ### Claim 20 (depends on 17) The display device according to claim 17, wherein the at least one pad structure is disposed on the base substrate.