# US 2017/0287946 A1 · Semiconductor device and active matrix substrate using semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287946 A1 - Document ID: US20170287946A1 - Status: Published application - Kind: A1 - Application number: 15/466,827 - Filed: 2017-03-22 - Published: 2017-10-05 - Earliest claimed: 2016-04-01 - Assignees: Joled Inc. - Applicants: JOLED Inc. - Inventors: Yasunobu HIROMASU; Motohiro TOYOTA; Shinichi USHIKURA - Web page: https://patentgrep.com/patent/US20170287946A1 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - H10D 86/0212: {comprising manufacture, treatment or coating of substrates} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 89/811: {using FETs as protective elements} - H10D 30/6736: {characterised by the shape of gate insulators} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/1216: {the pixel elements being capacitors} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area. ## Claims ### Claim 1 A semiconductor device comprising: an insulating substrate including a pixel area and a peripheral circuit area around the pixel area; a first insulating layer which is provided on the insulating substrate and includes at least nitrogen; a second insulating layer at least provided on the first insulating layer in the peripheral circuit area; a first thin-film transistor which is provided above the first insulating layer in the pixel area and comprises a first oxide semiconductor layer; and a second thin-film transistor which is provided on the second insulating layer in the peripheral circuit area and comprises a second oxide semiconductor layer, wherein the second insulating layer in the pixel area is thinner than that in the peripheral circuit area. ### Claim 2 (depends on 1) The device of claim 1, wherein the first insulating layer is uniform in the pixel area and the peripheral circuit area. ### Claim 3 A semiconductor device comprising: an insulating substrate including a pixel area and a peripheral circuit area around the pixel area; a first insulating layer which is provided on the insulating substrate and includes at least nitrogen.; a second insulating layer provided on the first insulating layer; a first thin-film transistor which is provided on the second insulating layer in the pixel area and comprises a first oxide semiconductor layer; and a second thin-film transistor which is provided on the second insulating layer in the peripheral circuit area and comprises a second oxide semiconductor layer, wherein the first insulating layer in the pixel area is thicker than that in the peripheral circuit area. ### Claim 4 (depends on 3) The device of claim 3, wherein the second insulating layer is uniform in the pixel area and the peripheral circuit area. ### Claim 5 (depends on 1) The device of claim 1, wherein threshold voltage of the first thin-film transistor is lower than threshold voltage of the second thin-film transistor. ### Claim 6 (depends on 1) The device of claim 1, wherein the first insulating layer is one of a silicon nitride layer and a silicon oxynitride layer. ### Claim 7 (depends on 1) The device of claim 1, wherein the first thin-film transistor is one of a write transistor, a drive transistor and a reset transistor included in a pixel arranged in the pixel area. ### Claim 8 (depends on 7) The device of claim 7, wherein the second thin-film transistor is a protective transistor which protects the pixel area from electro-static discharge or an inspection transistor which inspects the pixel area. ### Claim 9 (depends on 1) The device of claim 1, including an organic electroluminescence display device, a liquid crystal display device or an imaging device. ### Claim 10 (depends on 1) An active matrix substrate using the device of claim 1. ### Claim 11 A semiconductor device comprising: an insulating substrate; a first insulating layer which is provided on the insulating substrate and includes at least nitrogen; a thin-film transistor which is provided above the first insulating layer and comprises a first oxide semiconductor layer; a capacitor which is provided above the first insulating layer and comprises a second oxide semiconductor layer; and a second insulating layer at least provided between the first insulating layer and the first oxide semiconductor layer of the thin-film transistor. ### Claim 12 (depends on 11) The device of claim 11, wherein the first insulating layer is uniform under the first oxide semiconductor layer and the second oxide semiconductor layer, and the second insulating layer under the first oxide semiconductor layer is thicker than that under the second oxide semiconductor layer. ### Claim 13 A semiconductor device comprising: an insulating substrate; a first insulating layer which is provided on the insulating substrate and includes at least nitrogen; a second insulating layer provided on the first insulating layer; a thin-film transistor which is provided on the second insulating layer and comprises a first oxide semiconductor layer; and a capacitor which is provided on the second insulating layer and comprises a second oxide semiconductor layer, wherein the first insulating layer under the first oxide semiconductor layer is thinner than that under the second oxide semiconductor layer. ### Claim 14 (depends on 13) The device of claim 13, wherein the second insulating layer is uniform under the first oxide semiconductor layer and the second oxide semiconductor layer. ### Claim 15 (depends on 11) The device of claim 11, wherein electrical resistance of the second oxide semiconductor layer is lower than electrical resistance of the first oxide semiconductor layer. ### Claim 16 (depends on 11) The device of claim 11, wherein the first insulating layer is one of a silicon nitride layer and a silicon oxynitride layer. ### Claim 17 (depends on 11) The device of claim 11, wherein the insulating substrate includes a pixel area, and the thin-film transistor is one of a write transistor, a drive transistor and a reset transistor included in a pixel arranged in the pixel area. ### Claim 18 (depends on 17) The device of claim 17, wherein the capacitor is a capacitance element included in the pixel arranged in the pixel area. ### Claim 19 (depends on 11) The device of claim 11, including an organic electroluminescence display device, a liquid crystal display device or an imaging device. ### Claim 20 (depends on 11) An active matrix substrate using the device of claim 11.