# US 2017/0287940 A1 · Device, manufacturing method thereof, and electronic device

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- Number: US 2017/0287940 A1
- Document ID: US20170287940A1
- Status: Published application
- Kind: A1
- Application number: 15/622,255
- Filed: 2017-06-14
- Published: 2017-10-05
- Earliest claimed: 2015-02-06
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Hidekazu MIYAIRI; Tomoaki MORIWAKA
- Web page: https://patentgrep.com/patent/US20170287940A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.

## Claims

### Claim 1

A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate;
forming a second insulating film over the first insulating film;
removing part of the first insulating film and first part of the second insulating film to form a first opening;
forming a first conductor in the first opening and over a top surface of the second insulating film;
forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor;
forming a third insulating film over the second insulating film and the second conductor;
removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor;
forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and
removing part of the third conductor to form a fourth conductor.

### Claim 2

A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate;
forming a second insulating film over the first insulating film;
removing part of the first insulating film and first part of the second insulating film to form a first opening;
forming a first conductor in the first opening and over a top surface of the second insulating film;
removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening;
forming a third insulating film over the second insulating film and the second conductor;
removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor;
forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and
removing part of the third conductor to form a fourth conductor.

### Claim 3

A method for manufacturing a device, comprising the steps of:
forming a first insulating film over a substrate;
forming a second insulating film over the first insulating film;
removing part of the first insulating film and first part of the second insulating film to form a first opening;
forming a first conductor in the first opening and over a top surface of the second insulating film;
removing part of the first conductor by a chemical mechanical polishing method to make a surface of the first conductor parallel to a bottom surface of the substrate, so that a second conductor is formed in the first opening;
forming a third insulating film over the second insulating film and the second conductor;
removing second part of the second insulating film and part of the third insulating film to form a second opening so as to expose part of a top surface of the second conductor and part of a side surface of the second conductor;
forming a third conductor over a top surface of the third insulating film and in the second opening so as to be in contact with the second conductor; and
removing part of the third conductor by a chemical mechanical polishing method to make a surface of the third conductor parallel to the bottom surface of the substrate, so that a fourth conductor is formed in the second opening.

### Claim 4 (depends on 1)

The method for manufacturing a device according to claim 1, comprising the step of forming an element over the fourth conductor,
wherein the element comprises an oxide semiconductor.

### Claim 5 (depends on 1)

The method for manufacturing a device according to claim 1,
wherein the second insulating film comprises aluminum,
wherein the first insulating film comprises silicon.

### Claim 6 (depends on 1)

The method for manufacturing a device according to claim 1,
wherein the second insulating film has a lower hydrogen-transmitting property than the first insulating film.

### Claim 7 (depends on 2)

The method for manufacturing a device according to claim 2, comprising the step of forming an element over the fourth conductor,
wherein the element comprises an oxide semiconductor.

### Claim 8 (depends on 2)

The method for manufacturing a device according to claim 2,
wherein the second insulating film comprises aluminum,
wherein the first insulating film comprises silicon.

### Claim 9 (depends on 2)

The method for manufacturing a device according to claim 2,
wherein the second insulating film has a lower hydrogen-transmitting property than the first insulating film.

### Claim 10 (depends on 3)

The method for manufacturing a device according to claim 3, comprising the step of forming an element over the fourth conductor,
wherein the element comprises an oxide semiconductor.

### Claim 11 (depends on 3)

The method for manufacturing a device according to claim 3,
wherein the second insulating film comprises aluminum,
wherein the first insulating film comprises silicon.

### Claim 12 (depends on 3)

The method for manufacturing a device according to claim 3,
wherein the second insulating film has a lower hydrogen-transmitting property than the first insulating film.