# US 2017/0287933 A1 · Metal oxide semiconductor cell device architecture with mixed diffusion break isolation trenches

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- Number: US 2017/0287933 A1
- Document ID: US20170287933A1
- Status: Published application
- Kind: A1
- Application number: 15/264,560
- Filed: 2016-09-13
- Published: 2017-10-05
- Earliest claimed: 2016-03-31
- Assignees: QUALCOMM Incorporated
- Applicants: QUALCOMM Incorporated
- Inventors: Xiangdong CHEN; Venugopal BOYNAPALLI; Satyanarayana SAHU; Hyeokjin LIM; Mukul GUPTA
- Web page: https://patentgrep.com/patent/US20170287933A1

## CPC

- H10D 84/907: {CMOS gate arrays}
- H10D 62/113: {Isolations within a component, i.e. internal isolations}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 89/10: Integrated device layouts
- H10D 84/929: {Isolations}
- H10D 84/966: {Gate electrode terminals or contacts}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A standard cell IC includes pMOS transistors in a pMOS region of a MOS device. The pMOS region extends between a first cell edge and a second cell edge opposite the first cell edge. The standard cell IC further includes nMOS transistors in an nMOS region of the MOS device. The nMOS region extends between the first cell edge and the second cell edge. The standard cell IC further includes at least one single diffusion break located in an interior region between the first cell edge and the second cell edge that extends across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions. The standard cell IC includes a first double diffusion break portion at the first cell edge. The standard cell IC further includes a second double diffusion break portion at the second cell edge.

## Claims

### Claim 1

A standard cell integrated circuit, comprising:
a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge;
at least one single diffusion break located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions;
a first double diffusion break portion extending at the first cell edge; and
a second double diffusion break portion extending at the second cell edge.

### Claim 2 (depends on 1)

The standard cell integrated circuit of claim 1, wherein the standard cell integrated circuit has n grids with pitch p between the grids, and a width of approximately n*p, the grids extending across the pMOS region and the nMOS region, and wherein:
each of the at least one single diffusion break extends along a different one of the n grids located in the interior region,
the first double diffusion break portion extends along the first cell edge between the first cell edge and a first grid located approximately p/2 from the first cell edge, and
the second double diffusion break portion extends along the second cell edge between the second cell edge and a second grid located approximately p/2 from the second cell edge.

### Claim 3 (depends on 2)

The standard cell integrated circuit of claim 2, wherein gate interconnects for the pMOS transistors and the nMOS transistors extend along a subset of the n grids.

### Claim 4 (depends on 3)

The standard cell integrated circuit of claim 3, wherein the gate interconnects have a width g, each of the at least one single diffusion break has a width of approximately g, and each of the first double diffusion break portion and the second double diffusion break portion has a width of approximately p/2, where p is greater than g.

### Claim 5 (depends on 1)

The standard cell integrated circuit of claim 1, wherein each of the at least one single diffusion break, the first double diffusion break portion, and the second double diffusion break portion comprises a shallow trench isolation (STI) region.

### Claim 6 (depends on 5)

The standard cell integrated circuit of claim 5, wherein a depth of each STI region of the first double diffusion break portion and the second double diffusion break portion is greater than a depth of each STI region of the at least one single diffusion break.

### Claim 7 (depends on 1)

The standard cell integrated circuit of claim 1, wherein each of the first double diffusion break portion and the second double diffusion break portion is approximately half of a width of a full double diffusion break.

### Claim 8 (depends on 1)

The standard cell integrated circuit of claim 1, wherein the plurality of pMOS transistors include a first subset of pMOS transistors and a second subset of pMOS transistors, the plurality of nMOS transistors include a first subset of nMOS transistors and a second subset of nMOS transistors, the first subset of pMOS transistors and the first subset of nMOS transistors provide first logic functionality, the second subset of pMOS transistors and the second subset of nMOS transistors provide second logic functionality, the first functionality and the second functionality are separated by an internal node, and one single diffusion break of the at the least one single diffusion break isolates diffusion regions for the first logic functionality and the second logic functionality at the internal node.

### Claim 9 (depends on 8)

The standard cell integrated circuit of claim 8, wherein the first logic functionality outputs to the second logic functionality, the second logic functionality has an output node, and the output node is adjacent one of the first cell edge or the second cell edge.

### Claim 10

A standard cell integrated circuit, comprising:
a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge,
a first means for isolating diffusion regions located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region, the first means for isolating diffusion regions being configured to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions, a width of the first means for isolating diffusion regions being approximately g;
a second means for isolating diffusion regions extending at the first cell edge, a width of the second means for isolating diffusion regions being approximately p/2, p being greater than g; and
a third means for isolating diffusion regions extending at the second cell edge, a width of the third means for isolating diffusion regions being approximately p/2.

### Claim 11 (depends on 10)

The standard cell integrated circuit of claim 10, wherein:
the first means for isolating diffusion regions is at least one single diffusion break located in the interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into the pMOS subregions and the nMOS region into the nMOS subregions;
the second means for isolating diffusion regions is a first double diffusion break portion extending at the first cell edge; and
the third means for isolating diffusion regions is a second double diffusion break portion extending at the second cell edge.

### Claim 12 (depends on 11)

The standard cell integrated circuit of claim 11, wherein the standard cell integrated circuit has n grids with pitch p between the grids, and a width of approximately n*p, the grids extending across the pMOS region and the nMOS region, and wherein:
each of the at least one single diffusion break extends along a different one of the n grids located in the interior region,
the first double diffusion break portion extends along the first cell edge between the first cell edge and a first grid located approximately p/2 from the first cell edge, and
the second double diffusion break portion extends along the second cell edge between the second cell edge and a second grid located approximately p/2 from the second cell edge.

### Claim 13 (depends on 12)

The standard cell integrated circuit of claim 12, wherein gate interconnects for the pMOS transistors and the nMOS transistors extend along a subset of the n grids.

### Claim 14 (depends on 13)

The standard cell integrated circuit of claim 13, wherein the gate interconnects have a width g.

### Claim 15 (depends on 11)

The standard cell integrated circuit of claim 11, wherein each of the at least one single diffusion break, the first double diffusion break portion, and the second double diffusion break portion comprises a shallow trench isolation (STI) region.

### Claim 16 (depends on 15)

The standard cell integrated circuit of claim 15, wherein a depth of each STI region of the first double diffusion break portion and the second double diffusion break portion is greater than a depth of each STI region of the at least one single diffusion break.

### Claim 17 (depends on 11)

The standard cell integrated circuit of claim 11, wherein each of the first double diffusion break portion and the second double diffusion break portion is approximately half of a width of a full double diffusion break.

### Claim 18 (depends on 11)

The standard cell integrated circuit of claim 11, wherein the plurality of pMOS transistors include a first subset of pMOS transistors and a second subset of pMOS transistors, the plurality of nMOS transistors include a first subset of nMOS transistors and a second subset of nMOS transistors, the first subset of pMOS transistors and the first subset of nMOS transistors provide first logic functionality, the second subset of pMOS transistors and the second subset of nMOS transistors provide second logic functionality, the first functionality and the second functionality are separated by an internal node, and one single diffusion break of the at the least one single diffusion break isolates diffusion regions for the first logic functionality and the second logic functionality at the internal node.

### Claim 19 (depends on 18)

The standard cell integrated circuit of claim 18, wherein the first logic functionality outputs to the second logic functionality, the second logic functionality has an output node, and the output node is adjacent one of the first cell edge or the second cell edge.

### Claim 20

A standard cell integrated circuit, comprising:
a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge,
wherein the standard cell integrated circuit includes:
means for providing at least one diffusion break located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions;
means for providing a first diffusion break portion extending at the first cell edge, the means for providing the first diffusion break portion having a greater depth than the means for providing the at least one diffusion break; and
means for providing a second diffusion break portion extending at the second cell edge, the means for providing the second diffusion break portion having a greater depth than the means for providing the at least one diffusion break.

### Claim 21 (depends on 20)

The standard cell integrated circuit of claim 20, wherein the means for providing the at least one diffusion break comprises at least one single diffusion break, the means for providing the first diffusion break portion comprises a first double diffusion break portion, and the means for providing the second diffusion break portion comprises a second double diffusion break portion.

### Claim 22 (depends on 21)

The standard cell integrated circuit of claim 21, wherein the standard cell integrated circuit has n grids with pitch p between the grids, and a width of approximately n*p, the grids extending across the pMOS region and the nMOS region, and wherein:
each of the at least one single diffusion break extends along a different one of the n grids located in the interior region,
the first double diffusion break portion extends along the first cell edge between the first cell edge and a first grid located approximately p/2 from the first cell edge, and
the second double diffusion break portion extends along the second cell edge between the second cell edge and a second grid located approximately p/2 from the second cell edge.

### Claim 23 (depends on 22)

The standard cell integrated circuit of claim 22, wherein gate interconnects for the pMOS transistors and the nMOS transistors extend along a subset of the n grids.

### Claim 24 (depends on 23)

The standard cell integrated circuit of claim 23, wherein the gate interconnects have a width g, each of the at least one single diffusion break has a width of approximately g, and each of the first double diffusion break portion and the second double diffusion break portion has a width of approximately p/2, where p is greater than g.

### Claim 25 (depends on 21)

The standard cell integrated circuit of claim 21, wherein each of the at least one single diffusion break, the first double diffusion break portion, and the second double diffusion break portion comprises a shallow trench isolation (STI) region.

### Claim 26 (depends on 25)

The standard cell integrated circuit of claim 25, wherein a depth of each STI region of the first double diffusion break portion and the second double diffusion break portion is greater than a depth of each STI region of the at least one single diffusion break.

### Claim 27 (depends on 21)

The standard cell integrated circuit of claim 21, wherein each of the first double diffusion break portion and the second double diffusion break portion is approximately half of a width of a full double diffusion break.

### Claim 28 (depends on 21)

The standard cell integrated circuit of claim 21, wherein the plurality of pMOS transistors include a first subset of pMOS transistors and a second subset of pMOS transistors, the plurality of nMOS transistors include a first subset of nMOS transistors and a second subset of nMOS transistors, the first subset of pMOS transistors and the first subset of nMOS transistors provide first logic functionality, the second subset of pMOS transistors and the second subset of nMOS transistors provide second logic functionality, the first functionality and the second functionality are separated by an internal node, and one single diffusion break of the at the least one single diffusion break isolates diffusion regions for the first logic functionality and the second logic functionality at the internal node.

### Claim 29 (depends on 28)

The standard cell integrated circuit of claim 28, wherein the first logic functionality outputs to the second logic functionality, the second logic functionality has an output node, and the output node is adjacent one of the first cell edge or the second cell edge.

### Claim 30

An operating method of a standard cell integrated circuit, comprising:
operating a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
operating a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge,
wherein the standard cell integrated circuit includes:
at least one single diffusion break located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions;
a first double diffusion break portion extending at the first cell edge; and
a second double diffusion break portion extending at the second cell edge.