# US 2017/0287930 A1 · Three-dimensional semiconductor device

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- Number: US 2017/0287930 A1
- Document ID: US20170287930A1
- Status: Published application
- Kind: A1
- Application number: 15/593,494
- Filed: 2017-05-12
- Published: 2017-10-05
- Earliest claimed: 2015-09-18
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Changhyun LEE; Heonkyu LEE; Shinhwan KANG; Youngwoo PARK
- Web page: https://patentgrep.com/patent/US20170287930A1

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 43/10: characterised by the top-view layout
- H10B 43/30: characterised by the memory core region
- H10B 43/35: with cell select transistors, e.g. NAND
- H10B 43/40: characterised by the peripheral circuit region
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A three-dimensional (3D) semiconductor device includes a stack structure including electrodes vertically stacked on a substrate, a channel structure coupled to the electrodes to constitute a plurality of memory cells three-dimensionally arranged on the substrate, the channel structure including first vertical channels and second vertical channels penetrating the stack structure and a first horizontal channel disposed under the stack structure to laterally connect the first vertical channels and the second vertical channels to each other, a second horizontal channel having a first conductivity type and connected to a sidewall of the first horizontal channel of the channel structure, and conductive plugs having a second conductivity type and disposed on top ends of the second vertical channels.

## Claims

### Claim 1

A three-dimensional (3D) semiconductor device comprising:
a plurality of stack structures that extend in a first direction and that are spaced apart from each other in a second direction, each of the plurality of stack structures comprising electrodes that are vertically stacked on a substrate;
first vertical channels and second vertical channels that penetrate each of the stack structures;
a first horizontal channel that extends in the first direction under each of the stack structures, wherein the first horizontal channel connects the first vertical channels and the second vertical channels to each other;
second horizontal channels that are in contact with both sidewalls of the first horizontal channel, wherein each of the second horizontal channels extends in the first direction and is between the stack structures that are adjacent one another when viewed from a plan view;
a conductive line that extends in the first direction on each of the stack structures and that is connected to the second vertical channels; and
a bit line that extends in the second direction on the conductive line and that is connected to the first vertical channels.

### Claim 2 (depends on 1)

The 3D semiconductor device of claim 1, wherein the second horizontal channels are doped with dopants of a first conductivity type, and
wherein at least top end portions of the second vertical channels are doped with dopants of a second conductivity type that is different from the first conductivity type.

### Claim 3 (depends on 1)

The 3D semiconductor device of claim 1, further comprising:
source plugs that are on top ends of the second vertical channels,
wherein the source plugs have a conductivity type opposite to a conductivity type of the second horizontal channel, and
wherein bottom surfaces of the source plugs are lower than a bottom surface of an uppermost one of the electrodes.

### Claim 4 (depends on 1)

The 3D semiconductor device of claim 1, wherein the first horizontal channel overlaps with each of the stack structures when viewed from a plan view.

### Claim 5 (depends on 1)

The 3D semiconductor device of claim 1, wherein a width of each of the second horizontal channels is greater than a distance between the stack structures that are adjacent one another.

### Claim 6 (depends on 1)

The 3D semiconductor device of claim 1, wherein the first vertical channels are arranged along the first direction and the second direction, and
wherein the first horizontal channel is connected in common to the first vertical channels that are arranged along the first direction and the first vertical channels that are arranged along the second direction.

### Claim 7 (depends on 1)

The 3D semiconductor device of claim 1, further comprising:
a filling insulation layer that fills spaces between the stack structures,
wherein top surfaces of the second horizontal channels are in contact with the filling insulation layer.

### Claim 8 (depends on 1)

The 3D semiconductor device of claim 1, further comprising:
a filling insulation layer that fills spaces between the stack structures,
wherein the filling insulation layer penetrates the second horizontal channels so as to be in contact with the substrate.

### Claim 9

A three-dimensional (3D) semiconductor device comprising:
a first horizontal channel that extends in a first direction on a substrate;
second horizontal channels that extend in the first direction at both sides of the first horizontal channel, that are in contact with both sidewalls of the first horizontal channel, and that have a first conductivity type;
a stack structure that extends in the first direction, the stack structure comprising a plurality of electrodes that are vertically stacked on the first horizontal channel;
first vertical channels and second vertical channels that penetrate the stack structure and that are connected to the first horizontal channel; and
conductive plugs that are on top ends of the second vertical channels and that have a second conductivity type that is different from the first conductivity type.

### Claim 10 (depends on 9)

The 3D semiconductor device of claim 9, wherein the first horizontal channel has rounded sidewalls that are in contact with the second horizontal channels, respectively.

### Claim 11 (depends on 9)

The 3D semiconductor device of claim 9, wherein the second vertical channels are spaced apart from each other and are arranged along the first direction, and
wherein the first vertical channels are spaced apart from each other and are arranged along the first direction and a second direction perpendicular to the first direction.

### Claim 12 (depends on 9)

The 3D semiconductor device of claim 9, further comprising:
a conductive line that extends in the first direction on the stack structure and that is connected in common to the second vertical channels that are arranged along the first direction.

### Claim 13 (depends on 12)

The 3D semiconductor device of claim 12, further comprising:
a bit line that extends in a second direction to intersect the conductive line and that is connected to the first vertical channels that are arranged along the second direction.

### Claim 14 (depends on 9)

The 3D semiconductor device of claim 9, wherein bottom surfaces of the conductive plugs are lower than a bottom surface of an uppermost one of the electrodes.

### Claim 15 (depends on 9)

The 3D semiconductor device of claim 9, further comprising:
conductive pads that are on top ends of the first vertical channels, respectively,
wherein the conductive pads have the second conductivity type, and
wherein bottom surfaces of the conductive pads are higher than a top surface of an uppermost one of the electrodes.