# US 2017/0287841 A1 · Through via structure for step coverage improvement

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- Number: US 2017/0287841 A1
- Document ID: US20170287841A1
- Status: Published application
- Kind: A1
- Application number: 15/628,902
- Filed: 2017-06-21
- Published: 2017-10-05
- Earliest claimed: 2015-08-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Li-Yen FANG; Jung-Chih TSAO; Yao-Hsiang LIANG; Yu-Ku LIN
- Web page: https://patentgrep.com/patent/US20170287841A1

## CPC

- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/035: {combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/082: {the openings being tapered via holes}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/43: Layouts of interconnections
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 20/48: Insulating materials thereof
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a dielectric structure disposed over the substrate, wherein the dielectric structure has a through via hole passing through the dielectric structure, the through via hole comprises a bottom and a sidewall adjacent to the bottom, and the sidewall of the through via hole comprises at least one indentation structure, wherein the at least one indentation structure has a substantially C-shaped cross-section, and the at least one indentation structure has a first surface, a second surface, and a tilted surface connecting the first surface and the second surface;
a barrier layer covering the sidewall and the bottom of the through via hole;
a glue layer covering the barrier layer;
a copper seed layer covering the glue layer; and
a copper layer covering the copper seed layer and filling the through via hole.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric structure is an inter-metal dielectric layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric structure comprises a plurality of dielectric films stacked on each other, and materials of the dielectric films are not all the same.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the materials of the dielectric films are selected from a group consisting from silicon nitride, silicon carbide, silicon oxide, and combinations thereof.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the barrier layer comprises a tantalum nitride layer or a titanium nitride layer.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the glue layer comprises a cobalt layer.

### Claim 7

A semiconductor device, comprising:
a substrate;
a first dielectric layer disposed over the substrate;
a dielectric structure disposed on the first dielectric layer;
a second dielectric layer disposed on the dielectric structure, wherein a through via hole passes through the second dielectric layer, the dielectric structure, and the first dielectric layer, the through via hole comprises a bottom and a sidewall adjacent to the bottom, and the sidewall of the through via hole comprises at least one indentation structure in the dielectric structure, wherein the at least one indentation structure has a substantially C-shaped cross-section, and the at least one indentation structure has a first surface, a second surface, and a tilted surface connecting the first surface and the second surface;
a barrier layer covering the sidewall and the bottom of the through via hole;
a glue layer covering the barrier layer;
a copper seed layer covering the glue layer; and
a copper layer covering the copper seed layer and filling the through via hole.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the dielectric structure comprises a plurality of dielectric films stacked on each other, and materials of the dielectric films are not all the same.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the materials of the dielectric films are selected from a group consisting from silicon nitride, silicon carbide, silicon oxide, and combinations thereof.

### Claim 10 (depends on 7)

The semiconductor device of claim 7, wherein the first dielectric layer is formed from one single dielectric material.

### Claim 11 (depends on 7)

The semiconductor device of claim 7, wherein the second dielectric layer is formed from one single dielectric material.

### Claim 12 (depends on 7)

The semiconductor device of claim 7, wherein the barrier layer comprises a tantalum nitride layer or a titanium nitride layer.

### Claim 13 (depends on 7)

The semiconductor device of claim 7, wherein the glue layer comprises a cobalt layer.

### Claim 14

A semiconductor device, comprising:
a substrate;
a dielectric structure disposed over the substrate, wherein the dielectric structure comprises a first dielectric film, a second dielectric film, and a third dielectric film stacked in sequence, the dielectric structure has a through via hole passing through the dielectric structure, the through via hole comprises a bottom and a sidewall adjacent to the bottom, and the sidewall of the through via hole comprises a first indentation structure in the second dielectric film, wherein the first indentation structure has a substantially C-shaped cross-section, and the first indentation structure has a first surface, a second surface, and a tilted surface connecting the first surface and the second surface;
a barrier layer covering the sidewall and the bottom of the through via hole;
a glue layer covering the barrier layer;
a copper seed layer covering the glue layer; and
a copper layer covering the copper seed layer and filling the through via hole.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein materials of the first dielectric film, the second dielectric film, and the third dielectric film are not all the same.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, wherein materials of the first dielectric film, the second dielectric film, and the third dielectric film are selected from a group consisting from silicon nitride, silicon carbide, silicon oxide, and combinations thereof.

### Claim 17 (depends on 14)

The semiconductor device of claim 14, wherein the barrier layer comprises a tantalum nitride layer or a titanium nitride layer.

### Claim 18 (depends on 14)

The semiconductor device of claim 14, wherein the glue layer comprises a cobalt layer.

### Claim 19 (depends on 14)

The semiconductor device of claim 14, wherein the dielectric structure further comprises:
a fourth dielectric film disposed on the third dielectric film; and
a fifth dielectric film disposed on the fourth dielectric film, wherein the through via hole passes the fourth dielectric film and the fifth dielectric film, and the sidewall of the through via hole further comprises a second indentation in the fourth dielectric film.

### Claim 20 (depends on 19)

The semiconductor device of claim 19, wherein the second indentation structure has a substantially C-shaped cross-section, and the second indentation structure has a first surface, a second surface, and a tilted surface connecting the first surface and the second surface.