# US 2017/0287802 A1 · Semiconductor device and semiconductor apparatus

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- Number: US 2017/0287802 A1
- Document ID: US20170287802A1
- Status: Published application
- Kind: A1
- Application number: 15/430,455
- Filed: 2017-02-11
- Published: 2017-10-05
- Earliest claimed: 2016-03-31
- Assignees: Renesas Electronics Corporation
- Applicants: Renesas Electronics Corporation
- Inventors: Hideo NUMABE; Koji TATENO; Yusuke OJIMA; Yoshihiko YOKOI; Shinya ISHIDA; Hitoshi MATSUURA
- Web page: https://patentgrep.com/patent/US20170287802A1

## CPC

- H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60)
- H03K 17/16: Modifications for eliminating interference voltages or currents
- H10D 1/47: Resistors having no potential barriers
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/161: {IGBT having built-in components}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
- H10P 14/44: Physical vapour deposition [PVD]
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H10P 50/283: {by chemical means}
- H10P 50/642: {Chemical etching}
- H10W 20/427: {Power or ground buses}
- H10W 20/4451: {Semiconductor materials, e.g. polysilicon}
- H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers}
- H03K 2017/0806: {against excessive temperature}
- H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch
- H03K 2217/0063: High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
- H03K 2217/0072: Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 12/411: {Insulated-gate bipolar transistors [IGBT]}
- H10D 12/415: {having edge termination structures}
- H10D 18/00: Thyristors
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/66: Vertical DMOS [VDMOS] FETs
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

## Claims

### Claim 1

A semiconductor device comprising:
a power device; and
a temperature detection diode,
wherein the semiconductor device has a device structure configured to insulate between a power line of the power device and the temperature detection diode.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the temperature detection diode is formed over an oxide film in contact with a first conductive type layer included in the power line of the power device,
wherein the device structure comprises the oxide film having a thickness in a manner that electric field intensity over the oxide film is equal to lower than 6 MV/cm.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the device structure further comprises a ring structure between the power line of the power device and the temperature detection diode.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3,
wherein the temperature detection diode is formed over an oxide film in contact with a first conductive type layer.

### Claim 5 (depends on 3)

The semiconductor device according to claim 3,
wherein the temperature detection diode is formed inside silicon.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1,
wherein the device structure comprises a resistor between a first conductive type electrode included in the power line of the power device and a cathode electrode of the temperature detection diode.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6,
wherein the resistor has a resistance value that a leakage current is equal to or lower than 10 μA.

### Claim 8 (depends on 6)

The semiconductor device according to claim 6,
wherein the resistor is formed of polysilicon.

### Claim 9 (depends on 6)

The semiconductor device according to claim 6,
wherein the temperature detection diode is formed over an oxide film in contact with the first conductive layer.

### Claim 10 (depends on 6)

The semiconductor device according to claim 6,
wherein the temperature detection diode is formed inside silicon.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1,
wherein the temperature detection diode is arranged at an end of a semiconductor chip.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1,
wherein the temperature detection diode is arranged at center of a semiconductor chip.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1,
wherein the power device is a IGBT (Insulated Gate Bipolar Transistor), a power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), a diode, or a thyristor.

### Claim 14

A semiconductor apparatus comprising a semiconductor device, a high-side control circuit, a low-side control circuit, a high-side temperature detection circuit, a low-side temperature detection circuit, and an MCU (Micro Control Unit),
wherein the semiconductor device includes
a power device, and
a temperature detection diode, and
wherein the device has a device structure configured to insulate between a power line of the power device and the temperature detection diode.