# US 2017/0287779 A1 · Method of Forming Contact Metal

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- Number: US 2017/0287779 A1
- Document ID: US20170287779A1
- Status: Published application
- Kind: A1
- Application number: 15/628,267
- Filed: 2017-06-20
- Published: 2017-10-05
- Earliest claimed: 2016-03-08
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Chun-Hsien Huang; Hong-Mao Lee; Hsien-Lung Yang; Yu-Kai Chen; Wei-Jung Lin
- Web page: https://patentgrep.com/patent/US20170287779A1

## CPC

- H10W 20/0698: {Local interconnections}
- H10D 30/0212: {using self-aligned silicidation}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/066: {by forming silicides of refractory metals}
- H10W 20/083: {the openings being via holes penetrating underlying conductors}
- H10W 20/084: {for dual-damascene structures}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

## Claims

### Claim 1

A device comprising:
a source/drain feature disposed on a substrate;
a silicide layer disposed on the source/drain feature;
a dielectric layer disposed over the substrate;
a titanium nitride (TiN) layer extending through dielectric layer to the silicide layer; and
a metal layer extending through the dielectric layer to the TiN layer.

### Claim 2 (depends on 1)

The device of claim 1, further comprising a gate stack adjacent the source/drain feature, wherein the TiN layer is disposed over the gate stack.

### Claim 3 (depends on 2)

The device of claim 2, further comprising a sidewall spacer disposed along a sidewall of the gate stack and wherein the TiN layer physically contacts the sidewall spacer.

### Claim 4 (depends on 3)

The device of claim 3, wherein the sidewall spacer extends to the source/drain feature.

### Claim 5 (depends on 3)

The device of claim 3, wherein the sidewall spacer extends to the silicide layer.

### Claim 6 (depends on 1)

The device of claim 1, further comprising:
a first gate stack disposed on a first side of the source/drain feature;
a first sidewall spacer disposed along a first sidewall of the first gate stack;
a second gate stack disposed on a second side of the source/drain feature, the second side opposing the first side; and
a second sidewall spacer disposed along a second sidewall of the second gate stack.

### Claim 7 (depends on 6)

The device of claim 6, wherein the silicide layer extends from the first sidewall spacer to the second sidewall spacer.

### Claim 8 (depends on 6)

The device of claim 6, wherein the TiN layer extends from the first sidewall spacer to the second sidewall spacer.

### Claim 9

A device comprising:
a first gate stack and a second gate stack disposed over a substrate;
a source/drain feature disposed over the substrate between the first and second gate stacks;
a dielectric layer disposed over the substrate;
a silicide layer disposed directly on the source/drain feature;
a titanium nitride (TiN) layer extending through the dielectric layer to the silicide layer; and
a conductive layer extending through the dielectric layer to the TiN layer.

### Claim 10 (depends on 9)

The device of claim 9, wherein the conductive layer includes cobalt.

### Claim 11 (depends on 9)

The device of claim 9, wherein the TiN layer has a ratio of oxygen to titanium (O/Ti) at its surface is less than about 0.5.

### Claim 12 (depends on 9)

The device of claim 9, wherein the TiN layer has a density of about or more than 4.75 g/cm3.

### Claim 13 (depends on 9)

The device of claim 9, wherein a first portion of the TiN layer and a first portion of conductive layer are disposed over the first gate stack, and
wherein a second portion of the TiN layer and a second portion of the conductive layer are disposed over the second gate stack.

### Claim 14 (depends on 9)

The device of claim 9, wherein the silicide layer includes titanium silicon (TiSi).

### Claim 15 (depends on 9)

The device of claim 9, wherein the conductive layer includes first and second metal layers.

### Claim 16

A device comprising:
a source/drain feature disposed over a substrate;
a dielectric layer disposed over the substrate;
a self-aligned silicide layer disposed directly on the source/drain feature;
a titanium nitride (TiN) layer extending through the dielectric layer such that the TiN layer is disposed on the self-aligned silicide layer; and
a metal layer extending through the dielectric layer such that the metal layer is disposed on the TiN layer.

### Claim 17 (depends on 16)

The device of claim 16, wherein the TiN layer has:
a thickness ranging from about 5 Å to about 100 Å;
a ratio of oxygen to titanium (O/Ti) at that is less than about 0.5; and
a density of about or more than 4.75 g/cm3.

### Claim 18 (depends on 16)

The device of claim 16, wherein the metal layer includes cobalt.

### Claim 19 (depends on 16)

The device of claim 16, further comprising a first gate stack and a second gate stack formed over the substrate, wherein the source/drain feature is disposed between the first and second gate stacks.

### Claim 20 (depends on 16)

The device of claim 16, wherein the TiN layer physically contacts the self-aligned silicide layer.