# US 2017/0287752 A1 · Integrated metrology and process tool to enable local stress/overlay correction

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- Number: US 2017/0287752 A1
- Document ID: US20170287752A1
- Status: Published application
- Kind: A1
- Application number: 15/445,303
- Filed: 2017-02-28
- Published: 2017-10-05
- Earliest claimed: 2016-03-29
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Ludovic GODET; Mehdi VAEZ-IRAVANI; Todd EGAN; Mangesh BANGAR; Concetta RICCOBENE; Abdul Aziz KHAJA; Srinivas D. NEMANI; Ellie Y. YIEH; Sean S. KANG
- Web page: https://patentgrep.com/patent/US20170287752A1

## CPC

- H10P 72/0606: {Position monitoring, e.g. misposition detection or presence detection}
- H10P 30/20: into semiconductor materials, e.g. for doping
- H10P 72/0454: {surrounding a central transfer chamber}
- H10P 72/0464: {characterised by the construction of the transfer chamber}
- H10P 72/0466: {characterised by the construction of the load-lock chamber}
- H10P 72/0468: {comprising a chamber adapted to a particular process}
- H10P 72/0471: {comprising at least one ion or electron beam chamber}
- H10P 72/0616: {Monitoring of warpages, curvatures, damages, defects or the like}
- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of the disclosure provide an integrated system for performing a measurement process and a lithographic overlay error correction process on a semiconductor substrate in a single processing system. In one embodiment, a processing system includes at least a load lock chamber, a transfer chamber coupled to the load lock chamber, an ion implantation processing chamber coupled to or in the transfer chamber, and a metrology tool coupled to the transfer chamber, wherein the metrology tool is adapted to obtain stress profile or an overlay error on a substrate disposed in the metrology tool.

## Claims

### Claim 1

A processing system comprising:
at least a load lock chamber;
a transfer chamber coupled to the load lock chamber;
an ion implantation processing chamber coupled to the transfer chamber; and
a metrology tool coupled to or in the transfer chamber, wherein the metrology tool is adapted to obtain stress profile or an overlay error on a substrate disposed in the metrology tool.

### Claim 2 (depends on 1)

The processing system of claim 1 further comprising:
a deposition chamber coupled to the transfer chamber.

### Claim 3 (depends on 1)

The processing system of claim 1, further comprising:
a factory interface adapted to receive the substrate to be transferred through the load lock chamber to the transfer chamber when in process.

### Claim 4 (depends on 1)

The processing system of claim 1, wherein the ion implantation process is adapted to perform a surface modification process to the substrate to correct stress profile or overlay error of the substrate.

### Claim 5

A method for correcting stress profile or overlay error on a substrate, comprising:
performing a measurement process in a metrology tool disposed in a processing system on a substrate to obtain a substrate distortion or an overlay error map;
determining a surface modification recipe in a computing system based on the substrate distortion or overlay error map obtained from the measurement process in the processing system; and
performing an ion implantation process in a processing chamber disposed in the processing system to correct substrate distortion or overlay error on the substrate.

### Claim 6 (depends on 5)

The method of claim 5, wherein the processing chamber is an ion implantation processing chamber.

### Claim 7 (depends on 5)

The method of claim 5, wherein the processing chamber includes a beam source assembly.

### Claim 8 (depends on 5)

The method of claim 5, wherein performing the ion implantation process further comprises:
generating an ion beam in the processing chamber to a predetermined location on the substrate based on the surface modification recipe from the metrology tool.

### Claim 9 (depends on 5)

The method of claim 5, wherein determining the surface modification recipe in the computing system further comprises:
comparing the overlay error map or substrate distortion measured from the metrology tool with database library stored in the computing system.

### Claim 10 (depends on 6)

The method of claim 6, wherein the database library includes a correlation of a stress change or overlay error of the substrate to an ion implantation dose required for correction.

### Claim 11 (depends on 5)

The method of claim 5, wherein performing the ion implantation process in the processing chamber further comprises:
altering a film stress locally or globally on a film layer disposed on the substrate.

### Claim 12 (depends on 5)

The method of claim 5, wherein performing the ion implantation process in the processing chamber further comprises:
correcting overlay error or substrate distortion found on the substrate.

### Claim 13 (depends on 5)

The method of claim 5, wherein the surface modification recipe is determined in response to a film stress, substrate curvature, in plane distortion or pattern shift detected on the substrate.

### Claim 14 (depends on 5)

The method of claim 5, wherein the computing system is incorporated in the metrology tool or in the processing chamber in the processing system.

### Claim 15

A method for correcting overlay error on a substrate comprising:
measuring a film stress of a substrate disposed in a metrology tool in a processing system;
creating a correlation to the film stress behavior with a database library to determine an ion implantation recipe; and
performing an ion implantation process on selected discrete locations of the substrate using the determined ion implantation recipe in a processing chamber disposed in the processing system.

### Claim 16 (depends on 15)

The method of claim 15, wherein performing ion implantation process further comprises:
locally altering a residual stress of the substrate which changes local curvature of the substrate.

### Claim 17 (depends on 15)

The method of claim 15, wherein the metrology tool in the processing chamber is in data communication with the processing chamber disposed in the processing system.

### Claim 18 (depends on 15)

The method of claim 15, wherein the database library includes a correlation of a stress change or overlay error of the substrate to an ion implantation dose required for correction.

### Claim 19 (depends on 15)

The method of claim 15, wherein the processing chamber comprises a beam source assembly.

### Claim 20 (depends on 19)

The method of claim 19, wherein the beam source assembly provides ion beams to the selected discrete locations of the substrate to implant ions thereto.