# US 2017/0287716 A1 · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287716 A1 - Document ID: US20170287716A1 - Status: Published application - Kind: A1 - Application number: 15/623,887 - Filed: 2017-06-15 - Published: 2017-10-05 - Earliest claimed: 2014-12-16 - Assignees: Hitachi Kokusai Electric Inc. - Applicants: Hitachi Kokusai Electric Inc. - Inventors: Yukinao KAGA - Web page: https://patentgrep.com/patent/US20170287716A1 ## CPC - H10P 14/42: using a gas or vapour - C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations} - C23C 16/45546: {specially adapted for a substrate stack in the ALD reactor} - C23C 16/45563: {Gas nozzles} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/4584: {the substrate being rotated} - H10P 14/412: {Deposition of metallic or metal-silicide materials} - H10P 14/432: {using selective deposition} - H10P 14/60: of insulating materials - H10P 50/242: {of Group IV materials} - H10P 72/1921: {characterised by substrate supports} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail; and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool, wherein in the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction. ### Claim 2 (depends on 1) The method of claim 1, wherein in the act of rotating the substrate support tool, the substrate support tool supporting a plurality of substrates including the substrate with the rail is rotated, the plurality of substrates being stacked in a vertical direction, and in the act of supplying the process gas, the process gas is supplied via a nozzle extending in the vertical direction, the nozzle having a plurality of gas supply holes including the first gas supply hole. ### Claim 3 (depends on 1) The method of claim 1, wherein in the act of supplying the process gas, in addition to the first gas, a second gas as the process gas is supplied from a second gas supply hole positioned at an outer side of the substrate in the horizontal direction, and the first gas and the second gas are time-divisionally supplied a predetermined number of times. ### Claim 4 (depends on 3) The method of claim 3, wherein in the act of supplying the process gas, the second gas is supplied to the substrate in a second period in which the rail is not positioned between the second gas supply hole and the substrate. ### Claim 5 (depends on 3) The method of claim 3, wherein in the act of supplying the process gas, the first gas is supplied to the substrate in the first period in which the rail is not positioned between the first gas supply hole and the substrate, and the second gas is supplied to the substrate in a second period in which the rail is not positioned between the second gas supply hole and the substrate, in accordance with a relationship between a cycle time for time-divisionally supplying the first gas and the second gas and a rotation period of the substrate support tool. ### Claim 6 (depends on 3) The method of claim 3, wherein in the act of supplying the process gas, the second gas is supplied to the substrate in a second period in which the rail does not exist at a position where an angle formed by a gas flow of the second gas injected from the second gas supply hole and a peripheral edge of the substrate is a right angle. ### Claim 7 (depends on 1) The method of claim 1, wherein in the act of supplying the process gas, the supply of the first gas is stopped in a period in which the rail is positioned between the first gas supply hole and the substrate. ### Claim 8 (depends on 1) The method of claim 1, wherein the first gas is a metal-containing gas. ### Claim 9 A method of manufacturing a semiconductor device, comprising: rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail; and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool, wherein in the act of supplying the process gas, the first gas is supplied to the substrate in a period in which the rail does not exist at a position where an angle formed by a gas flow of the process gas injected from the first gas supply hole and a peripheral edge of the substrate is a right angle. ### Claim 10 (depends on 9) The method of claim 9, wherein in the act of rotating the substrate support tool, the substrate support tool supporting a plurality of substrates including the substrate with the rail is rotated, the plurality of substrates being stacked in a vertical direction, and wherein in the act of supplying the process gas, the process gas is supplied via a nozzle extending in the vertical direction, the nozzle having a plurality of gas supply holes including the first gas supply hole.