# US 2017/0287701 A1 · Epitaxial growth apparatus and method of manufacturing a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287701 A1 - Document ID: US20170287701A1 - Status: Published application - Kind: A1 - Application number: 15/239,190 - Filed: 2016-08-17 - Published: 2017-10-05 - Earliest claimed: 2016-03-31 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Shinji MIYAZAKI - Web page: https://patentgrep.com/patent/US20170287701A1 ## CPC - C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract According to one embodiment, an epitaxial growth apparatus includes a processing chamber, an exhaust pipe, and an introducing pipe. The exhaust pipe is communicated with the processing chamber. The introducing pipe is communicated with the exhaust pipe and an alkaline gas is introduced into the exhaust pipe via the introducing pipe. ## Claims ### Claim 1 An epitaxial growth apparatus, comprising: a processing chamber; an exhaust pipe communicated with the processing chamber; and an introducing pipe communicated with the exhaust pipe, an alkaline gas being introduced into the exhaust pipe via the introducing pipe. ### Claim 2 (depends on 1) The epitaxial growth apparatus according to claim 1, further comprising: a supply pipe communicated with the processing chamber, a first gas supply source supplying a processing gas to the processing chamber via the supply pipe, and a second gas supply source supplying the alkaline gas to the introducing pipe. ### Claim 3 (depends on 1) The epitaxial growth apparatus according to claim 1, further comprising: a heater unit heating the exhaust pipe. ### Claim 4 (depends on 1) The epitaxial growth apparatus according to claim 1, further comprising: a scrubber inserted into the exhaust pipe on a downstream side. ### Claim 5 (depends on 1) The epitaxial growth apparatus according to claim 1, wherein the introducing pipe is communicated with an upstream side portion of the exhaust pipe. ### Claim 6 (depends on 2) The epitaxial growth apparatus according to claim 2, wherein the first gas supply source performs start and termination of supplying the processing gas to the processing chamber while the second gas supply source is supplying the alkaline gas via the introducing pipe to the exhaust pipe. ### Claim 7 (depends on 1) The epitaxial growth apparatus according to claim 1, wherein the alkaline gas includes an ammonia gas. ### Claim 8 (depends on 2) The epitaxial growth apparatus according to claim 2, wherein the processing gas includes a raw material gas, a carrier gas, and an acidic gas. ### Claim 9 (depends on 8) The epitaxial growth apparatus according to claim 8, wherein the raw material gas includes a silane-based gas, the carrier gas includes a hydrogen gas, the acidic gas includes a hydrogen chloride gas, and the alkaline gas includes an ammonia gas. ### Claim 10 (depends on 3) The epitaxial growth apparatus according to claim 3, wherein the heater unit is configured to heat at least an inner surface of the exhaust pipe. ### Claim 11 (depends on 3) The epitaxial growth apparatus according to claim 3, wherein the heater unit is disposed along an inner surface of the exhaust pipe. ### Claim 12 (depends on 11) The epitaxial growth apparatus according to claim 11, wherein the heater unit is aligned to a longitudinal direction of the exhaust pipe. ### Claim 13 (depends on 11) The epitaxial growth apparatus according to claim 11, wherein the heater unit heats the inner surface of the exhaust pipe to a temperature of 200° C. or more and 400° C. or less. ### Claim 14 (depends on 4) The epitaxial growth apparatus according to claim 4, wherein the scrubber is a wet scrubber. ### Claim 15 (depends on 4) The epitaxial growth apparatus according to claim 4, further comprising: a supply pipe communicated with the processing chamber, a first gas supply source supplying a processing gas to the processing chamber via the supply pipe, and a second gas supply source supplying the alkaline gas to the introducing pipe, wherein the scrubber removes a gas ingredient by dissolving the gas ingredient in a liquid, the gas ingredient being generated by causing a reacting product of the processing gas and the alkaline gas to gasify in the exhaust pipe. ### Claim 16 (depends on 15) The epitaxial growth apparatus according to claim 15, wherein the scrubber includes a filter and further removes a substance passing through the exhaust pipe by adhering the substance to the filter. ### Claim 17 A method of manufacturing a semiconductor device, comprising: placing a substrate in a processing chamber of an epitaxial growth apparatus having an exhaust pipe communicated with the processing chamber; and introducing an alkaline gas into the exhaust pipe without passing through the processing chamber while forming an epitaxial growth layer on the substrate in the processing chamber. ### Claim 18 (depends on 17) The method according to claim 17, further comprising: heating the exhaust pipe by a heating unit, the alkaline gas being introduced into the heated exhaust pipe. ### Claim 19 (depends on 17) The method according to claim 17, wherein the forming of the epitaxial growth layer includes supplying a processing gas in the processing chamber, and the introducing of the alkaline gas is performed before the supplying of the processing gas, during the supplying of the processing gas, and after the supplying of the processing gas. ### Claim 20 (depends on 17) The method according to claim 17, wherein the alkaline gas includes an ammonia gas.