# US 2017/0287697 A1 · Method for manufacturing an soi wafer

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- Number: US 2017/0287697 A1
- Document ID: US20170287697A1
- Status: Published application
- Kind: A1
- Application number: 15/508,237
- Filed: 2015-08-28
- Published: 2017-10-05
- Earliest claimed: 2014-09-24
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Applicants: Shin-Etsu Handotai Co., Ltd.
- Inventors: Hiroji AGA; Susumu KUWABARA
- Web page: https://patentgrep.com/patent/US20170287697A1

## CPC

- H10P 90/16: {by reclaiming or re-processing}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 86/01: Manufacture or treatment
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 14/6322: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)}
- H10P 50/283: {by chemical means}
- H10P 50/642: {Chemical etching}
- H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel}
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P 14/6309: {of silicon in uncombined form, i.e. pure silicon}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step.

## Claims

### Claim at position 1

1-10. (canceled)

### Claim 11

A method for manufacturing an SOI wafer having an SOI layer including a thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:
(A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step;
(A2) determining a rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (A1) and a previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and
(A3) thinning the SOI layer of the SOI wafer rotated in the step (A2).

### Claim 12

A method for manufacturing an SOI wafer having an SOI layer including a thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:
(B0) heat treatment under an oxidizing gas atmosphere to form a thermal oxide film on a surface of the SOI layer;
(B1) measuring the SOI film thickness of the SOI wafer having the thermal oxide film formed in the step (B0) with the thermal oxide film remaining;
(B2) determining a rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (B1) and a previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and
(B3) thinning the SOI layer by batch processing cleaning which includes removing the thermal oxide film on the surface of the SOI layer and etching of the SOI layer of the SOI wafer rotated in the step (B2), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (B1).

### Claim 13

A method for manufacturing an SOI wafer having an SOI layer including a first thinning step and a second thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:
(C0) heat treatment under an oxidizing gas atmosphere to form a thermal oxide film on a surface of the SOI layer;
(C1) measuring the SOI film thickness of the SOI wafer having the thermal oxide film formed in the step (C0) with the thermal oxide film remaining;
(C2) determining a rotational position of the SOI wafer in the first thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (C1) and a previously determined radial stock removal distribution in the first thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position;
(C3) thinning the SOI layer to be thicker than a final target value of the film thickness as the first thinning step by batch processing cleaning which includes removing the thermal oxide film on the surface of the SOI layer and etching of the SOI layer of the SOI wafer rotated in the step (C2), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (C1);
(C4) measuring the SOI film thickness of the SOI wafer after the first thinning step;
(C5) determining a rotational position of the SOI wafer in the second thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (C4) and a previously determined radial stock removal distribution in the second thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and
(C6) thinning the SOI layer to be the final target value of the film thickness as the second thinning step by cleaning which includes etching of the SOI layer of the SOI wafer rotated in the step (C5), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (C4).

### Claim 14 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the cleaning of the step (C6) is performed by single wafer processing.

### Claim 15 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the rotational position is determined to a position where an area showing the maximum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the maximum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 16 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the rotational position is determined to a position where an area showing the maximum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the maximum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 17 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the rotational position is determined to a position where an area showing the maximum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the maximum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 18 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the rotational position is determined to a position where an area showing the minimum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the minimum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 19 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the rotational position is determined to a position where an area showing the minimum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the minimum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 20 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the rotational position is determined to a position where an area showing the minimum value of the radial SOI film thickness distribution obtained in the measuring of the film thickness corresponds to an area showing the minimum value of the previously determined radial stock removal distribution in the thinning step.

### Claim 21 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the rotational position is determined to a position where a difference between a calculated radial maximum value and a calculated radial minimum value of the SOI film thickness after the thinning step is minimum in calculation of the respective radial SOI film thickness distributions after the thinning step when altering the rotational position by a prescribed angle on the basis of the radial SOI film thickness distribution obtained by the measuring of the film thickness and the previously determined radial stock removal distribution in the thinning step.

### Claim 22 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the rotational position is determined to a position where a difference between a calculated radial maximum value and a calculated radial minimum value of the SOI film thickness after the thinning step is minimum in calculation of the respective radial SOI film thickness distributions after the thinning step when altering the rotational position by a prescribed angle on the basis of the radial SOI film thickness distribution obtained by the measuring of the film thickness and the previously determined radial stock removal distribution in the thinning step.

### Claim 23 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the rotational position is determined to a position where a difference between a calculated radial maximum value and a calculated radial minimum value of the SOI film thickness after the thinning step is minimum in calculation of the respective radial SOI film thickness distributions after the thinning step when altering the rotational position by a prescribed angle on the basis of the radial SOI film thickness distribution obtained by the measuring of the film thickness and the previously determined radial stock removal distribution in the thinning step.

### Claim 24 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the step of measuring the SOI film thickness before the thinning step and the subsequent step of rotating the SOI wafer are performed in the same apparatus.

### Claim 25 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the step of measuring the SOI film thickness before the thinning step and the subsequent step of rotating the SOI wafer are performed in the same apparatus.

### Claim 26 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the step of measuring the SOI film thickness before the thinning step and the subsequent step of rotating the SOI wafer are performed in the same apparatus.

### Claim 27 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the SOI layer is formed by an ion implantation delamination method including at least the steps of:
bonding a bond wafer having a micro bubble layer formed by an ion implantation with a base wafer to be a support substrate, and
delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer.

### Claim 28 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the SOI layer is formed by an ion implantation delamination method including at least the steps of:
bonding a bond wafer having a micro bubble layer formed by an ion implantation with a base wafer to be a support substrate, and
delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer.

### Claim 29 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the SOI layer is formed by an ion implantation delamination method including at least the steps of:
bonding a bond wafer having a micro bubble layer formed by an ion implantation with a base wafer to be a support substrate, and
delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer.

### Claim 30 (depends on 11)

The method for manufacturing an SOI wafer according to claim 11, wherein the thinning step is performed by immersion in SC1 solution.

### Claim 31 (depends on 12)

The method for manufacturing an SOI wafer according to claim 12, wherein the thinning step is performed by immersion in SC1 solution.

### Claim 32 (depends on 13)

The method for manufacturing an SOI wafer according to claim 13, wherein the thinning step is performed by immersion in SC1 solution.