# US 2017/0287696 A1 · Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0287696 A1 - Document ID: US20170287696A1 - Status: Published application - Kind: A1 - Application number: 15/511,831 - Filed: 2014-09-19 - Published: 2017-10-05 - Earliest claimed: 2014-09-19 - Assignees: Hitachi Kokusai Electric Inc. - Applicants: Hitachi Kokusai Electric Inc. - Inventors: Takaaki NODA; Shingo NOHARA; Kosuke TAKAGI; Takeo HANASHIMA; Mamoru SUEYOSHI; Kotaro KONNO; Motoshi SAWADA - Web page: https://patentgrep.com/patent/US20170287696A1 ## CPC - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C 16/401: {containing silicon} - C23C 16/402: {Silicon dioxide} - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/45512: {Premixing before introduction in the reaction chamber} - C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations} - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45544: {characterized by the apparatus} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/4583: {the substrate being supported substantially horizontally} - C23C 16/4587: {the substrate being supported substantially vertically} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: (a) arranging and accommodating a plurality of substrates in a vertical direction in a process vessel and blocking, by an adaptor, at least one of an upper space and a lower space of a substrate arrangement region in which the plurality of substrates is arranged; and (b) forming a film on each of the plurality of substrates by performing a cycle a predetermined number of times whiling blocking the at least one of the upper space and the lower space of the substrate arrangement region, the cycle including non-simultaneously performing: (b1) supplying a precursor gas to the plurality of substrates from a side of the substrate arrangement region in the process vessel; (b2) exhausting the precursor gas from the process vessel through an exhaust pipe; (b3) supplying a reaction gas to the plurality of substrates from the side of the substrate arrangement region in the process vessel; and (b4) exhausting the reaction gas from the process vessel through the exhaust pipe. ### Claim 2 (depends on 1) The method of claim 1, wherein in the act of (b1), the supply of the precursor gas is stopped while adsorption of the precursor gas onto the plurality of substrates is unsaturated. ### Claim 3 (depends on 1) The method of claim 1, wherein in the act of (b1), the supply of the precursor gas is stopped while an adsorption layer of the precursor gas formed on the plurality of substrates is a discontinuous layer. ### Claim 4 (depends on 1) The method of claim 1, wherein an exhaust valve is installed in the exhaust pipe, and in the act of (b1), an opening degree of the exhaust valve is set to become fully closed. ### Claim 5 (depends on 4) The method of claim 4, wherein in the act of (b3), the opening degree of the exhaust valve is set to become fully closed. ### Claim 6 (depends on 5) The method of claim 5, wherein in the acts of (b2) and (b4), the opening degree of the exhaust valve is set to become fully opened. ### Claim 7 (depends on 1) The method of claim 1, wherein in the act of (b1), a catalyst gas is supplied together with the precursor gas. ### Claim 8 (depends on 1) The method of claim 1, wherein in the act of (b3), a catalyst gas is supplied together with the reaction gas. ### Claim 9 (depends on 1) The method of claim 1, wherein a catalyst gas is supplied together with the precursor gas in the act of (b1), and a catalyst gas is supplied together with the reaction gas in the act of (b3). ### Claim 10 (depends on 1) The method of claim 1, wherein an inner wall surface of ceiling of the process vessel is horizontal and flat. ### Claim 11 (depends on 1) The method of claim 1, wherein the adaptor is configured as one or more plate-shaped adaptors, and a number of at least one plate-shaped adaptors among the one or more plate-shaped adaptors configured to block the lower space of the substrate arrangement region is set larger than a number of at least one plate-shaped adaptors among the one or more plate-shaped adaptors configured to block the upper space of the substrate arrangement region. ### Claim 12 (depends on 1) The method of claim 1, wherein a plurality of heat insulating plates are arranged in a vertical direction below the substrate arrangement region in the process vessel, and the adapter configured to block the lower space of the substrate arrangement region is installed to block a space between the substrate arrangement region and a heat insulating plate arrangement region in which the plurality of heat insulating plates are arranged. ### Claim 13 (depends on 12) The method of claim 12, wherein a thickness of the adaptor is greater than a thickness of each of the plurality of heat insulating plates. ### Claim 14 A substrate processing apparatus, comprising: a process vessel configured to accommodate a plurality of substrates; a gas supply system configured to supply a gas into the process vessel; a support configured to arrange and support the plurality of substrates in a vertical direction, and support an adaptor located in at least one of an upper space and a lower space of a substrate arrangement region in which the plurality of substrates is arranged; a transfer part configured to transfer the support into the process vessel; and a control part configured to control the gas supply system, an exhaust system, and the transfer part to perform: (a) arranging and accommodating the plurality of substrates in the vertical direction in the process vessel by transferring the support that supports the plurality of substrates and the adaptor into the process vessel, and blocking the at least one of the upper space and the lower space of the substrate arrangement region by the adaptor; and (b) forming a film on each of the plurality of substrates by performing a cycle a predetermined number of times while blocking the at least one of the upper space and the lower space of the substrate arrangement region, the cycle including non-simultaneously performing: (b1) supplying a precursor gas to the plurality of substrates from a side of the substrate arrangement region in the process vessel; (b2) exhausting the precursor gas from the process vessel through an exhaust pipe; (b3) supplying a reaction gas to the plurality of substrates from the side of the substrate arrangement region in the process vessel; and (b4) exhausting the reaction gas from the process vessel through the exhaust pipe. ### Claim 15 A computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising: (a) arranging and accommodating a plurality of substrates in a vertical direction in a process vessel and blocking, by an adaptor, at least one of an upper space and a lower space of a substrate arrangement region in which the plurality of substrates is arranged; and (b) forming a film on each of the plurality of substrates by performing a cycle a predetermined number of times whiling blocking the at least one of the upper space and the lower space of the substrate arrangement region, the cycle including non-simultaneously performing: (b1) supplying a precursor gas to the plurality of substrates from a side of the substrate arrangement region in the process vessel; (b2) exhausting the precursor gas from the process vessel through an exhaust pipe; (b3) supplying a reaction gas to the plurality of substrates from the side of the substrate arrangement region in the process vessel; and (b4) exhausting the reaction gas from the process vessel through the exhaust pipe.