# US 2017/0287646 A1 · Control-electrode shielding for improved linearity of a mems dvc device

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- Number: US 2017/0287646 A1
- Document ID: US20170287646A1
- Status: Published application
- Kind: A1
- Application number: 15/629,161
- Filed: 2017-06-21
- Published: 2017-10-05
- Earliest claimed: 2013-04-29
- Assignees: Cavendish Kinetics, Inc.
- Applicants: Cavendish Kinetics, Inc.
- Inventors: Robertus Petrus VAN KAMPEN; Ramadan A. ALHALABI
- Web page: https://patentgrep.com/patent/US20170287646A1

## CPC

- H01G 5/011: Electrodes
- H01G 5/013: Dielectrics
- H01G 5/16: using variation of distance between electrodes
- H01G 5/18: due to change in inclination, e.g. by flexing, by spiral wrapping
- H01H 59/0009: {making use of micromechanics}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H01H: ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00)

## Abstract

The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated.

## Claims

### Claim 1

A method of manufacturing a MEMS digital variable capacitor (DVC), wherein the improvement comprises:
depositing an electrically conductive layer over a first dielectric layer;
patterning the electrically conductive layer to form a first electrode, an RF electrode, a ground electrode and a shielding electrode, wherein the shielding electrode is disposed adjacent the RF electrode and the first electrode, wherein the shielding electrode is grounded;
depositing a second dielectric layer over the substrate, the first electrode, the RF electrode, the ground electrode and the shielding electrode;
planarizing the second dielectric layer to expose the first electrode, the RF electrode, the ground electrode and the shielding electrode;
depositing a third dielectric layer over the exposed electrodes and the second dielectric layer;
forming a moving electrode above the third dielectric layer;
forming a fourth dielectric layer over the moving electrode; and
forming a second electrode over the fourth dielectric layer, wherein the second electrode is disposed opposite the first electrode, wherein the moving electrode is movable from a first position in contact with the third dielectric layer and a second position in contact with the fourth dielectric layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising, prior to depositing the electrically conductive layer, forming a first via hole in the substrate and forming a first shielding via in the first via.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first shielding via is coupled to the shielding electrode.

### Claim 4 (depends on 3)

The method of claim 3, further comprising, prior to forming the first via hole, forming an underneath shielding electrode in the substrate.

### Claim 5 (depends on 4)

The method of claim 4, wherein the underneath shielding electrode is coupled to the first shielding via.

### Claim 6 (depends on 5)

The method of claim 5, wherein the underneath shielding electrode is coupled to the ground electrode.

### Claim 7 (depends on 6)

The method of claim 6, further comprising forming a second via hole in the substrate to expose the underneath electrode and depositing an electrically conductive material within the second via hole to form a second shielding via, wherein the ground electrode is coupled to the second shielding via.

### Claim 8 (depends on 2)

The method of claim 2, further comprising, prior to forming the first via hole, forming an underneath shielding electrode in the substrate.

### Claim 9 (depends on 8)

The method of claim 8, wherein the underneath shielding electrode is coupled to the first shielding via.

### Claim 10 (depends on 9)

The method of claim 9, wherein the underneath shielding electrode is coupled to the ground electrode.

### Claim 11 (depends on 10)

The method of claim 10, further comprising forming a second via hole in the substrate to expose the underneath electrode and depositing an electrically conductive material within the second via hole to form a second shielding via, wherein the ground electrode is coupled to the second shielding via.