# US 2017/0285482 A1 · Organic processing liquid and pattern forming method

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- Number: US 2017/0285482 A1
- Document ID: US20170285482A1
- Status: Published application
- Kind: A1
- Application number: 15/629,985
- Filed: 2017-06-22
- Published: 2017-10-05
- Earliest claimed: 2014-12-26
- Assignees: FUJIFILM Corporation
- Applicants: FUJIFILM Corporation
- Inventors: Toru TSUCHIHASHI; Hideaki TSUBAKI; Kei YAMAMOTO
- Web page: https://patentgrep.com/patent/US20170285482A1

## CPC

- G03F 7/32: Liquid compositions therefor, e.g. developers
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021)
- G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023)
- G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74)
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light}
- G03F 7/2006: {using coherent light; using polarised light}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- G03F 7/325: {Non-aqueous compositions}
- G03F 7/327: {Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts}
- G03F 7/38: Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)}
- G03F 7/40: Treatment after imagewise removal, e.g. baking
- G03F 7/422: {using liquids only (G03F7/421 takes precedence)}
- H10P 76/2041: {Photolithographic processes}
- H10P 76/2042: {using lasers}
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

## Claims

### Claim 1

An organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid comprising:
an organic solvent,
wherein the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

### Claim 2 (depends on 1)

The organic processing liquid according to claim 1, wherein the organic processing liquid is a developer.

### Claim 3 (depends on 2)

The organic processing liquid according to claim 2, wherein the organic solvent includes an ester-based solvent.

### Claim 4 (depends on 3)

The organic processing liquid according to claim 3, wherein the ester-based solvent includes isoamyl acetate.

### Claim 5 (depends on 2)

The organic processing liquid according to claim 2, wherein the organic solvent includes a ketone-based solvent.

### Claim 6 (depends on 2)

The organic processing liquid according to claim 2, further comprising:
a basic compound.

### Claim 7 (depends on 1)

The organic processing liquid according to claim 1, wherein the organic processing liquid is a rinsing liquid.

### Claim 8 (depends on 7)

The organic processing liquid according to claim 7, wherein the organic solvent includes a hydrocarbon-based solvent.

### Claim 9 (depends on 7)

The organic processing liquid according to claim 7, wherein the organic solvent includes a ketone-based solvent.

### Claim 10 (depends on 7)

The organic processing liquid according to claim 7, wherein the organic solvent includes an ether-based solvent.

### Claim 11 (depends on 8)

The organic processing liquid according to claim 8, wherein the hydrocarbon-based solvent includes undecane.

### Claim 12 (depends on 1)

The organic processing liquid according to claim 1, further comprising:
an antioxidant.

### Claim 13 (depends on 1)

The organic processing liquid according to claim 1, further comprising:
a surfactant.

### Claim 14 (depends on 1)

A pattern forming method, comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition;
an exposure step of exposing the resist film; and
a treatment step of treating the exposed resist film with the organic processing liquid according to claim 1.

### Claim 15 (depends on 14)

The pattern forming method according to claim 14,
wherein the treatment step includes a development step of developing with a developer, wherein the developer is an organic processing liquid including an organic solvent, and the organic solvent includes isoamyl acetate, and
wherein the content of an oxidant in the organic processing processing liquid used as the developer is 10 mmol/L or less.

### Claim 16 (depends on 14)

The pattern forming method according to claim 14,
wherein the treatment step includes a development step of developing with a developer, wherein the developer is an organic processing liquid comprising an organic solvent and a basic compound, and
wherein the content of an oxidant in the organic processing processing liquid used as the developer is 10 mmol/L or less.

### Claim 17 (depends on 14)

The pattern forming method according to claim 14,
wherein the treatment step includes a rinsing step of cleaning with a rinsing liquid,
wherein the rinsing liquid is an organic processing liquid including an organic solvent and the organic solvent includes a hydrocarbon based solvent, and wherein the content of an oxidant in the organic processing processing liquid used as the rinsing liquid is 10 mmol/L or less.

### Claim 18 (depends on 3)

The organic processing liquid according to claim 3, further comprising:
a basic compound.

### Claim 19 (depends on 4)

The organic processing liquid according to claim 4, further comprising:
a basic compound.

### Claim 20 (depends on 5)

The organic processing liquid according to claim 5, further comprising:
a basic compound.
