# US 2017/0285481 A1 · Development method, development device, and non-transitory computer-readable storage medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0285481 A1 - Document ID: US20170285481A1 - Status: Published application - Kind: A1 - Application number: 15/444,671 - Filed: 2017-02-28 - Published: 2017-10-05 - Earliest claimed: 2016-04-01 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yusaku HASHIMOTO; Takeshi SHIMOAOKI; Masahiro FUKUDA; Kouichirou TANAKA - Web page: https://patentgrep.com/patent/US20170285481A1 ## CPC - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - B05D 1/002: {the substrate being rotated} - B05D 1/005: {Spin coating} - G03F 7/3021: {from a wafer supported on a rotating chuck} - G03F 7/3028: {characterised by means for on-wafer monitoring of the processing} - G03F 7/3092: {Recovery of material; Waste processing} - G03F 7/32: Liquid compositions therefor, e.g. developers - G03F 7/40: Treatment after imagewise removal, e.g. baking - H10P 72/0448: {Apparatus for applying a liquid, a resin, an ink or the like} - H10P 76/2041: {Photolithographic processes} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate. ## Claims ### Claim 1 A development method comprising: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate. ### Claim 2 (depends on 1) The development method according to claim 1, wherein the development step includes a step of stopping the substrate after being supplied with the developing solution. ### Claim 3 (depends on 2) The development method according to claim 2, wherein the revolution speed of the substrate in the second rotation step is higher than the revolution speed of the substrate in the first rotation step. ### Claim 4 (depends on 3) The development method according to claim 3, wherein the revolution speed of the substrate in the first rotation step is in a range of 150 to 1500 rpm. ### Claim 5 (depends on 4) The development method according to claim 4, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 6 (depends on 3) The development method according to claim 3, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 7 (depends on 2) The development method according to claim 2, wherein the revolution speed of the substrate in the first rotation step is in a range of 150 to 1500 rpm. ### Claim 8 (depends on 7) The development method according to claim 7, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 9 (depends on 2) The development method according to claim 2, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 10 (depends on 1) The development method according to claim 1, wherein the revolution speed of the substrate in the second rotation step is higher than the revolution speed of the substrate in the first rotation step. ### Claim 11 (depends on 10) The development method according to claim 10, wherein the revolution speed of the substrate in the first rotation step is in a range of 150 to 1500 rpm. ### Claim 12 (depends on 11) The development method according to claim 11, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 13 (depends on 10) The development method according to claim 10, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 14 (depends on 1) The development method according to claim 1, wherein the revolution speed of the substrate in the first rotation step is in a range of 150 to 1500 rpm. ### Claim 15 (depends on 14) The development method according to claim 14, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 16 (depends on 1) The development method according to claim 1, wherein in the first rotation step, the substrate is rotated for a time in a range of 1 to 2 seconds. ### Claim 17 A development device comprising: a substrate holding unit that horizontally holds a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure; a rotating mechanism that rotates the substrate holding unit and thereby rotates the substrate around a central axis; a developing solution supply unit that supplies a developing solution to a surface of the substrate; and a control unit that outputs control signals to execute a step of supplying the developing solution to the substrate to perform development, then execute a step of increasing revolution speed to rotate the substrate in a first rotational direction so as to spin off and remove part of the developing solution from the substrate, and then execute a step of rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate. ### Claim 18 (depends on 1) A non-transitory computer-readable storage medium storing a computer program to be used by a development device that performs development on a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, wherein the computer program includes steps for executing the development method according to claim 1.