# US 2017/0284864 A1 · Optical proximity sensor and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0284864 A1 - Document ID: US20170284864A1 - Status: Published application - Kind: A1 - Application number: 15/145,917 - Filed: 2016-05-04 - Published: 2017-10-05 - Earliest claimed: 2016-03-30 - Inventors: TING-YI CHEN - Web page: https://patentgrep.com/patent/US20170284864A1 ## CPC - G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)} - G01J 1/0204: {Compact construction} - G01J 1/0214: {Constructional arrangements for removing stray light} - G01J 1/04: Optical or mechanical part {supplementary adjustable parts} - G01J 1/08: Arrangements of light sources specially adapted for photometry {standard sources, also using luminescent or radioactive material} - G01J 1/1626: {Arrangements with two photodetectors, the signals of which are compared} - G01J 1/4204: {with determination of ambient light (solar light G01J2001/4266)} - G01S 7/4813: {Housing arrangements} - G01S 17/04: Systems determining the presence of a target - H01S 5/02325: Mechanically integrated components on mount members or optical micro-benches - H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] - H10F 39/198: {Contact-type image sensors [CIS]} - H10F 55/255: formed in, or on, a common substrate - H10W 90/00: Package configurations - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate with a proximity sensor thereon, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. Also, with the manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the one of the proximity sensor is thereby minimized. ## Claims ### Claim 1 A complex optical proximity sensor, comprising: a substrate; a light emitter coupled to the substrate; an application-specific integrated circuit chip coupled to the substrate with a proximity sensor installed on the chip and a barrier disposed between the chip and the light emitter; and an ambient light detection chip separately manufactured and then coupled to the application-specific integrated circuit chip, the ambient light detection chip extending to a pre-determined height relative to a laterally extended surface of the application-specific integrated circuit chip; said ambient light detection chip being offset in position from the proximity sensor to be laterally spaced therefrom and to thereby form a complex optical proximity sensor; whereby a light is emitted from the light emitter and reflected to the proximity sensor for detection; the barrier is arranged at a pre-determined height to prevent interference from the emitted light to the proximity sensor and to minimize a detection angle of the proximity sensor; and the ambient light detection chip is manufactured separately with a height in accordance with the height of the barrier to maximize a detection angle of the ambient light detection chip. ### Claim 2 (depends on 1) The complex optical proximity sensor as claimed in claim 1, wherein the ambient light detection chip is a chip for ambient light detection, RGB color detection, or ultraviolet (UV) detection. ### Claim 3 (depends on 1) The complex optical proximity sensor as claimed in claim 1, wherein the light emitter is a LED, a laser diode (LD), or a vertical-cavity surface-emitting laser (VCSEL). ### Claim 4 (depends on 1) The complex optical proximity sensor as claimed in claim 1, wherein the substrate is either a ceramic substrate or a PCB, and the application-specific integrated circuit chip has a plurality of first connect points to be coupled to a plurality of second connect points on the ambient light detection chip. ### Claim 5 (depends on 4) The complex optical proximity sensor as claimed in claim 4, wherein the substrate has a plurality of bond pads arranged under a bottom thereof to be coupled to the application-specific integrated circuit chip and the light emitter, making the complex optical proximity sensor a surface-mount device. ### Claim 6 (depends on 1) The complex optical proximity sensor as claimed in claim 1, wherein the substrate has a plurality of transparent packages for the ambient light detection chip, the application-specific integrated circuit chip and the light emitter to be separately encapsulated therein. ### Claim 7 (depends on 1) The complex optical proximity sensor as claimed in claim 1, wherein the substrate further has a non-transparent package for the barrier to be encapsulated therein. ### Claim 8 (depends on 6) The complex optical proximity sensor as claimed in claim 6, wherein the material of transparent packages is made of lens. ### Claim 9 (depends on 1) A manufacturing method of the complex optical proximity sensor as claimed in claim 1, comprising: a) providing a substrate; b) providing a light emitter coupled to the substrate; c) providing an application-specific integrated circuit chip coupled to the substrate with a proximity sensor installed on the chip and a barrier disposed between the chip and the light emitter; and d) providing an ambient light detection chip coupled to the application-specific integrated circuit chip, the ambient light detection chip extending to a pre-determined height relative to a laterally extended surface of the application-specific integrated circuit chip; said ambient light detection chip being offset in position from the proximity sensor to be laterally spaced therefrom and to thereby form a complex optical proximity sensor; whereby a light is emitted from the light emitter and reflected to the proximity sensor for detection; the barrier is arranged at a pre-determined height to prevent interferences from the emitted light to the proximity sensor and to minimize a detection angle of the proximity sensor; and the ambient light detection chip is manufactured separately and has a height in accordance with the height of the barrier to maximize a detection angle of the ambient light detection chip. ### Claim 10 (depends on 9) The method as claimed in claim 9, wherein the substrate is either a ceramic substrate or a PCB to be coupled to the application-specific integrated circuit chip and the light emitter, and the application-specific integrated circuit chip has a plurality of first connect points to be coupled to a plurality of second connect points on the ambient light detector chip.