# US 2017/0283984 A1 · SUBSTRATE MOUNTING MEMBER, WAFER PLATE, AND SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0283984 A1 - Document ID: US20170283984A1 - Status: Published application - Kind: A1 - Application number: 15/358,543 - Filed: 2016-11-22 - Published: 2017-10-05 - Earliest claimed: 2016-03-30 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Kenichi HAMANO; Hiroaki SUMITANI - Web page: https://patentgrep.com/patent/US20170283984A1 ## CPC - C30B 23/025: {characterised by the substrate} - C23C 14/50: Substrate holders - C23C 16/325: {Silicon carbide} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate} - C30B 29/36: Carbides - C30B 35/002: {Crucibles or containers} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h4≦3pa4(1−v2){(5+v)/(1+v)}16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa]. ## Claims ### Claim 1 A substrate mounting member as a member for mounting a SiC substrate for epitaxial growth, comprising: a wafer plate including a SiC polycrystal; and a supporting plate configured to be placed on said wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with said wafer plate, wherein a thickness h [mm] of said supporting plate satisfies an expression h4≦3pa4(1−v2){(5+v)/(1+v)}/16E when a force applied to a unit area of said supporting plate by a self-weight of said supporting plate and by said SiC substrate is represented as p [N/mm2], a radius of said supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa]. ### Claim 2 A substrate mounting member as a member for mounting a SiC substrate for epitaxial growth, comprising: a wafer plate including a SiC polycrystal; and a supporting plate configured to be placed on said wafer plate and include no SiC polycrystal, wherein said SiC substrate, in a state of being mounted, is located above said supporting plate so as to be spaced apart therefrom. ### Claim 3 A wafer plate comprising a mounting portion configured to have a SiC substrate mounted thereon, wherein with said SiC substrate mounted on said mounting portion, no SiC polycrystal is included immediately under said SiC substrate and SiC polycrystals are included in the remaining regions. ### Claim 4 (depends on 3) The wafer plate according to claim 3, wherein said mounting portion is a counterbore portion, and with said SiC substrate mounted on said counterbore portion, a gap exists between said SiC substrate and a bottom surface of said counterbore portion. ### Claim 5 (depends on 1) A method for manufacturing a SiC epitaxial substrate, comprising: mounting a SiC substrate on the substrate mounting member according to claim 1; and conducting epitaxial growth on said SiC substrate. ### Claim 6 (depends on 2) A method for manufacturing a SiC epitaxial substrate, comprising: mounting a SiC substrate on the substrate mounting member according to claim 2; and conducting epitaxial growth on said SiC substrate. ### Claim 7 (depends on 3) A method for manufacturing a SiC epitaxial substrate, comprising: mounting a SiC substrate on the wafer plate according to claim 3; and conducting epitaxial growth on said SiC substrate. ### Claim 8 (depends on 4) A method for manufacturing a SiC epitaxial substrate, comprising: mounting a SiC substrate on the wafer plate according to claim 4; and conducting epitaxial growth on said SiC substrate.