# US 2017/0283952 A1 · Plasma cvd apparatus

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- Number: US 2017/0283952 A1
- Document ID: US20170283952A1
- Status: Published application
- Kind: A1
- Application number: 15/626,856
- Filed: 2017-06-19
- Published: 2017-10-05
- Earliest claimed: 2014-12-22
- Assignees: Asahi Glass Company, Limited
- Applicants: Asahi Glass Company, Limited
- Inventors: Hirotomo KAWAHARA; Kazunobu MAESHIGE; Nobutaka AOMINE; Hiroshi HANEKAWA
- Web page: https://patentgrep.com/patent/US20170283952A1

## CPC

- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- C23C 16/44: characterised by the method of coating (C23C16/04 takes precedence)
- C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber
- C23C 16/503: using DC or AC discharges
- H01J 37/32532: {Electrodes}
- H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means}
- H01J 37/32669: {Particular magnets or magnet arrangements for controlling the discharge}
- H01J 37/32733: {Means for moving the material to be treated}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H10P 14/60: of insulating materials
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69394: {the material containing titanium, e.g. TiO2}
- H01J 2237/3321: CVD [Chemical Vapor Deposition]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

## Claims

### Claim 1

A plasma CVD apparatus comprising:
a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and
a magnet array configured by a plurality of magnets,
wherein the plasma source has an electrode group,
the electrode group is configured by arranging n electrodes (n being an even integer greater than or equal to two) including a first electrode and a second electrode, in an order of electrode numbers from the first electrode,
each of the electrodes of the electrode group is connected to the alternating current power supply,
an exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group,
the magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source, and
in the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

### Claim 2 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein in the magnet array, for all magnets, poles facing the plasma source are arranged to be the same.

### Claim 3 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein a number of magnets included in the magnet array is in a range from (n−1) to (n+1).

### Claim 4 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein the magnet array includes (n−1) magnets, and
wherein the magnets are arranged substantially at positions facing the exits of the flow channels for the precursor gas arranged in the electrode group, respectively.

### Claim 5 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein the magnet array includes n magnets, and
wherein the magnets are arranged substantially at positions facing the electrodes configuring the electrode group, respectively.

### Claim 6 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein an electric voltage applied to n/2 electrodes configuring the electrode group exhibits an opposite polarity to an electric voltage applied to remaining electrodes, and
wherein electric voltages of the same polarity are applied to at least one pair of two adjacent electrodes.

### Claim 7 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein an electric voltage applied to n/2 electrodes configuring the electrode group exhibits an opposite polarity to an electric voltage applied to remaining electrodes, and
wherein electric voltages of the same polarity are applied to even-numbered electrodes.

### Claim 8 (depends on 1)

The plasma CVD apparatus according to claim 1 further comprising
a conveyance unit configured to convey a body to be processed between the plasma source and the magnet array.

### Claim 9 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein each electrode of the electrode group includes a slit for ejecting plasma.

### Claim 10 (depends on 1)

The plasma CVD apparatus according to claim 1,
wherein the respective electrodes of the electrode group are connected to a single alternating current power supply.