# US 2017/0283944 A1 · Semiconductor manufacturing device and semiconductor manufacturing method

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- Number: US 2017/0283944 A1
- Document ID: US20170283944A1
- Status: Published application
- Kind: A1
- Application number: 15/508,421
- Filed: 2015-06-24
- Published: 2017-10-05
- Earliest claimed: 2014-09-03
- Assignees: Sumitomo Chemical Company, Limited
- Applicants: Sumitomo Chemical Company, Limited
- Inventors: Hajime FUJIKURA
- Web page: https://patentgrep.com/patent/US20170283944A1

## CPC

- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- B08B 5/02: Cleaning by the force of jets, e.g. blowing-out cavities {(airguns or nozzles per se B05B1/005)}
- C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/54: Apparatus specially adapted for continuous coating
- C30B 25/165: {the flow of the reactive gases}
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- C30B 29/406: {Gallium nitride}
- C30B 35/00: Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- H10P 72/0434: {mainly by convection}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/7604: {the wafers being placed on a susceptor, stage or support}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/3416: {Nitrides}
- H10P 14/3418: {Phosphides}
- H10P 14/3421: {Arsenides}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

## Claims

### Claim 1

A semiconductor manufacturing device, comprising:
a processing vessel;
a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section;
a substrate holding member disposed in the growth section;
a source gas supply system that supplies a source gas into the growth section;
a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and
a heater that heats the growth section and the cleaning section.

### Claim 2 (depends on 1)

The semiconductor manufacturing device according to claim 1, wherein a downstream side end of the source gas supply system and a downstream side end of the cleaning gas supply system coincide with an upstream side end of the partition wall or disposed on a downstream side thereof, regarding a positon of a gas flow direction.

### Claim 3 (depends on 1)

The semiconductor manufacturing device according to claim 1, wherein the partition wall is set in the reaction vessel so that a surface exposed to the growth section side and a surface exposed to the cleaning section side can be reversed.

### Claim 4 (depends on 1)

The semiconductor manufacturing device according to claim 1,
wherein the source gas supply system has a chloride source gas generating section that generates a chloride source gas using a chlorine-based gas, and
the cleaning gas supply system is commonly connected to a supply source of the chlorine-based gas used in the chloride source gas generating section.

### Claim 5

A semiconductor manufacturing method, using a semiconductor manufacturing device comprising:
a processing vessel;
a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section;
a substrate holding member disposed in the growth section;
a source gas supply system that supplies a source gas into the growth section;
a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and
a heater that heats the growth section and the cleaning section,
the method comprising the steps of:
supplying the source gas from the source gas supply system to a substrate held by the substrate holding member disposed in the growth section to grow semiconductors on the substrate, and simultaneously supplying the cleaning gas from the cleaning gas supply system to a cleaning member disposed in the cleaning section to remove the semiconductors deposited on the cleaning member, in a state where the growth section and the cleaning section are heated by the heater.

### Claim 6 (depends on 5)

The semiconductor manufacturing method according to claim 5, for performing the step multiple numbers of times while exchanging a substrate and a cleaning member,
wherein a plurality of the same kind of members are detachably prepared as a member disposed at a position in the processing vessel where semiconductors are deposited, and among these members, the member already used in the step of a certain time and having semiconductors deposited thereon, is selected as a cleaning member in the step performed after the time in which the cleaning member becomes the already used member, and the member already cleaned is reused in the step performed after the time in which the cleaning member becomes the already cleaned member.

### Claim 7 (depends on 5)

The semiconductor manufacturing method according to claim 5, for performing the steps multiple numbers of times while exchanging a substrate and a cleaning member,
wherein the partition wall used in the step of a certain time is used in the step of the next time, with a surface exposed to the growth section side and a surface exposed to the cleaning section side being reversed.

### Claim 8 (depends on 5)

The semiconductor manufacturing method according to claim 5, wherein in the step, a chloride source gas contained in the source gas is generated using a chlorine-based gas, and a chlorine-based gas of the same kind as the chlorine-based gas used for generating the chloride source gas is used as the cleaning gas.