# US 2017/0282299 A1 · Manufacturing method for glass substrate, method for forming hole in glass substrate, and apparatus for forming hole in glass substrate

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- Number: US 2017/0282299 A1
- Document ID: US20170282299A1
- Status: Published application
- Kind: A1
- Application number: 15/472,636
- Filed: 2017-03-29
- Published: 2017-10-05
- Earliest claimed: 2016-03-31
- Assignees: Asahi Glass Company, Limited
- Applicants: Asahi Glass Company, Limited
- Inventors: Motoshi ONO
- Web page: https://patentgrep.com/patent/US20170282299A1

## CPC

- B23K 26/382: by boring
- B23K 26/402: involving non-metallic material, e.g. isolators
- B23K 2103/54: {Glass}
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

## Abstract

A manufacturing method for a glass substrate having a hole with a depth of d (μm) or more includes irradiating the glass substrate with a laser beam emitted from a CO2 laser oscillator for an irradiation time t (μsec), to form a hole in the glass substrate. The laser beam is delivered to the glass substrate after being condensed at a focusing lens. A power density Pd (W/cm2), defined by Pd=P0/S where P0 and S are a power and a beam cross-sectional area of the laser beam just prior to entering the focusing lens, respectively, is 600 W/cm2 or less. The irradiation time t (μsec) satisfies t≧10×d/Pd)1/2.

## Claims

### Claim 1

A manufacturing method for a glass substrate having a hole with a depth of d (μm) or more, comprising:
irradiating the glass substrate with a laser beam emitted from a CO2 laser oscillator for an irradiation time t (μsec), to form a hole in the glass substrate,
wherein the laser beam is delivered to the glass substrate after being condensed at a focusing lens,
wherein a power density Pd (W/cm2), defined by
Pd=P0/S,
where P0 and S are a power and a beam cross-sectional area of the laser beam just prior to entering the focusing lens, respectively, is 600 W/cm2 or less, and
wherein the irradiation time t (μsec) satisfies
t≧10×d/(Pd)1/2.

### Claim 2 (depends on 1)

The manufacturing method according to claim 1,
wherein the CO2 laser oscillator is a continuous wave CO2 laser oscillator.

### Claim 3 (depends on 1)

The manufacturing method according to claim 1,
wherein the CO2 laser oscillator is a pulsed CO2 laser oscillator.

### Claim 4 (depends on 1)

The manufacturing method according to claim 1,
wherein a wavelength of the laser beam emitted from the CO2 laser oscillator is in a range from 9.2 μm to 9.8 μm.

### Claim 5 (depends on 1)

The manufacturing method according to claim 1,
wherein the hole is a through-hole.

### Claim 6

A method for forming a hole with a depth of d (μm) or more in a glass substrate, comprising:
irradiating the glass substrate with a laser beam emitted from a CO2 laser oscillator for an irradiation time t (μsec), to form a hole in the glass substrate,
wherein the laser beam is delivered to the glass substrate after being condensed at a focusing lens,
wherein a power density Pd (W/cm2), defined by
Pd=P0/S,
where P0 and S are a power and a beam cross-sectional area of the laser beam just prior to entering the focusing lens, respectively, is 600 W/cm2 or less, and
wherein the irradiation time t (μsec) satisfies
t≧10×d/(Pd)1/2.

### Claim 7 (depends on 6)

The method according to claim 6,
wherein the CO2 laser oscillator is a continuous wave CO2 laser oscillator.

### Claim 8 (depends on 6)

The method according to claim 6,
wherein the CO2 laser oscillator is a pulsed CO2 laser oscillator.

### Claim 9 (depends on 6)

The method according to claim 6,
wherein the hole is a through-hole.

### Claim 10

An apparatus for forming a hole with a depth of d (μm) or more in a glass substrate, comprising:
a CO2 laser oscillator configured to emit a laser beam; and
a focusing lens configured to condense the laser beam into the glass substrate,
wherein the glass substrate is irradiated with the laser beam for an irradiation time t (μsec), to form a hole in the glass substrate,
wherein a power density Pd (W/cm2), defined by
Pd=P0/S,
where P0 and S are a power and a beam cross-sectional area of the laser beam just prior to entering the focusing lens, respectively, is 600 W/cm2 or less, and
wherein the irradiation time t (μsec) satisfies
t≧10×d/(Pd)1/2.

### Claim 11 (depends on 10)

The apparatus according to claim 10,
wherein the CO2 laser oscillator is a continuous wave CO2 laser oscillator.

### Claim 12 (depends on 10)

The apparatus according to claim 10,
wherein the CO2 laser oscillator is a pulsed CO2 laser oscillator.

### Claim 13 (depends on 10)

The apparatus according to claim 10,
wherein a wavelength of the laser beam emitted from the CO2 laser oscillator is in a range from 9.2 μm to 9.8 μm.

### Claim 14 (depends on 10)

The apparatus according to claim 10,
wherein an aperture configured to control the beam cross-sectional area of the laser beam is installed between the CO2 laser oscillator and the focusing lens.

### Claim 15 (depends on 14)

The apparatus according to claim 14,
wherein a λ/4 wave plate is installed between the CO2 laser oscillator and the aperture.

### Claim 16 (depends on 10)

The apparatus according to claim 10,
wherein the hole is a through-hole.
