Cross scan proximity correction with ebeam universal cutter
AssigneeIntel Corporation
InventorYAN A. BORODOVSKY
Life of this patent
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Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.
Claims22
A column for an e-beam direct write lithography tool, the column comprising:
- a first blanker aperture array (BAA) comprising a staggered array of openings having a pitch along an array direction, the array direction orthogonal to a scan direction, wherein each opening has a first dimension in the array direction;
- and
- a second BAA comprising a staggered array of openings having the pitch along the array direction, wherein each opening has a second dimension in the array direction, the second dimension greater than the first dimension.
A method of forming a pattern for a semiconductor structure, the method comprising:
- forming a pattern of parallel lines above a substrate;
- aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool, wherein the e-beam tool comprises a column having a blanker aperture array (BAA) comprising:
- a first staggered array of openings having a pitch along an array direction, the array direction orthogonal to the scan direction, wherein each opening has a first dimension in the array direction;
- and
- a second staggered array of openings having the pitch along the array direction, wherein each opening has a second dimension in the array direction, the second dimension greater than the first dimension;
- selecting one array from the first staggered array or the second staggered array;
- and
- forming a pattern of cuts or vias in or above the pattern of parallel lines while scanning the substrate along the scan direction.
A column for e-beam tool, the column comprising:
- an electron source for providing a beam of electrons;
- a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons;
- high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons;
- a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons;
- a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising:
- a first staggered array of openings having a pitch along an array direction, wherein each opening has a first dimension in the array direction;
- and
- a second staggered array of openings having the pitch along the array direction, wherein each opening has a second dimension in the array direction, the second dimension greater than the first dimension;
- a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons;
- and
- a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a direction orthogonal to the array direction of the BAA.
Dependencies are inferred from the claim text.