# US 2017/0257950 A1 · Polysiloxane Films and Methods of Making Polysiloxane Films > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0257950 A1 - Document ID: US20170257950A1 - Status: Published application - Kind: A1 - Application number: 15/059,682 - Filed: 2016-03-03 - Published: 2017-09-07 - Earliest claimed: 2016-03-03 - Assignees: Motorola Mobility LLC - Applicants: Motorola Mobility LLC - Inventors: Richard W. Brotzman; Ernest Sirois; Deborah Paskiewicz - Web page: https://patentgrep.com/patent/US20170257950A1 ## CPC - H05K 3/28: Applying non-metallic protective coatings {(H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673)} - B05D 1/62: {Plasma-deposition of organic layers (plasma deposition in general C23C14/00, C23C16/00)} - B05D 5/08: to obtain an anti-friction or anti-adhesive surface (rendering particulate materials free-flowing in general, e.g. making them hydrophobic B01J2/30) - C09D 183/04: Polysiloxanes - C09D 183/08: containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen - C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides - C23C 16/505: using radio frequency discharges - H05K 3/281: {by means of a preformed insulating foil (H05K3/284 takes precedence)} - B05D 2518/12: Ceramic precursors (polysiloxanes, polysilazanes) - C08G 77/24: halogen-containing groups - C08G 77/80: {Siloxanes having aromatic substituents, e.g. phenyl side groups} - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02) - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ## Abstract A method of forming a polysiloxane film on a substrate comprises polymerizing a siloxane monomer in a reaction chamber containing the substrate. The polymerization is catalyzed by a 30-60 W radio frequency plasma, the pressure in the reaction chamber during the polymerization is 100-400 mTorr, the residence time of the siloxane monomer in the reaction chamber is 5-120 minutes, the siloxane monomer is heated to 30-200° C. before entering the reaction chamber, and the polymerization is carried out at a temperature of 30-100° C. ## Claims ### Claim 1 A method comprising: forming a polysiloxane film on a substrate and an electrical component of the substrate, the polysiloxane film electro-chemically isolating the electrical component; wherein forming the polysiloxane film comprises: polymerizing a siloxane monomer in a reaction chamber containing the electrical component on the substrate; and wherein the polymerization is catalyzed by a 30-60 W radio frequency plasma and the pressure in the reaction chamber during the polymerization is 100-400 mTorr. ### Claim 2 (depends on 1) The method of claim 1, wherein the residence time of the siloxane monomer in the reaction chamber is 5-120 minutes. ### Claim 3 (depends on 1) The method of claim 1, wherein the residence time of the siloxane monomer in the reaction chamber is 5-60 minutes. ### Claim 4 (depends on 1) The method of claim 1, wherein the siloxane monomer is heated to 30-200° C. before entering the reaction chamber. ### Claim 5 (depends on 1) The method of claim 1, wherein the siloxane monomer is heated to 75-140° C. before entering the reaction chamber. ### Claim 6 (depends on 1) The method of claim 1, wherein the polymerization is carried out at a temperature of 30-100° C. ### Claim 7 (depends on 1) The method of claim 1, wherein the pressure in the reaction chamber during the polymerization is 175-350 mTorr. ### Claim 8 (depends on 1) The method of claim 1, wherein: the residence time of the siloxane monomer in the reaction chamber is 5-120 minutes; the siloxane monomer is heated to 30-200° C. before entering the reaction chamber; and the polymerization is carried out at a temperature of 30-100° C. ### Claim 9 (depends on 1) The method of claim 1, wherein: the pressure in the reaction chamber during the polymerization is 175-350 mTorr; the residence time of the siloxane monomer in the reaction chamber is 5-60 minutes; the siloxane monomer is heated to 75-140° C. before entering the reaction chamber; and the polymerization is carried out at a temperature of 30-100° C. ### Claim 10 (depends on 1) The method of claim 1, wherein the reaction chamber comprises an inert gas. ### Claim 11 (depends on 10) The method of claim 10, wherein the gas further comprises oxygen, wherein oxygen is present as at least one of oxygen (O2), ozone (O2), nitrous oxide (N2O), carbon dioxide (CO2), water (H2O), and mixtures thereof. ### Claim 12 (depends on 1) The method of claim 1, wherein the polymerizing comprises polymerizing a plurality of types of siloxane monomers. ### Claim 13 (depends on 1) The method of claim 1, wherein the siloxane monomer comprises fluorine. ### Claim 14 (depends on 1) The method of claim 1, wherein the polysiloxane film has a thickness of 0.3 to 1.5 microns. ### Claim 15 (depends on 1) The method of claim 1, wherein the polysiloxane film has a thickness of 0.5 to 1.1 microns. ### Claim 16 (depends on 1) The method of claim 1, wherein the polysiloxane film has a thickness of at most 1.1 microns. ### Claim 17 (depends on 1) The method of claim 1, further comprising swelling the polysiloxane film with a non-volatile diluent. ### Claim 18 (depends on 17) The method of claim 17, wherein the non-volatile diluent comprises an organic monomer or an organic oligomer.