# US 2017/0256933 A1 · Esd protection circuit and method with high immunity to hot plug insertion and other transient events > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0256933 A1 - Document ID: US20170256933A1 - Status: Published application - Kind: A1 - Application number: 15/062,350 - Filed: 2016-03-07 - Published: 2017-09-07 - Earliest claimed: 2016-03-07 - Assignees: Texas Instruments Incorporated - Applicants: Texas Instruments Incorporated - Inventors: Zhong Chen; Liang Wang - Web page: https://patentgrep.com/patent/US20170256933A1 ## CPC - H02H 9/046: {responsive to excess voltage appearing at terminals of integrated circuits} - H02H 3/22: of short duration, e.g. lightning - H02H 9/004: {in connection with live-insertion of plug-in units (involving communication with a central processing unit G06F13/40)} - H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H) ## Abstract Disclosed examples include an ESD protection circuit to protect an IC pad with high immunity against hot-plug surges, switching noise or other transient voltage conditions on the protected pad. The ESD protection circuit includes a clamp transistor and a trigger circuit responsive to rises in the protected pad voltage at or above a first slew rate to turn on the clamp transistor, as well as a second circuit coupled between the control terminal of the clamp transistor and a voltage supply node. The second circuit responds to rises in a voltage of the clamp transistor control terminal at a second, lower slew rate to reduce the voltage of the first control node to at least partially turn the clamp transistor off to reduce leakage current flow through the clamp transistor during transient voltage conditions on the protected pad. ## Claims ### Claim 1 An electrostatic discharge (ESD) protection circuit, comprising: a first transistor, including a first drain terminal coupled with a protected pad, a first source terminal coupled with a voltage supply node, and a first control terminal coupled to a first control node; a trigger circuit configured to turn on the first transistor to conduct a current from the protected pad to the voltage supply node in response to a first voltage rise in the protected pad at or above a first slew rate; and a second circuit coupled between the first control node and the voltage supply node, the second circuit configured to reduce the voltage of the first control node in response to a second voltage rise of the first control node at a second slew rate below the first slew rate, the reduced voltage of the first control node partially reducing the current flow through the first transistor. ### Claim 2 (depends on 1) The ESD protection circuit of claim 1, wherein the second circuit includes: a low pass filter circuit to provide a rising filter output signal at a first filter node responsive to the rises in the voltage of the first control node, the low pass filter circuit including a first filter resistor connected between the first control node and the first filter node, and a first filter capacitor connected between the first filter node and the voltage supply node; and a second transistor, including a second drain terminal coupled with the first control node, a second source terminal coupled with the voltage supply node, and a second control terminal coupled with the first filter node to provide the rising filter output signal for turning on the second transistor. ### Claim 3 (depends on 2) The ESD protection circuit of claim 2, wherein the second circuit includes an RC circuit including a second resistor and a second capacitor to control a pull down strength of the second circuit, the second resistor connected between the first control node and the second drain terminal of the second transistor, and the second capacitor coupled between the first control node and the voltage supply node. ### Claim 4 (depends on 2) The ESD protection circuit of claim 2, wherein a filter time constant associated with the first filter resistor and the first filter capacitor of the low pass filter circuit corresponds to the second slew rate. ### Claim 5 (depends on 2) The ESD protection circuit of claim 2, wherein a filter time constant associated with the first filter resistor and the first filter capacitor of the low pass filter circuit is 1 μs or more. ### Claim 6 (depends on 2) The ESD protection circuit of claim 2, wherein the trigger circuit includes a first capacitor and a first resistor to control a sensitivity of the trigger circuit, and wherein a trigger circuit time constant associated with the first capacitor and the first resistor corresponds to the first slew rate. ### Claim 7 (depends on 2) The ESD protection circuit of claim 2, wherein the trigger circuit includes a first capacitor and a first resistor to control a sensitivity of the trigger circuit, and wherein a trigger circuit time constant associated with the first capacitor and the first resistor is 100 ns or less. ### Claim 8 (depends on 7) The ESD protection circuit of claim 7, wherein the trigger circuit time constant associated with the first capacitor and the first resistor is 50 ns or less. ### Claim 9 (depends on 2) The ESD protection circuit of claim 2, wherein the trigger circuit includes: a first trigger circuit transistor connected between the protected pad and the first control node; a second trigger circuit transistor connected between the first control node and the voltage supply node; a first capacitor connected between the protected pad and a control terminal of the first trigger circuit transistor; a first resistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; a second resistor connected between the first control node and the voltage supply node; and a third trigger circuit transistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; wherein control terminals of the second and third trigger circuit transistors are connected to a second voltage supply node. ### Claim 10 (depends on 9) The ESD protection circuit of claim 9, wherein the trigger circuit includes a first capacitor and a first resistor to control a sensitivity of the trigger circuit, and wherein a trigger circuit time constant associated with the first capacitor and the first resistor corresponds to the first slew rate. ### Claim 11 (depends on 9) The ESD protection circuit of claim 9, wherein the trigger circuit includes a first capacitor and a first resistor to control a sensitivity of the trigger circuit, and wherein a trigger circuit time constant associated with the first capacitor and the first resistor is 100 ns or less. ### Claim 12 (depends on 11) The ESD protection circuit of claim 11, wherein the trigger circuit time constant associated with the first capacitor and the first resistor is 50 ns or less. ### Claim 13 (depends on 1) The ESD protection circuit of claim 1, wherein the trigger circuit includes: a first trigger circuit transistor connected between the protected pad and the first control node; a second trigger circuit transistor connected between the first control node and the voltage supply node; a first capacitor connected between the protected pad and a control terminal of the first trigger circuit transistor; a first resistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; a second resistor connected between the first control node and the voltage supply node; and a third trigger circuit transistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; wherein control terminals of the second and third trigger circuit transistors are connected to a second voltage supply node; and wherein a trigger circuit time constant associated with the first capacitor and the first resistor corresponds to the first slew rate. ### Claim 14 An integrated circuit (IC), comprising: a conductive pad to electrically connect an internal circuit of the IC with an external circuit; and a protection circuit to protect the internal circuit connected to the conductive pad, the protection circuit including: a first transistor, including a first drain terminal coupled with the conductive pad, a first source terminal coupled with a voltage supply node, and a first control terminal coupled to a first control node, a trigger circuit to turn on the first transistor to conduct a current from the conductive pad to the voltage supply node in response to a first voltage rise in the conductive pad at or above a first slew rate, and a second circuit coupled between the first control node and the voltage supply node, the second circuit configured to reduce the voltage of the first control node in response to a second voltage rise in the first control node at a second slew rate below the first slew rate, the reduced voltage of the first control node partially reducing the current flow through the first transistor. ### Claim 15 (depends on 14) The IC of claim 14, wherein the second circuit includes: a low pass filter circuit to provide a rising filter output signal at a first filter node responsive to the rises in the voltage of the first control node, the low pass filter circuit including a first filter resistor connected between the first control node and the first filter node, and a first filter capacitor connected between the first filter node and the voltage supply node; and a second transistor, including a second drain terminal coupled with the first control node, a second source terminal coupled with the voltage supply node, and a second control terminal coupled with the first filter node to provide the rising filter output signal for turning on the second transistor. ### Claim 16 (depends on 15) The IC of claim 15, wherein the second circuit includes an RC circuit including a second resistor and a second capacitor to control a pull down strength of the second circuit, the second resistor connected between the first control node and the second drain terminal of the second transistor, and the second capacitor coupled between the first control node and the voltage supply node. ### Claim 17 (depends on 14) The IC of claim 14, wherein the trigger circuit includes: a first trigger circuit transistor connected between the conductive pad and the first control node; a second trigger circuit transistor connected between the first control node and the voltage supply node; a first capacitor connected between the conductive pad and a control terminal of the first trigger circuit transistor; a first resistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; a second resistor connected between the first control node and the voltage supply node; and a third trigger circuit transistor connected between the control terminal of the first trigger circuit transistor and the voltage supply node; wherein control terminals of the second and third trigger circuit transistors are connected to a second voltage supply node. ### Claim 18 A circuit to mitigate leakage current in a clamp transistor of an ESD protection circuit during transient voltage conditions on a protected pad, comprising: a low pass filter circuit to provide a rising filter output signal at a first filter node responsive to a voltage rise in a first control terminal of the clamp transistor, the low pass filter circuit including: a filter resistor connected between the first control terminal and the first filter node, and a filter capacitor connected between the first filter node and a voltage supply node; and a transistor, including a drain terminal coupled with the first control terminal, a source terminal coupled with the voltage supply node, and a second control terminal coupled with the first filter node to provide the rising filter output signal for turning on the transistor. ### Claim 19 (depends on 18) The circuit of claim 18, further comprising an RC circuit including a second resistor and a second capacitor to control a pull down strength of the circuit, the second resistor connected between the first control terminal and the drain terminal of the transistor, and the second capacitor coupled between the first control terminal and the voltage supply node. ### Claim 20 (depends on 18) The circuit of claim 18, wherein a filter time constant associated with the filter resistor and the filter capacitor is 1 μs or more.