# US 2017/0256649 A1 · Semiconductor device

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- Number: US 2017/0256649 A1
- Document ID: US20170256649A1
- Status: Published application
- Kind: A1
- Application number: 15/529,044
- Filed: 2015-11-20
- Published: 2017-09-07
- Earliest claimed: 2014-11-28
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Sharp Kabushiki Kaisha
- Inventors: Yutaka TAKAMARU; Takao SAITOH; Yohsuke KANZAKI; Keisuke IDE; Seiji KENEKO
- Web page: https://patentgrep.com/patent/US20170256649A1

## CPC

- H10D 30/6728: {Vertical TFTs}
- G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/133302: {Rigid substrates, e.g. inorganic substrates}
- G02F 1/133305: {Flexible substrates, e.g. plastics, organic film}
- G02F 1/133514: {Colour filters}
- G02F 1/134336: {Matrix}
- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- G02F 2201/121: common or background
- G02F 2201/123: pixel
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A semiconductor device includes a first conductive film, an insulating film, a second conductive film, and a semiconductor film. The insulating film is formed above the first conductive film such that the first conductive film includes an exposed portion that is exposed. The second conductive film is formed above the insulating film such that sides of the second conductive film are close to the exposed portion of the first conductive film. The semiconductor film includes a channel region for electrically connecting the second conductive film to the first conductive film via the channel region. The semiconductor film is formed above the second conductive film and across the exposed portion of the first conductive film from at least one side to another.

## Claims

### Claim 1

A semiconductor device comprising:
a first conductive film;
an insulating film formed above the first conductive film such that the first conductive film includes an exposed portion that is not covered with the insulating film;
a second conductive film formed above the insulating film such that sides of the second conductive film are close to the exposed portion of the first conductive film; and
a semiconductor film including a channel region for electrically connecting the second conductive film to the first conductive film via the channel region, the semiconductor film being formed above the second conductive film and across the exposed portion of the first conductive film from at least one side to another.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the first conductive film includes a main portion and two branch portions that branch off from the main portion and extend in a same direction, and
the two branch portions include sides opposed to each other and close to the exposed portion of the first conductive film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
the insulating film includes a hole through which the exposed portion of the first conductive film is exposed, and
the semiconductor film entirely covers the hole.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the semiconductor film is made of oxide semiconductor.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein
the semiconductor film includes a low resistance region having an electric resistance lower than the channel region, and
the low resistance region covers any one of a portion of the first conductive film and a portion of the second conductive film.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein the low resistance region is configured as a pixel electrode.

### Claim 7 (depends on 4)

The semiconductor device according to claim 4, wherein the oxide semiconductor contains indium (in), gallium (Ga), zinc (Zn), and oxygen (O).

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein the oxide semiconductor has a crystalline structure.