# US 2017/0256648 A1 · Semiconductor Device, Display Device Including The Semiconductor Device, Display Module Including The Display Device, And Electronic Appliance Including The Semiconductor Device, The Display Device, Or The Display Module

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- Number: US 2017/0256648 A1
- Document ID: US20170256648A1
- Status: Published application
- Kind: A1
- Application number: 15/597,297
- Filed: 2017-05-17
- Published: 2017-09-07
- Earliest claimed: 2014-02-28
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI; Junichi KOEZUKA; Masami JINTYOU; Daisuke KUROSAKI
- Web page: https://patentgrep.com/patent/US20170256648A1

## CPC

- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/80: characterised by the materials
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

## Claims

### Claim 1

A semiconductor device comprising:
an oxide semiconductor film over a first insulating film;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
a second insulating film including a first portion over the source electrode;
a third insulating film including a second portion over the drain electrode; and
a fourth insulating film including a third portion over the second insulating film, the third insulating film, and the oxide semiconductor film,
wherein a first amount of oxygen molecules released from the first portion and a second amount of oxygen molecules released from the second portion are each smaller than a third amount of oxygen molecules released from the third portion in thermal desorption spectroscopy.