# US 2017/0256647 A1 · Semiconductor device, method for manufacturing the same, or display device including the same

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- Number: US 2017/0256647 A1
- Document ID: US20170256647A1
- Status: Published application
- Kind: A1
- Application number: 15/447,203
- Filed: 2017-03-02
- Published: 2017-09-07
- Earliest claimed: 2016-03-04
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Yasutaka NAKAZAWA; Junichi KOEZUKA
- Web page: https://patentgrep.com/patent/US20170256647A1

## CPC

- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/6728: {Vertical TFTs}
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/405: {Orientations of crystalline planes}
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- G06F 3/041: Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A gate electrode, a first insulating film thereover, an oxide semiconductor film thereover, a source electrode and a drain electrode thereover, and a second insulating film thereover are included. The source and the drain electrodes each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film includes copper. The first and the third conductive films each include an oxide conductive film. An end portion of the first conductive film includes a region located outward from an end portion of the second conductive film. The third conductive film covers a top surface and a side surface of the second conductive film and includes a region in contact with the first conductive film.

## Claims

### Claim 1

A semiconductor device comprising:
a transistor including:
a first gate electrode;
a first insulating film over the first gate electrode;
an oxide semiconductor film over the first insulating film;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film; and
a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode,
wherein the source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film,
wherein the second conductive film includes copper,
wherein the first conductive film and the third conductive film each include an oxide conductive film,
wherein an end portion of the first conductive film is located outward from an end portion of the second conductive film, and
wherein the third conductive film covers a top surface and a side surface of the second conductive film and is in contact with the first conductive film.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising a fourth conductive film over and in contact with the second insulating film,
wherein the fourth conductive film includes an oxide conductive film,
wherein an opening portion is included in the second insulating film, and
wherein the fourth conductive film is electrically connected to the third conductive film through the opening portion.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the third conductive film includes a stacked-layer structure of a metal film and an oxide conductive film.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein the oxide semiconductor film includes In, M, and Zn, and
wherein the M is Al, Ga, Y, or Sn.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the oxide semiconductor film includes a crystal part, and
wherein the crystal part has c-axis alignment.

### Claim 6 (depends on 1)

A display device comprising the semiconductor device according to claim 1,
wherein the display device comprises a display element.

### Claim 7 (depends on 6)

A display module comprising the display device according to claim 6,
wherein the display module comprises a touch sensor.

### Claim 8 (depends on 1)

An electronic device comprising the semiconductor device according to claim 1,
wherein the electronic device comprises at least one of an operation key and a battery.