# US 2017/0256579 A1 · Semiconductor device having a light receiving element

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- Number: US 2017/0256579 A1
- Document ID: US20170256579A1
- Status: Published application
- Kind: A1
- Application number: 15/446,229
- Filed: 2017-03-01
- Published: 2017-09-07
- Earliest claimed: 2016-03-03
- Assignees: Sii Semiconductor Corporation
- Applicants: SII Semiconductor Corporation
- Inventors: Takeshi KOYAMA
- Web page: https://patentgrep.com/patent/US20170256579A1

## CPC

- H10F 39/8057: {Optical shielding}
- H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.

## Claims

### Claim 1

A semiconductor device comprising a light receiving element,
the light receiving element comprising a plurality of photodiodes each having a PN junction formed between a first conductivity type semiconductor substrate and a second conductivity type layer region formed on an upper surface of the first conductivity type semiconductor substrate,
the semiconductor device comprising:
an SOI layer formed between a photodiode and an adjacent photodiode among the plurality of photodiodes and above the first conductivity type semiconductor substrate via a buried oxide film, and fowled of single crystal silicon; and
an oxide film formed on the plurality of photodiodes and the SOI layer.

### Claim 2 (depends on 1)

A semiconductor device comprising a light receiving element according to claim 1, wherein the SOI layer has a thickness thicker than a reaching depth of light to be shielded.

### Claim 3 (depends on 1)

A semiconductor device comprising a light receiving element according to claim 1, wherein the SOI layer and the plurality of photodiodes overlap with each other in planar view.

### Claim 4 (depends on 1)

A semiconductor device comprising a light receiving element according to claim 1, wherein the oxide film comprises the buried oxide film and an insulating oxide film formed on the buried oxide film.

### Claim 5 (depends on 1)

A semiconductor device comprising a light receiving element according to claim 1, wherein the oxide film comprises an insulating oxide film.