# US 2017/0256569 A1 · Semiconductor device and display device and manufacturing method thereof

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- Number: US 2017/0256569 A1
- Document ID: US20170256569A1
- Status: Published application
- Kind: A1
- Application number: 15/340,320
- Filed: 2016-11-01
- Published: 2017-09-07
- Earliest claimed: 2016-03-07
- Assignees: Japan Display Inc.
- Applicants: Japan Display Inc.
- Inventors: Hiroki OHARA
- Web page: https://patentgrep.com/patent/US20170256569A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/021: {of multiple TFTs}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/431: {having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a semiconductor device including a first transistor having an oxide semiconductor film, an interlayer film over the first transistor, and second transistor located over the interlayer film and having a semiconductor film including silicon. The interlayer film can include an inorganic insulator. The semiconductor film including silicon can contain polycrystalline silicon. The interlayer film can include an inorganic insulator.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
a first transistor over the substrate, the first transistor including an oxide semiconductor film;
an interlayer film over the first transistor; and
a second transistor over the interlayer film, the second transistor comprising a semiconductor film including silicon.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein:
the first transistor comprises:
the oxide semiconductor film;
a first gate insulating film over the oxide semiconductor film; and
a first gate over the first gate insulating film;
the interlayer film includes an inorganic insulator; and
the second transistor comprises:
the semiconductor film;
a second gate insulating film over the semiconductor film; and
a second gate over the second gate insulating film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the semiconductor film comprises polycrystalline silicon.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein the interlayer film comprises:
a first layer including silicon oxide;
a second layer over the first layer, the second layer including silicon nitride; and
a third layer over the second layer, the third layer including silicon oxide.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a metal film under the first transistor, the metal film being located between the substrate and the oxide semiconductor film.

### Claim 6 (depends on 2)

The semiconductor device according to claim 2,
wherein the second gate includes aluminum.

### Claim 7

A display device comprising:
a substrate;
a display region over the substrate, the display region comprising a pixel including a display element; and
a driver circuit over the substrate, the driver circuit being configured to control the display element,
wherein the pixel comprises:
a first transistor including an oxide semiconductor film and electrically connected to the display element;
an interlayer film over the first transistor; and
a second transistor over the interlayer film, the second transistor being electrically connected to the first transistor and including a semiconductor film including silicon.

### Claim 8 (depends on 7)

The display device according to claim 7,
wherein:
the first transistor comprises:
the oxide semiconductor film;
a first gate insulating film over the oxide semiconductor film; and
a first gate over the first gate insulating film;
the interlayer film includes an inorganic insulator; and
the second transistor comprises:
the semiconductor film;
a second gate insulating film over the semiconductor film; and
a second gate over the second gate insulating film.

### Claim 9 (depends on 7)

The display device according to claim 7,
wherein the driver circuit is located outside the display region and comprises a third transistor including an oxide semiconductor film.

### Claim 10 (depends on 7)

The display device according to claim 7,
wherein the interlayer film comprises:
a first layer including silicon oxide;
a second layer over the first layer, the second layer including silicon nitride; and
a third layer over the second layer, the third layer including silicon oxide.

### Claim 11 (depends on 7)

The display device according to claim 7,
wherein the pixel comprises a metal film between the oxide semiconductor film and the substrate.

### Claim 12 (depends on 7)

The display device according to claim 7,
wherein:
the pixel comprises:
a driving transistor in which one of source-drain electrodes is connected to an electrode of the display element; and
a switching transistor in which one of source-drain electrodes is connected to a gate electrode of the driving transistor;
the first transistor is the driving transistor; and
the second transistor is the switching transistor.

### Claim 13 (depends on 8)

The display device according to claim 8,
wherein the second gate includes aluminum.

### Claim 14

A method for manufacturing a semiconductor device, the method comprising:
forming a first transistor including an oxide semiconductor film over a substrate;
forming an interlayer film over the first transistor; and
forming a second transistor over the interlayer film, the second transistor being electrically connected to the first transistor and comprising a semiconductor film including silicon.

### Claim 15 (depends on 14)

The method according to claim 14,
wherein:
the first transistor comprises:
the oxide semiconductor film;
a first gate insulating film over the oxide semiconductor film; and
a first gate over the first gate insulating film;
the interlayer film includes an inorganic insulator; and
the second transistor comprises:
the semiconductor film;
a second gate insulating film over the semiconductor film; and
a second gate over the second gate insulating film.

### Claim 16 (depends on 14)

The method according to claim 14,
wherein the semiconductor film comprises polycrystalline silicon.

### Claim 17 (depends on 14)

The method according to claim 14,
wherein the interlayer film comprises:
a first layer including silicon oxide;
a second layer over the first layer, the second layer including silicon nitride; and
a third layer over the second layer, the third layer including silicon oxide.

### Claim 18 (depends on 14)

The method according to claim 14, further comprising:
forming a metal film under the first transistor.

### Claim 19 (depends on 14)

The method according to claim 14, further comprising:
heating the oxide semiconductor film at a temperature from 250° C. to 500° C.

### Claim 20 (depends on 15)

The method according to claim 15, including:
simultaneously performing laser irradiation on the oxide semiconductor film and the semiconductor film.