# US 2017/0256407 A1 · Method for producing nitride semiconductor stacked body and nitride semiconductor stacked body > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0256407 A1 - Document ID: US20170256407A1 - Status: Published application - Kind: A1 - Application number: 15/507,663 - Filed: 2015-08-28 - Published: 2017-09-07 - Earliest claimed: 2014-09-09 - Assignees: Sharp Kabushiki Kaisha - Applicants: Sharp Kabushiki Kaisha - Inventors: Masayuki TAJIRI; Nobuyuki ITO; Atsushi OGAWA; Yohsuke FUJISHIGE; Mai OKAZAKI; Manabu TOHSAKI - Web page: https://patentgrep.com/patent/US20170256407A1 ## CPC - H10P 14/3822: {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing} - C23C 16/301: {AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi} - C23C 16/303: {Nitrides} - H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT} - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs} - H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 62/854: further characterised by the dopants - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/3216: {Nitrides} - H10P 14/3251: {consisting of three or more layers} - H10P 14/3416: {Nitrides} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method for producing a nitride semiconductor stacked body includes: a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace; a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer; and a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on the upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than the band gap of the second nitride semiconductor layer. No interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step. ## Claims ### Claim 1 A method for producing a nitride semiconductor stacked body, the method comprising: a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace; a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer; and a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on an upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than a band gap of the second nitride semiconductor layer, wherein no interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step, wherein the second nitride semiconductor layer forming step includes a fourth nitride semiconductor layer forming step of forming a fourth nitride semiconductor layer and a fifth nitride semiconductor layer foil ling step of forming a fifth nitride semiconductor layer above the fourth nitride semiconductor layer, wherein a temperature of the substrate in the fifth nitride semiconductor layer forming step is higher than the temperature of the substrate in the fourth nitride semiconductor layer forming step, and wherein a pressure inside the furnace in the fifth nitride semiconductor layer forming step is lower than the pressure inside the furnace in the fourth nitride semiconductor layer forming step. ### Claim 2 (canceled) ### Claim 3 (depends on 1) The method for producing a nitride semiconductor stacked body according to claim 1, wherein the second nitride semiconductor layer forming step further includes a sixth nitride semiconductor layer forming step of forming a sixth nitride semiconductor layer between the fourth nitride semiconductor layer and the fifth nitride semiconductor layer, wherein the temperature of the substrate in the sixth nitride semiconductor layer forming step gradually changes from the temperature of the substrate in the fourth nitride semiconductor layer forming step to the temperature of the substrate in the fifth nitride semiconductor layer forming step, and wherein the pressure inside the furnace in the sixth nitride semiconductor layer forming step gradually changes from the pressure inside the furnace in the fourth nitride semiconductor layer forming step to the pressure inside the furnace in the fifth nitride semiconductor layer forming step. ### Claim 4 (depends on 1) The method for producing a nitride semiconductor stacked body according to claim 1, wherein the second nitride semiconductor layer is made of GaN, and the third nitride semiconductor layer is made of AlxGa1-xN (0