# US 2017/0256397 A1 · Substrate processing apparatus, substrate processing method, and storage medium

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2017/0256397 A1
- Document ID: US20170256397A1
- Status: Published application
- Kind: A1
- Application number: 15/440,060
- Filed: 2017-02-23
- Published: 2017-09-07
- Earliest claimed: 2016-03-02
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Gentaro Goshi; Keisuke Egashira
- Web page: https://patentgrep.com/patent/US20170256397A1

## CPC

- H10P 70/80: {Cleaning only by supercritical fluids}
- B08B 7/0021: {by liquid gases or supercritical fluids}
- H10P 70/20: {Cleaning during device manufacture}
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like}
- H10P 72/0408: {for drying}
- H10P 72/0434: {mainly by convection}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL

## Abstract

Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a dry processing unit that performs a dry processing to dry a substrate; and
a controller that controls an operation of the dry processing unit,
wherein the dry processing unit includes:
a chamber that accommodates the substrate;
a supercritical processing liquid supply unit that includes a reservoir that stores a supercritical processing liquid containing hydrofluoroolefin, and supplies the supercritical processing liquid to the substrate;
a heating unit that heats an inside of the chamber; and
a discharge unit that discharges a fluid in the chamber from the chamber, and
wherein the controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate by the supercritical processing liquid supply unit before or after the substrate is accommodated in the chamber, the inside of the chamber is heated by the heating unit in a state where the substrate is accommodated in the chamber to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and then, the supercritical fluid or the subcritical fluid is discharged from the chamber by the discharge unit.

### Claim 2 (depends on 1)

The substrate processing apparatus of claim 1, wherein the hydrofluoroolefin is hydrochlorofluoroolefin.

### Claim 3 (depends on 1)

The substrate processing apparatus of claim 1, wherein the dry processing unit further includes a recycling unit that regenerates a liquid from the fluid discharged by the discharge unit and supplies the regenerated liquid to the reservoir.

### Claim 4 (depends on 3)

The substrate processing apparatus of claim 3, wherein the dry processing unit further includes a concentration adjusting unit that adjusts a concentration of the supercritical processing liquid stored in the reservoir, and
the controller controls the recycling unit and the concentration adjusting unit such that the liquid regenerated by the recycling unit is supplied to the reservoir, and then, the concentration of the supercritical processing liquid stored in the reservoir is adjusted to a predetermined concentration.

### Claim 5 (depends on 1)

The substrate processing apparatus of claim 1, wherein the dry processing unit further includes a substrate holding unit moving between an external position of the chamber and an internal position of the chamber in a state of holding the substrate, and
the controller controls the supercritical processing liquid supply unit and the substrate holding unit such that the supercritical processing liquid is supplied to the substrate held by the substrate holding unit when the substrate holding unit is positioned at the external position or the internal position.

### Claim 6 (depends on 5)

The substrate processing apparatus of claim 5, wherein the controller controls the supercritical processing liquid supply unit and the substrate holding unit such that the supercritical processing liquid is supplied to the substrate held by the substrate holding unit when the substrate holding unit is positioned at the external position, and
the dry processing unit further includes a recycling unit that regenerates a gas evaporated from the supercritical processing liquid supplied to the substrate held by the substrate holding unit when the substrate holding unit is positioned at the external position and a liquid from the fluid discharged by the discharge unit, and supplies the regenerated liquid to the reservoir.

### Claim 7 (depends on 6)

The substrate processing apparatus of claim 6, wherein the dry processing unit further includes a concentration adjusting unit that adjusts a concentration of the supercritical processing liquid stored in the reservoir, and
the controller controls the recycling unit and the concentration adjusting unit such that the liquid regenerated by the recycling unit is supplied to the reservoir, and then, the concentration of the supercritical processing liquid stored in the reservoir is adjusted to a predetermined concentration.

### Claim 8 (depends on 1)

The substrate processing apparatus of claim 1, wherein the supercritical processing liquid contains an organic solvent having a boiling point higher than that of the hydrofluoroolefin.

### Claim 9 (depends on 8)

The substrate processing apparatus of claim 8, wherein a dry preventing liquid for preventing drying of the substrate is filled on the surface of the substrate before the supercritical processing liquid is supplied to the surface of the substrate,
the dry preventing liquid contains an organic solvent, and
the organic solvent contained in the dry preventing liquid and the organic solvent contained in the supercritical processing liquid are the same in kind.

### Claim 10 (depends on 1)

The substrate processing apparatus of claim 1, wherein the dry processing unit further includes a cooling unit that cools the supercritical processing liquid stored in the reservoir.

### Claim 11

A substrate processing method for drying a substrate in a chamber, comprising:
supplying a supercritical processing liquid that contains hydrofluoroolefin and is stored in a reservoir to the substrate unit, before or after the substrate is accommodated in the chamber;
heating an inside of the chamber in a state where the substrate is accommodated in the chamber to change the supercritical processing liquid supplied to the substrate into a supercritical fluid or a subcritical fluid; and
discharging the supercritical fluid or the subcritical fluid from the chamber.

### Claim 12 (depends on 11)

The substrate processing method of claim 11, wherein the hydrofluoroolefin is hydrochlorofluoroolefin.

### Claim 13 (depends on 11)

The substrate processing method of claim 11, further comprising:
regenerating a liquid discharged from the discharging the supercritical fluid to supply the regenerated liquid to the reservoir.

### Claim 14 (depends on 13)

The substrate processing method of claim 13, further comprising:
adjusting a concentration of the supercritical processing liquid stored in the reservoir to a predetermined concentration after the regenerated liquid is supplied to the reservoir.

### Claim 15 (depends on 11)

The substrate processing method of claim 11, wherein in the supplying the supercritical liquid, the supercritical processing liquid stored in the reservoir is supplied to the substrate unit before the substrate is accommodated in the chamber, and the method further comprises:
regenerating a gas evaporated from the supercritical processing liquid supplied to the substrate in the supplying the supercritical processing liquid and a liquid from the fluid discharged in the discharging the supercritical fluid or the subcritical fluid to supply the regenerated liquids to the reservoir.

### Claim 16 (depends on 15)

The substrate processing method of claim 15, further comprising:
adjusting a concentration of the supercritical processing liquid stored in the reservoir to a predetermined concentration after the regenerated liquids are supplied to the reservoir.

### Claim 17 (depends on 11)

The substrate processing method of claim 11, wherein the supercritical processing liquid contains an organic solvent having a boiling point higher than that of the hydrofluoroolefin.

### Claim 18 (depends on 17)

The substrate processing method of claim 17, wherein a dry preventing liquid for prevent drying of the substrate is filled on the surface of the substrate before the supercritical processing liquid is supplied to the surface of the substrate,
the dry preventing liquid contains an organic solvent, and
the organic solvent contained in the dry preventing liquid and the organic solvent contained in the supercritical processing liquid are the same in kind.

### Claim 19 (depends on 11)

The substrate processing method of claim 11, further comprising:
cooling the supercritical processing liquid stored in the reservoir.

### Claim 20 (depends on 11)

A non-transitory computer-readable storage medium that stores a program for controlling a substrate processing apparatus which, when executed, cause a computer to control the substrate liquid processing apparatus and execute the substrate liquid processing method of claim 11.

### Claim 21

A substrate processing apparatus comprising:
a dry processing unit that performs a dry processing to dry a substrate; and
a controller that controls operations of the dry processing unit,
wherein the dry processing unit includes:
a chamber that accommodates the substrate;
a dialkyl ether supply unit that supplies a liquid dialkyl ether represented by R1—O—R2 (wherein R1 and R2 represent the same or different alkyl groups) to the substrate;
a heating unit that heats an inside of the chamber; and
a discharge unit that discharges a fluid in the chamber from the chamber, and
wherein the controller controls the dialkyl ether supply unit, the heating unit, and the discharge unit such that the liquid dialkyl ether is supplied to the substrate by the dialkyl ether supply unit before or after the substrate is accommodated in the chamber, the inside of the chamber is heated by the heating unit in a state where the substrate is accommodated in the chamber to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and then, the supercritical fluid or the subcritical fluid is discharged from the chamber by the discharge unit.

### Claim 22 (depends on 21)

The substrate processing apparatus of claim 21, wherein the liquid dialkyl ether is methyl tert-butyl ether.

### Claim 23 (depends on 21)

The substrate processing apparatus of claim 21, wherein a dry preventing liquid for prevent drying of the substrate is filled on the surface of the substrate before the liquid dialkyl ether is supplied is supplied to the surface of the substrate.

### Claim 24 (depends on 23)

The substrate processing apparatus of claim 23, wherein the dry preventing liquid contains isopropyl alcohol.

### Claim 25 (depends on 23)

The substrate processing apparatus of claim 23, wherein the dry preventing liquid contains propylene glycol monomethyl ether acetate.

### Claim 26 (depends on 21)

The substrate processing apparatus of claim 21, wherein the dry processing unit further includes a substrate holding unit moving between an external position of the chamber and an internal position of the chamber in a state of holding the substrate, and
the dialkyl ether supply unit supplies the liquid dialkyl ether to the substrate held by the substrate holding unit when the substrate holding unit is positioned at the external position or the internal position.

### Claim 27

A substrate processing method for drying a substrate in a chamber, comprising:
supplying a liquid dialkyl ether represented by R1—O—R2 (wherein R1 and R2 represent the same or different alkyl groups) to the substrate unit before or after the substrate is accommodated in the chamber;
heating an inside of the chamber in a state where the substrate is accommodated in the chamber to change the liquid diethyl ether supplied to the substrate into a supercritical fluid or a subcritical fluid; and
discharging the supercritical fluid or the subcritical fluid from the chamber.

### Claim 28 (depends on 27)

The substrate processing method of claim 27, wherein the liquid dialkyl ether is methyl tert-butyl ether.

### Claim 29 (depends on 27)

The substrate processing method of claim 27, wherein a dry preventing liquid is filled on the surface of the substrate before the liquid dialkyl ether is supplied.

### Claim 30 (depends on 29)

The substrate processing method of claim 29, wherein the dry preventing liquid contains isopropyl alcohol.

### Claim 31 (depends on 29)

The substrate processing method of claim 29, wherein the dry preventing liquid contains propylene glycol monomethyl ether acetate.

### Claim 32 (depends on 27)

The substrate processing method of claim 27, wherein the supplying the liquid dialkyl ether includes:
holding the substrate in a substrate holding unit that moves between an external position of the chamber and an internal position of the chamber, and
supplying the liquid dialkyl ether to the substrate held by the substrate holding unit when the substrate holding unit is positioned at the external position or the internal position.

### Claim 33 (depends on 27)

A non-transitory computer-readable storage medium that stores a program for controlling a substrate processing apparatus which, when executed, cause a computer to control the substrate liquid processing apparatus and execute the substrate liquid processing method of claim 27.
