# US 2017/0256384 A1 · Plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0256384 A1 - Document ID: US20170256384A1 - Status: Published application - Kind: A1 - Application number: 15/446,052 - Filed: 2017-03-01 - Published: 2017-09-07 - Earliest claimed: 2016-03-01 - Assignees: SPTS Technologies Limited - Applicants: Spts Technologies Limited - Inventors: PAUL BENNETT - Web page: https://patentgrep.com/patent/US20170256384A1 ## CPC - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - B08B 7/0035: {by radiant energy, e.g. UV, laser, light beam or the like} - B08B 9/08: Cleaning containers, e.g. tanks - C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases} - C23C 16/448: characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials - C23C 16/503: using DC or AC discharges - C23C 16/505: using radio frequency discharges - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/3211: {Antennas, e.g. particular shapes of coils} - H01J 37/32541: {Shape} - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J 2237/334: Etching - H01J 2237/335: Cleaning - H10P 72/0421: {for drying etching} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A plasma processing apparatus for plasma processing a substrate comprising includes a chamber having one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source, and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber. ## Claims ### Claim 1 A plasma processing apparatus for plasma processing a substrate comprising: a chamber comprising one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source ; and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber. ### Claim 2 (depends on 1) Apparatus according to claim 1 in which the electrode structure is a single turn structure. ### Claim 3 (depends on 2) Apparatus according to claim 2 in which the electrode structure is a single non-continuous band forming a single turn around a periphery of the chamber. ### Claim 4 (depends on 2) Apparatus according to claim 2 in which the electrode structure comprises a plurality of spaced apart band segments forming a single turn around a periphery of the chamber. ### Claim 5 (depends on 4) Apparatus according to claim 4 in which the band segments are spaced apart by portions of a chamber wall formed from a dielectric material. ### Claim 6 (depends on 4) Apparatus according to claim 4 in which the band segments are connected in parallel to the electrical signal supply device. ### Claim 7 (depends on 4) Apparatus according to claim 4 in which the band segments are grounded at their midpoints. ### Claim 8 (depends on 1) Apparatus according to claim 1 in which a lower region of the electrode structure proximal to the substrate support comprises one or more discontinuities which prevent the formation of a primary current flow path in said lower region. ### Claim 9 (depends on 8) Apparatus according to claim 8 in which the discontinuities are slots formed in the electrode structure. ### Claim 10 (depends on 1) Apparatus according to claim 1 in which the electrode structure comprises a plurality of spaced apart band segments forming a single turn around a periphery of the chamber, and the lower region of each band segment in the electrode structure comprises a discontinuity which prevents the formation of a primary current flow pattern in said lower region. ### Claim 11 (depends on 1) Apparatus according to claim 1 in which the metallic material is a metal. ### Claim 12 (depends on 1) Apparatus according to claim 1 in which the electrode structure is in direct communication with the interior of the chamber. ### Claim 13 (depends on 12) Apparatus according to claim 12 in which the electrode structure extends through at least one chamber wall from an outer surface to an inner surface thereof. ### Claim 14 (depends on 1) Apparatus according to claim 1 further comprising a substrate support positioned within the chamber. ### Claim 15 (depends on 1) Apparatus according to claim 1 comprising a first chamber having the electrode structure which acts as a plasma source and one or more further chambers in which plasma processing takes place. ### Claim 16 (depends on 1) Apparatus according to claim 1 in which the electrical signal supply device supplies a RF electrical signal that drives the electrode structure. ### Claim 17 (depends on 1) A method of plasma processing a substrate comprising the steps of: providing an apparatus according to claim 1; and supplying an electrical signal to the electrode structure to drive the electrode structure as a primary winding of an inductively coupled plasma source thereby sustaining an inductively coupled plasma within the chamber which is used to perform the plasma processing. ### Claim 18 (depends on 17) A method according to claim 17 in which the plasma processing is performed to process a substrate which is positioned in the apparatus. ### Claim 19 (depends on 18) A method according to claim 18 in which the substrate is a semiconductor substrate or a flat panel. ### Claim 20 (depends on 17) A method according to claim 17 in which the plasma processing is a chamber cleaning process. ### Claim 21 (depends on 17) A method according claim 17 in which the apparatus comprises a first chamber having the electrode structure which acts as a plasma source, and one or more further chambers in which the plasma processing takes place. ### Claim 22 (depends on 21) A method according to claim 21 in which the first chamber is a source of radicals which are used for the plasma processing.