Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same

A resist composition for ArF exposure comprising:

• (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
• (B) a compound generating the acid upon irradiation with one of an actinic ray and a radiation;
• (C) a resin containing a repeating unit represented by the following formula (Cc), an amount of the resin (C) being 1 to 10% by mass based on the total solid components in the resist composition;
• and
• (D) a solvent,
• wherein
• Xc represents a hydrogen atom, a methyl group or an alkyl group having 5 or more carbon atoms;
• Rf1 and Rf2 each represents a hydrogen atom or an alkyl group and at least one of Rf1 and Rf2 represents a fluorine-substituted alkyl group;
• Qc represents a single bond or a (nc+1)-valent linking group;
• and
• nc represents a positive integer.