# US 2017/0253993 A1 · Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

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- Number: US 2017/0253993 A1
- Document ID: US20170253993A1
- Status: Published application
- Kind: A1
- Application number: 15/198,893
- Filed: 2016-06-30
- Published: 2017-09-07
- Earliest claimed: 2016-03-03
- Assignees: Zing Semiconductor Corporation
- Applicants: Zing Semiconductor Corporation
- Inventors: DEYUAN XIAO; RICHARD R. CHANG
- Web page: https://patentgrep.com/patent/US20170253993A1

## CPC

- C30B 29/06: Silicon
- C30B 15/002: {Continuous growth}
- C30B 15/04: adding doping materials, e.g. for n-p-junction
- C30B 15/203: {the relationship of pull rate (v) to axial thermal gradient (G)}
- C30B 15/305: {Stirring of the melt}
- C30B 30/04: using magnetic fields
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

## Claims

### Claim 1

A method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, using the silicon-containing materials comprising silicon pieces and polysilicon bulks, wherein the silicon pieces have surface growth of silicon nitride and are doped with deuterium;
introducing a gas containing argon during formation of the melt; and
applying a magnetic field during the pulling step.

### Claim 2 (depends on 1)

The method of claim 1, wherein the silicon nitride is grown by low pressure chemical vapor deposition or plasma chemical vapor deposition.

### Claim 3 (depends on 2)

The method of claim 2, wherein the silicon nitride has a thickness of 20-5000 nm.

### Claim 4 (depends on 1)

The method of claim 1, wherein the silicon pieces are doped with deuterium by ion implantation after growth of silicon nitride.

### Claim 5 (depends on 4)

The method of claim 4, wherein ion implantation has an implantation energy of 1 keV to 800 keV and an implantation dose of 1×1012 to 1×1018 ions/cm2.

### Claim 6 (depends on 1)

The method of claim 1, which comprises the following steps:
melting the silicon-containing materials comprising silicon pieces and polysilicon bulks in the crucible under a predetermined temperature, wherein the silicon pieces have surface growth of silicon nitride and are doped with deuterium;
applying a magnetic field; pulling a crystal rod upward by a predetermined pulling rate from a crystal seed until reaching a predetermined length of the crystal rod;
reducing the pulling rate and maintaining a linear cooling rate to form a monocrystalline silicon ingot with a predetermined diameter; and
while the monocrystalline silicon ingot has the predetermined diameter, increasing the pulling rate, simultaneously cooling and terminating the linear cooling to stabilize the diameter of the monocrystalline silicon ingot, and continuously growing the monocrystalline silicon ingot.

### Claim 7 (depends on 1)

The method of claim 1, wherein the magnetic field has an intensity of 1000 to 5000 Gauss.

### Claim 8 (depends on 1)

A method for producing a wafer comprising applying a monocrystalline silicon ingot prepared by the method of claim 1, which is characterized by that, the wafer comprises 1×1013 to 1×1016 nitrogen atoms/cm3.

### Claim 9 (depends on 1)

The method of claim 1, wherein the wafer comprises 1×1012 to 1×1018 deuterium atoms/cm3.

### Claim 10 (depends on 9)

The method of claim 9, wherein the monocrystalline silicon ingot is treated with cutting, surface grinding, polishing, edge finishing and washing to form the wafer.