Double Gate Transistor Device and Method of Operating

A method comprising:

• switching off a transistor device by interrupting a first conducting channel by driving a first gate electrode;
• and
• after interrupting the first conducting channel, interrupting a second conducting channel by driving a second gate electrode,
• wherein the second gate electrode is arranged adjacent the first gate electrode in a current flow direction of the transistor device.

A transistor device comprising at least one transistor cell, wherein the at least one transistor cell comprises:

• a drift region, a body region, a source region and a drain region, wherein the body region is arranged between the source region and the drift region, and wherein the drift region is arranged between body region and the drain region;
• a first gate electrode dielectrically insulated from the body region by a first gate dielectric;
• and
• a second gate electrode,
• wherein the second gate electrode is dielectrically insulated from the body region by a second gate dielectric, arranged adjacent the first gate electrode, and separated from the first gate electrode by a separation layer.

A transistor device, comprising:

• a semiconductor body with a first semiconductor layer comprising a first type of group III nitride and a second semiconductor layer adjoining the first semiconductor layer and comprising a second type group III nitride;
• a source electrode connected to the first semiconductor layer and the second semiconductor layer;
• a drain electrode spaced apart from the source electrode and connected to the first semiconductor layer and the second semiconductor layer;
• and
• a first gate electrode and a second gate electrode that are spaced apart in a current flow direction of the transistor device.